FDP045N10A_F102

FDP045N10A / FDI045N10A MOSFET – N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW www.onsemi.com Description This N−Channel MOSFET is produced using ON Semiconductor’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. D Features • • • • • • RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A Fast Switching Speed Low Gate Charge, QG = 54 nC (Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability This Device is Pb−Free and is RoHS Compliant G S Applications • • • • Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter TO−220 CASE 221A−09 I2PAK CASE 418AV MARKING DIAGRAM $Y&Z&3&K FDP 045N10A $Y &Z &3 &K FDP/FDI045N10A $Y&Z&3&K FDI 045N10A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 June, 2019 − Rev. 3 1 Publication Order Number: FDP045N10A/D FDP045N10A / FDI045N10A MOSFET MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted) Symbol Parameter FDP045N10A_F102 FDI045N10A_F102 Unit VDSS Drain to Source Voltage 100 V VGSS Gate to Source Voltage ±20 V − Continuous (TC = 25°C, Silicon Limited) 164* A − Continuous (TC = 100°C, Silicon LImited) 116 − Continuous (TC = 25°C, Package Limited) 120 − Pulsed (Note 1) 656 A 637 mJ ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (TC = 25°C) 263 W − Derate Above 25°C 1.75 W/°C −55 to +175 °C 300 °C PD Operating and Storage Temperature Range TJ, TSTG Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A. THERMAL CHARACTERISTICS Symbol Parameter FDP045N10A_F102 FDI045N10A_F102 Unit °C RθJC Thermal Resistance, Junction to Case, Max. 0.57 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDP045N10A_F102 FDP045N10A TO−220 Tube N/A N/A 50 Units FDI045N10A I2−PAK Tube N/A N/A 50 Units FDI045N10A_F102 ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 − − V OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C − 0.07 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V − − 1 mA VDS = 80 V, TC = 150°C − − 500 VGS = ±20 V, VDS = 0 V − − ±100 nA 2.0 − 4.0 V BVDSS IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 100 A − 3.8 4.5 mW Forward Transconductance VDS = 10 V, ID = 100 A − 132 − S gFS www.onsemi.com 2 FDP045N10A / FDI045N10A ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted) (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit − 3960 5270 pF − 925 1230 pF − 34 − pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 50 V, VGS = 0 V f = 1 MHz Coss(er) Engry Releted Output Capacitance VDS = 50 V, VGS = 0 V − 1520 − pF Qg(tot) Total Gate Charge at 10V VGS = 10 V, VDS = 50 V, ID = 100 A (Note 4) − 54 74 nC − 17 − nC Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau − 8 − nC Qgd Gate to Drain “Miller” Charge − 13 − nC ESR Equivalent Series Resistance (G−S) f = 1 MHz − 1.9 − W VDD = 50 V, ID = 100 A, VGS = 10 V, RG = 4.7 W (Note 4) − 23 56 ns − 26 62 ns − 50 110 ns − 15 40 ns Maximum Continuous Drain to Source Diode Forward Current − − 164* A ISM Maximum Pulsed Drain to Source Diode Forward Current − − 656 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 100 A − − 1.3 V trr Reverse Recovery Time − 75 − ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 50 V, ISD = 100 A, dIF/dt = 100 A/ms − 120 − nC SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time tr Turn−On Rise Time td(off) Turn−Off Delay Time tf Turn−Off Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. L = 3 mH, IAS = 20.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt v 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FDP045N10A / FDI045N10A TYPICAL PERFORMANCE CHARACTERISTICS 500 VGS = 15.0 V 10.0 V 8.0 V 6.5 V 6.0 V 5.5 V 5.0 V 100 ID, Drain Current [A] ID, Drain Current [A] 500 100 1 10 −55°C 1 2 1 VDS, Drain−Source Voltage [V] 3 4 5 6 Figure 2. Transfer Characteristics 4.5 500 IS, Reverse Drain Current [A] RDS(ON) [mW], Drain−Source On−Resistance 2 VGS, Gate−Source Voltage [V] Figure 1. On−Region Characteristics VGS = 10 V 4.0 VGS = 20 V 3.5 3.0 25°C 175°C *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 10 0.1 *Notes: 1. VDS = 10 V 2. 250 ms Pulse Test 100 *Note: TC = 25°C 0 100 200 300 175°C 25°C 10 1 0.0 400 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 0.3 0.6 0.9 1.2 1.5 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 10000 VGS, Gate−Source Voltage [V] Capacitances [pF] Ciss 1000 Coss Crss Note: 1. VGS = 0 V 2. f = 1 MHz 100 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 6 4 2 0 100 VDS, Drain−Source Voltage [V] VDS = 20 V VDS = 50 V VDS = 80 V 8 *Note: ID = 100 A 0 10 20 30 40 50 Qg, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 60 FDP045N10A / FDI045N10A TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2.5 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.10 1.05 1.00 0.95 0.90 −100 *Notes: 1. VGS = 0 V 2. ID = 250 mA −50 0 50 100 150 1.5 1.0 0.5 0.0 −100 200 −50 0 50 100 150 200 TJ, Junction Temperature (°C) Figure 7. Maximum Safe Operating Area Figure 8. On−Resistance Variation vs. Temperature 175 150 100 ms 125 10 1 ms Operation in This Area is Limited by RDS(on) 1 VGS = 10 V 30 ms ID, Drain Current (A) 100 10ms *Notes: 1. TC = 25°C 2. TJ = 175°C 3. Single Pulse 0.1 0.1 1 DC 100 75 50 25 10 RqJC = 0.57°C/W 0 25 100200 50 75 100 125 150 175 VDS, Drain−Source Voltage [V] TC, Case Temperature (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 5 50 IAS, Avalanche Current [A] 4 EOSS, [mJ] *Notes: 1. VGS = 10 V 2. ID = 100 A TJ, Junction Temperature (°C) 1000 ID, Drain Current [A] 2.0 3 2 1 0 0 25 50 75 If R = 0 tAV = (L)(IAS)/(1.3×RATED BVDSS−VDD) If R = 0 tAV = (L/R)In[(IAS×R)/(1.3×RATED BVDSS−VDD)+1] Starting TJ = 150°C 1 0.01 100 Starting TJ = 25°C 10 0.1 1 10 100 1000 VDS, Drain to Source Voltage [V] tAV, Time In Avalanche [ms] Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive Switching Capability www.onsemi.com 5 FDP045N10A / FDI045N10A TYPICAL PERFORMANCE CHARACTERISTICS (continued) ZqJC(t), Thermal Response [°C/W] 1 0.5 0.1 0.2 0.1 P DM 0.05 t1 0.02 0.01 0.01 Single pulse 0.001 −5 10 t2 Notes: 1. ZqJC(t) = 0.57°C/W Max. 2. Duty Factor, D= t1/t2 3. TJM − TC = PDM × ZqJC(t) −4 10 −3 −2 10 10 −1 10 t, Rectangular Pulse Duration [sec] Figure 13. Transient Thermal Response Curve Figure 14. Gate Charge Test Circuit & Waveform www.onsemi.com 6 1 FDP045N10A / FDI045N10A VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr td(off) t on Figure 15. Resistive Switching Test Circuit & Waveforms Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 t off tf FDP045N10A / FDI045N10A DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD Sdv/dtcontrolled by RG SI SD controlled by pulse period D = −−−−−−−−−−−−−−−−−−−−−−−−−− 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recoverydv/dt VDD VSD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS I2PAK (TO−262 3 LD) CASE 418AV ISSUE A DATE 30 AUG 2022 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXXX XXXXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13814G I2PAK (TO−262 3 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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