FDS4435BZ

FDS4435BZ MOSFET – P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW Description www.onsemi.com This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A Extended VGSS Range (−25 V) for Battery Applications HBM ESD Protection Level of ±3.8 kV Typical (Note 3) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability This Device is Pb−Free and RoHS Compliant Specifications D Pin 1 Features • • • • • • • D S SS G SOIC8 CASE 751EB ELECTRICAL CONNECTION D 5 4 G D 6 3 S D 7 2 S D 8 1 S MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage −30 V VGS Gate to Source Voltage ±25 V ID Drain Current − Continuous TA = 25°C (Note 1a) − Pulsed −8.8 −50 PD Power Dissipation TA = 25°C (Note 1a) 2.5 Power Dissipation TA = 25°C (Note 1b) 1.0 Single Pulse Avalanche Energy (Note 4) 24 mJ −55 to +150 °C EAS TJ, TSTG Operating and Storage Junction Temperature Range A FDS4435BZ A L YW Symbol Parameter Ratings Unit RqJC Thermal Resistance, Junction to Case 25 °C/W RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50 1 = Specific Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week ORDERING INFORMATION Device FDS4435BZ THERMAL CHARACTERISTICS August, 2019 − Rev. 4 FDS4435BZ ALYW W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2009 MARKING DIAGRAM Package Shipping† SOIC8 (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: FDS4435BZ/D FDS4435BZ Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V 1 mA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 mA −3 V BVDSS −30 V −21 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = −250 mA, referenced to 25°C 6 Static Drain to Source On Resistance VGS = −10 V, ID = −8.8 A 16 20 VGS = −4.5 V, ID = −6.7 A 26 35 VGS = −10 V, ID = −8.8 A, TJ = 125°C 22 28 VDS = −5 V, ID = −8.8 A 24 RDS(on) gFS Forward Transconductance −1 −2.1 mV/°C mW S DYNAMIC CHARACTERISTICS VDS = −15 V, VGS = 0 V, f = 1MHz Ciss Input Capacitance 1385 1845 pF Coss Output Capacitance 275 365 pF Crss Reverse Transfer Capacitance 230 345 pF Rg Gate Resistance W f = 1MHz 4.5 VDD = −15 V, ID = −8.8 A, VGS = −10 V, RGEN = 6 W 10 20 ns 6 12 ns 30 48 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time Turn−Off Delay Time 12 22 ns Qg Fall Time Total Gate Charge VGS = 0 V to −10 V, VDD = −15 V, ID = −8.8 A 28 40 nC Qg Total Gate Charge VGS = 0 V to −5 V, VDD = −15 V, ID = −8.8 A 16 23 nC Qgs Gate to Source Charge VDD = −15 V, ID = −8.8 A 5.2 nC Qgd Gate to Drain “Miller” Charge 7.4 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = −8.8A (Note 2) trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = −8.8 A, di/dt = 100 A/ms −0.9 −1.2 V 29 44 ns 23 35 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 1 mH, IAS = −7 A, VDD = −30 V, VGS = −10 V. www.onsemi.com 2 FDS4435BZ TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 4.0 VGS = −10V VGS = −5V 40 NORMALIZED DRAIN TO SOURCE ON−RESISTANCE −I D, DRAIN CURRENT (A) 50 VGS = −4.5V 30 VGS = −4V 20 VGS = −3.5V 10 0 PULSE DURATION = 80m s DUTY CYCLE = 0.5%MAX 0 1 2 3 3.0 VGS = −4.5V 2.5 VGS = −4V 2.0 VGS = −10V 1.0 0.5 4 0 10 20 SOURCE ON−RESISTANCE (mW ) R DS(on) , DRAIN TO NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID = −8.8A 1.0 0.8 0 25 50 50 TJ = 125oC 30 20 TJ = 25oC 10 75 100 125 150 PULSE DURATION = 80 m s DUTY CYCLE = 0.5%MAX 40 2 4 6 10 8 −VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (5C) Figure 3. Normalized On−Resistance vs Junction Temperature Figure 4. On−Resistance vs Gate to Source Voltage 100 50 PULSE DURATION = 80m s DUTY CYCLE = 0.5%MAX 40 −I S , REVERSE DRAIN CURRENT (A) − ID, DRAIN CURRENT (A) 50 60 1.2 VDS = −5V 30 20 TJ = 150oC 10 0 40 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage ID = −8.8A VGS = −10V 0.6 −75 −50 −25 30 −ID , DRAIN CURRENT(A) Figure 1. On−Region Characteristics 1.4 VGS = −5V 1.5 −V DS, DRAIN TO SOURCE VOLTAGE (V) 1.6 PULSE DURATION = 80m s DUTY CYCLE = 0.5%MAX VGS = −3.5V 3.5 TJ = 25oC 1 2 TJ =−55o C 3 4 VGS = 0V 10 1 0.1 0.01 TJ = −55 oC 0.001 0.0001 0.0 5 TJ = 25oC TJ = 150oC 0.2 0.4 0.6 0.8 1.0 1.2 −VSD , BODY DIODE FORWARD VOLTAGE (V) −VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 FDS4435BZ TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) 4000 ID = −8.8A Ciss 8 VDD = −10V CAPACITANCE (pF) −VGS , GATE TO SOURCE VOLTAGE(V) 10 6 VDD = −15V VDD = −20V 4 2 0 0 5 10 15 20 25 1000 Coss Crss 100 0.1 30 Figure 7. Gate Charge Characteristics −4 10 −I g, GATE LEAKAGE CURRENT(A) 10 TJ = 25oC TJ = 125oC VDS = 0V −5 10 TJ = 125oC −6 10 −7 10 TJ = 25oC −8 10 −9 1 0.01 0.1 1 10 10 30 0 tAV, TIME IN AVALANCHE(ms) 5 10 15 20 25 30 −V GS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 10 100 −I D, DRAIN CURRENT (A) 8 VGS = −10V 6 VGS = −4.5V 4 2 100us 10 1ms 10ms 1 THIS AREA IS LIMITED BY RDS(on) 0.1 RqJA = 50 C/W 25 50 75 100 125 150 SINGLE PULSE TJ = MAX RATED RqJA = 125 C/W 0.01 0.1 TA, AMBIENT TEMPERATURE (5C) 100ms o o 0 30 10 Figure 8. Capacitance vs Drain to Source Voltage 20 −IAS, AVALANCHE CURRENT(A) 1 −VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) −I D, DRAIN CURRENT (A) f = 1 MHz VGS = 0V TA 1 =25 oC 10 1s 10s DC 80 −VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 FDS4435BZ TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C unless otherwise noted) P(PK) , PEAK TRANSIENT POWER (W) 1000 VGS = −10 V SINGLE PULSE o R qJA = 125 C/W o TA = 25 C 100 10 1 0.5 −4 10 −3 10 −2 −1 10 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, Z q JA 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1 / t 2 PEAK T J = PDM x Z qJAx R qJA + TA o RqJA = 125 C/W 0.001 −4 10 −3 10 −2 10 −1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction To Ambient Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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