FDPF18N20FT

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP18N20F / FDPF18N20FT N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 mΩ Features Description • RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G D S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP18N20F FDPF18N20FT 200 Unit V ±30 - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) V 18 18* 10.8 10.8* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt 72* (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Derate Above 25oC A 324 (Note 3) (TC = 25oC) PD TL 72 A mJ 4.5 V/ns 100 41 W 0.83 0.33 W/oC -55 to +150 oC 300 oC *Drain current limited by maximum junction temperature. Thermal Characteristics FDP18N20F FDPF18N20FT RθJC Symbol Thermal Resistance, Junction to Case, Max. Parameter 1.2 3.0 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 1 Unit o C/W www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET November 2013 Part Number Top Mark FDP18N20F FDP18N20F Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF18N20FT FDPF18N20FT TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 200 - - V - 0.2 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 200 V, VGS = 0 V - - 10 VDS = 160 V, TC = 125oC - - 100 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 9 A - 0.12 0.14 Ω gFS Forward Transconductance VDS = 20 V, ID = 9 A - 13.6 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 885 1180 pF - 200 270 pF - 24 35 pF - 20 26 nC - 5 - nC - 9 - nC - 16 40 ns - 50 110 ns - 50 110 ns - 40 90 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 100 V, ID = 18 A, VGS = 10 V, RG = 25 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18 A - - 1.5 V trr Reverse Recovery Time 80 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18 A, dIF/dt = 100 A/μs - 240 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 2 mH, IAS = 18 A, VDD = 50 V, RG = 2 5Ω, starting TJ = 25°C. 3. ISD ≤ 18 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 2 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 50 o 10 150 C o 25 C *Notes: 1. 250μs Pulse Test 1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 1 VDS,Drain-Source Voltage[V] 1 10 4 5 6 VGS,Gate-Source Voltage[V] 0.25 100 IS, Reverse Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 VGS = 10V VGS = 20V 0.15 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.10 *Note: TJ = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.0 50 Figure 5. Capacitance Characteristics 0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V] 2.0 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 *Note: 1. VGS = 0V 2. f = 1MHz Ciss 1000 Coss 500 VDS = 40V VDS = 100V VDS = 160V 8 6 4 2 Crss 0 0.1 2. 250μs Pulse Test Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 2000 Capacitances [pF] 7 1 10 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 0 30 3 *Note: ID = 18A 0 6 12 18 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8-1. Maximum Safe Operating Area - FDP18N20F 100 20μs 100μs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 10 1ms 1 *Notes: o 0.1 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 -50 0 50 100 o 150 TJ, Junction Temperature [ C] 10ms DC *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 Operation in This Area is Limited by R DS(on) 200 Figure 8-2. Maximum Safe Operating Area - FDPF18N20FT 1 10 100 VDS, Drain-Source Voltage [V] 600 Figure 9. Maximum Drain Current vs. Case Temperature 100 20 10μs 16 ID, Drain Current [A] ID, Drain Current [A] 100μs 10 1ms Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: 8 4 o 0.1 12 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 0 25 600 10 100 VDS, Drain-Source Voltage [V] 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10-1. Transient Thermal Response Curve - FDP18N20F ZθJC (t), Thermal Response [oC/W] Thermal Response [ZθJC ] 2 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 *Notes: t2 o 0.01 1. ZθJC(t) = 1.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -5 10 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] t , Rectangular Pulse Duration [sec] 1 10 2 10 1 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 4 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics (Continued) FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT ZθJC (t), Thermal Response [o]C/W] Thermal Response [ZθJC 2 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 t1 0.01 *Notes: t2 o 0.01 1. ZθJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -5 10 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular [sec] t , RectangularPulse PulseDuration Duration [sec] 1 10 2 10 1 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 5 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET IG = const. Figure 11. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 12. Resistive Switching Test Circuit & Waveforms VGS Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 6 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 7 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions Figure 15. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 8 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. C1 10 www.fairchildsemi.com FDP18N20F / FDPF18N20FT — N-Channel UniFETTM FRFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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