FDR8305N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
These N-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
•
•
Low gate charge (16.2nC typical).
Applications
•
Fast switching speed.
•
•
•
•
High performance trench technology for extremely
low RDS(ON).
•
Small footprint (38% smaller than a standard SO-8);low
profile package (1 mm thick); power handling capability
similar to SO-8.
Load switch
Motor driving
Power Management
D2
4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V
RDS(ON) = 0.028 Ω @ VGS = 2.5 V.
D2
D1
D1
S2
TM
SuperSOT -8
G1
S1
4
6
3
7
2
8
1
G2
Absolute Maximum Ratings
Symbol
5
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
V
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
(Note 1a)
4.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
0.8
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
- Continuous
- Pulsed
20
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
156
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.8305
FDR8305N
13’’
12mm
3000 units
1999 Fairchild Semiconductor Corporation
FDR8305N Rev. C
FDR8305N
November 1999
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to
25°C
VDS = 16 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 8 V, VDS = 0 V
100
nA
VGS = -8 V, VDS = 0 V
-100
nA
IGSSR
On Characteristics
20
V
14
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to
25°C
RDS(on)
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VGS = 4.5 V, ID = 4.5 A
VGS=4.5 V, ID=4.5 A, TJ=125°C
VGS = 2.5 V, ID = 4 A
VGS = 4.5 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 4.5 V, ID = 4.5 A
24
S
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
1600
pF
0.4
0.85
1.5
-3
0.015
0.026
0.020
V
mV/°C
0.022
0.040
0.028
10
Ω
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
380
pF
200
pF
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
12
VDS = 10 V, ID = 4.5 A,
VGS = 4.5 V
22
ns
15
27
ns
35
55
ns
18
30
ns
16.2
23
nC
2.5
nC
5.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A
(Note
0.65
0.67
A
1.2
V
2)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally.
O
156 C/W on a minimum mounting pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR8305N Rev. C
FDR8305N
Electrical Characteristics
FDR8305N
Typical Characteristics
1.8
VGS = 4.5V
ID, DRAIN CURRENT (A)
3.0V
16
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
2.0V
2.5V
12
8
1.5V
4
1.6
VGS = 2.0V
1.4
2.5V
1.2
3.0V
3.5V
0
0.4
0.8
1.2
1.6
0
2
4
8
12
16
20
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.6
0.06
ID = 4.5A
VGS = 4.5V
ID = 2.3A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
0
1.4
1.2
1
0.8
0.6
0.05
0.04
o
TA = 125 C
0.03
0.02
o
TA = 25 C
0.01
0
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
20
o
TA = -55 C
IS, REVERSE DRAIN CURRENT (A)
16
VGS = 0V
o
25 C
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
1
125oC
12
8
4
10
1
o
TA = 125 C
o
25 C
0.1
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR8305N Rev. C
(continued)
5
2500
ID = 4.5A
f = 1MHz
VGS = 0 V
VDS = 5V
10V
4
2000
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
FDR8305N
Typical Characteristics
15V
3
2
1
CISS
1500
1000
500
COSS
CRSS
0
0
4
8
12
16
0
20
0
4
Qg, GATE CHARGE (nC)
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
10
o
POWER (W)
1
1s
10s
DC
VGS= 4.5 V
SINGLE PULSE
o
RθJA=156 C/W
0.1
RθJA=156 C/W
40
10ms
100ms
o
TA=25 C
30
20
10
o
TA=25 C
0
0.01
0.1
1
10
100
0.0001
0.001
VDS, DRAIN-SOURCE VOLTAGE (V)
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
1
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
SINGLE PULSE
100µs
1ms
RDS(ON)
LIMIT
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
R θJA (t) = r(t) * R θJA
R θJA = 156 °C/W
0.2
0.1
0.05
P(pk)
0.02
t1
0.01
Single Pulse
0.002
0.001
0.0001
0.001
t2
TJ - TA = P * R JA (t)
θ
Duty Cycle, D = t 1/ t 2
0.01
0.1
1
10
100
300
t1 , TIME (sec)
FDR8305N Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D