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P-Channel PowerTrench® MOSFET
General Description
-30V, -8.8A, 20m:
This
Features
P-Channel
ON
using
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
MOSFET
is
produced
Semiconductor’s advanced
PowerTrench® process that has been
Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
especially tailored to minimize the on-state
Extended VGSS range (-25V) for battery applications
resistance. This device is well suited for Power
HBM ESD protection level of ±3.8KV typical (note 3)
Management and load switching applications
High performance trench technology for extremely low rDS(on)
common in Notebook Computers and Portable
High power and current handling capability
Battery Packs.
Termination is Lead-free and RoHS compliant
Qualified to AEC Q101
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
G
S
S
Pin 1
S
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
Ratings
-30
Units
V
±25
V
-8.8
-50
Power Dissipation
TA = 25°C
(Note 1a)
2.5
Power Dissipation
TA = 25°C
(Note 1b)
1.0
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 4)
A
W
24
mJ
-55 to +150
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS4435BZ
Device
FDS4435BZ-F085
©2009 Semiconductor Components Industries, LLC.
September-2017,Rev.1
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
Publication Order Number:
FDS4435BZ-F085/D
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
FDS4435BZ-F085
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
-30
V
ID = -250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
PA
-3
V
mV/°C
-21
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250PA, referenced to 25°C
6
VGS = -10V, ID = -8.8A
16
20
rDS(on)
Static Drain to Source On Resistance
VGS = -4.5V, ID = -6.7A
26
35
VGS = -10V, ID = -8.8A, TJ = 125°C
22
28
VDS = -5V, ID = -8.8A
24
gFS
Forward Transconductance
-1
-2.1
mV/°C
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz
1385
1845
pF
275
365
pF
230
345
pF
:
4.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6:
VDD = -15V,
ID = -8.8A
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -8.8A
(Note 2)
IF = -8.8A, di/dt = 100A/Ps
-0.9
-1.2
V
29
44
ns
23
35
nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
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2
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
50
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
VGS = -5V
VGS = -4.5V
30
VGS = -4V
20
VGS = -3.5V
10
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
3.0
VGS = -4.5V
2.5
VGS = -4V
1.5
VGS = -10V
1.0
0.5
0
4
10
20
30
40
50
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
60
ID = -8.8A
VGS = -10V
1.2
1.0
0.8
0.6
-75
-50
-25
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
ID = -8.8A
rDS(on), DRAIN TO
1.4
0
25
50
75
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -5V
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
50
40
TJ = 125oC
30
20
TJ = 25oC
10
100 125 150
2
o
TJ, JUNCTION TEMPERATURE ( C)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
100
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
3.5
40
VDS = -5V
30
20
TJ = 150oC
10
TJ = 25oC
TJ =-55oC
0
1
2
3
4
5
VGS = 0V
10
1
0.1
TJ = 25oC
TJ = 150oC
0.01
TJ = -55oC
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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3
1.2
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
4000
ID = -8.8A
Ciss
8
CAPACITANCE (pF)
VDD = -10V
6
VDD = -15V
VDD = -20V
4
2
1000
Coss
Crss
f = 1MHz
VGS = 0V
0
0
5
10
15
20
25
100
0.1
30
1
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
-4
10
-Ig, GATE LEAKAGE CURRENT(A)
-IAS, AVALANCHE CURRENT(A)
20
10
TJ = 25oC
TJ = 125oC
VDS = 0V
-5
10
TJ = 125oC
-6
10
-7
10
TJ = 25oC
-8
10
-9
1
0.01
0.1
1
10
10
30
0
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
100
10
8
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
30
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10V
6
VGS = -4.5V
4
2
100us
10
1ms
10ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
o
RTJA = 125 C/W
o
50
10s
DC
TA = 25oC
RTJA = 50 C/W
0
25
1s
75
100
125
150
0.01
0.1
o
TA, AMBIENT TEMPERATURE ( C)
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 12. Forward Bias Safe
Operating Area
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4
80
FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
1000
VGS = -10 V
SINGLE PULSE
o
RTJA = 125 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
-2
10
-1
10
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
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5
100
1000
FDS4435BZ-085 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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