FDS6679AZ

-30V, -13A, 9mΩ Features General Description „ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A This P-Channel MOSFET is producted using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. „ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. „ High performance trench technology for extremely low rDS(on) „ High power and current handing capability „ RoHS Compliant D D D D SO-8 S S S G 5 4 6 3 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) Units V ±25 V -13 -Pulsed A -65 Power Dissipation for Single Operation PD TJ, TSTG Ratings -30 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1.0 Operating and Storage Temperature W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking FDS6679AZ Device FDS6679AZ ©2009 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Reel Size 13’’ 1 Tape Width 12mm Quantity 2500 units Publication Order Number: FDS6679AZ/D FDS6679AZ P-Channel PowerTrench® MOSFET FDS6679AZ P-Channel PowerTrench® MOSFET Symbol Parameter Test Conditions Min -30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS=0V ±10 µA -3 V -20 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C rDS(on) gFS Drain to Source On Resistance Forward Transconductance -1 -1.9 6.5 mV/°C VGS = -10V, ID = -13A 7.7 9.3 VGS = -4.5V, ID = -11A 11.8 14.8 VGS = -10V, ID = -13A, TJ = 125°C 10.7 13.4 VDS = -5V, ID = -13A mΩ 55 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 2890 3845 pF 500 665 pF 495 745 pF 13 24 ns 15 27 ns 210 336 ns 92 148 ns 68 96 nC 38 54 nC Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = -15V, ID = -1A VGS = -10V, RGS = 6Ω VDS = -15V, VGS = -10V, ID = -13A VDS = -15V, VGS = -5V, ID = -13A 10 nC 17 nC Drain-Source Diode Characteristic VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -1.2 V trr Reverse Recovery Time IF = -13A, di/dt = 100A/µs -0.7 40 ns Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/µs -31 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper b)105°C/W when mounted on a .04 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width