FDS4435BZ-F085

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Other names and brands may be claimed as the property of others. P-Channel PowerTrench® MOSFET General Description -30V, -8.8A, 20m: This Features P-Channel ON using „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A MOSFET is produced Semiconductor’s advanced PowerTrench® process that has been „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A especially tailored to minimize the on-state „ Extended VGSS range (-25V) for battery applications resistance. This device is well suited for Power „ HBM ESD protection level of ±3.8KV typical (note 3) Management and load switching applications „ High performance trench technology for extremely low rDS(on) common in Notebook Computers and Portable „ High power and current handling capability Battery Packs. „ Termination is Lead-free and RoHS compliant Qualified to AEC Q101 D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D G S S Pin 1 S SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TA = 25°C (Note 1a) -Pulsed PD Ratings -30 Units V ±25 V -8.8 -50 Power Dissipation TA = 25°C (Note 1a) 2.5 Power Dissipation TA = 25°C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 4) A W 24 mJ -55 to +150 °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 25 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ-F085 ©2009 Semiconductor Components Industries, LLC. September-2017,Rev.1 Package SO-8 Reel Size 13’’ Tape Width 12mm Quantity 2500units Publication Order Number: FDS4435BZ-F085/D FDS4435BZ-F085 P-Channel PowerTrench® MOSFET FDS4435BZ-F085 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -30 V ID = -250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 PA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 PA -3 V mV/°C -21 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1385 1845 pF 275 365 pF 230 345 pF : 4.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6: VDD = -15V, ID = -8.8A 10 20 ns 6 12 ns 30 48 ns 12 22 ns 28 40 nC 16 23 nC 5.2 nC 7.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -8.8A (Note 2) IF = -8.8A, di/dt = 100A/Ps -0.9 -1.2 V 29 44 ns 23 35 nC NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V www.onsemi.com 2 FDS4435BZ-F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 50 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V VGS = -5V VGS = -4.5V 30 VGS = -4V 20 VGS = -3.5V 10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 1 2 3 3.0 VGS = -4.5V 2.5 VGS = -4V 1.5 VGS = -10V 1.0 0.5 0 4 10 20 30 40 50 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 60 ID = -8.8A VGS = -10V 1.2 1.0 0.8 0.6 -75 -50 -25 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX ID = -8.8A rDS(on), DRAIN TO 1.4 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -5V 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 40 TJ = 125oC 30 20 TJ = 25oC 10 100 125 150 2 o TJ, JUNCTION TEMPERATURE ( C) 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 100 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = -3.5V 3.5 40 VDS = -5V 30 20 TJ = 150oC 10 TJ = 25oC TJ =-55oC 0 1 2 3 4 5 VGS = 0V 10 1 0.1 TJ = 25oC TJ = 150oC 0.01 TJ = -55oC 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDS4435BZ-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 ID = -8.8A Ciss 8 CAPACITANCE (pF) VDD = -10V 6 VDD = -15V VDD = -20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 100 0.1 30 1 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -4 10 -Ig, GATE LEAKAGE CURRENT(A) -IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC VDS = 0V -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 10 -9 1 0.01 0.1 1 10 10 30 0 5 10 15 20 25 30 -VGS, GATE TO SOURCE VOLTAGE(V) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 10 8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -10V 6 VGS = -4.5V 4 2 100us 10 1ms 10ms 1 THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED o RTJA = 125 C/W o 50 10s DC TA = 25oC RTJA = 50 C/W 0 25 1s 75 100 125 150 0.01 0.1 o TA, AMBIENT TEMPERATURE ( C) 1 10 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 80 FDS4435BZ-F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 VGS = -10 V SINGLE PULSE o RTJA = 125 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 -2 10 -1 10 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDS4435BZ-085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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