FDS8949_F085

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Other names and brands may be claimed as the property of others. 40V, 6A, 29mΩ Features General Description „ Max rDS(on) = 29mΩ at VGS = 10V These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. „ Max rDS(on) = 36mΩ at VGS = 4.5V „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Qualified to AEC Q101 Applications „ RoHS compliant „ Inverter „ Power suppliers D2 D2 D1 D1 G2 SO-8 Pin 1 S1 G1 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed EAS Drain-Source Avalanche Energy (Note 3) ±20 V 6 A 26 mJ 2 Power Dissipation for Single Operation TJ, TSTG Units V 20 Power Dissipation for Dual Operation PD Ratings 40 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 1.6 W 0.9 °C -55 to 150 Thermal Characteristics RθJA Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 81 RθJA Thermal Resistance-Single operation, Junction to Ambient (Note 1b) 135 RθJC Thermal Resistance, Junction to Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking FDS8949 Device FDS8949-F085 ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Reel Size 13’’ 1 Tape Width 12mm Quantity 2500 units Publication Order Number: FDS8949-F085/D FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current 40 ID = 250µA, referenced to 25°C V mV/°C 33 1 µA 10 µA ±100 nA 3 V VDS = 32V, VGS = 0V TJ = 55°C VGS = ±20V,VDS = 0V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 6A 21 rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 4.5A 26 36 VGS = 10V, ID = 6A,TJ = 125°C 29 43 VDS = 10V,ID = 6A 22 gFS Forward Transconductance 1 1.9 -4.6 mV/°C 29 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 715 955 pF 105 140 pF 60 90 pF Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 20V, ID = 1A VGS = 10V, RGEN = 6Ω VDS = 20V, ID = 6A,VGS = 5V 9 18 5 10 ns ns 23 37 ns 3 6 ns 7.7 11 nC 2.4 nC 2.8 nC Drain-Source Diode Characteristics and Maximum Ratings VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2) 0.8 1.2 V trr Reverse Recovery Time (note 3) 17 26 ns Qrr Reverse Recovery Charge 7 11 nC IF = 6A, diF/dt = 100A/µs Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 81°C/W when mounted on a 1in2 pad of 2 oz copper b) 135°C/W when mounted on a minimum pad . Scale 1:1 on letter size paper 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 3: Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V. www.onsemi.com 2 FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 20 ID, DRAIN CURRENT (A) 16 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 10V VGS = 3.5V VGS = 4.5V 12 VGS = 3.0V 8 4 PULSE DURATION = 300µs DUTY CYCLE = 20%MAX 0 0.0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 300µs DUTY CYCLE = 20%MAX 2.5 VGS = 3.0V 2.0 VGS = 3.5V 1.5 VGS = 4.5V 1.0 0.5 VGS = 10V 0 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 70 1.6 ID = 6A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) VDD = 10V 12 TJ = 125oC 8 TJ = 25oC TJ = -55oC 4 0 1.5 50 40 TJ = 125oC 30 20 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 100 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4.0 IS, REVERSE DRAIN CURRENT (A) 16 PULSE DURATION = 300µs DUTY CYCLE = 20%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 PULSE DURATION = 300µs DUTY CYCLE = 20%MAX ID = 3.5A 60 10 150 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 4 8 12 ID, DRAIN CURRENT(A) VGS = 0V 10 1 TJ = 125oC TJ = 25oC 0.1 0.01 1E-3 0.2 TJ = -55oC 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3 10 VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V Ciss VDD = 30V VDD = 20V 6 CAPACITANCE (pF) 8 4 2 0 0 4 8 12 Qg, GATE CHARGE(nC) Crss 10 16 f = 1MHz VGS = 0V 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 8. Capacitance vs Drain to Source Voltage 10 7 1 ID, DRAIN CURRENT (A) 6 TJ = 25oC TJ = 125oC 0.1 -3 10 -2 10 -1 0 1 2 VGS = 10V 4 3 VGS = 4.5V 2 1 o RθJA = 81 C/W 0 25 3 10 10 10 10 tAV, TIME IN AVALANCHE(ms) 10 50 75 100 125 150 TA, Ambient TEMPERATURE (oC) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 100 100 10 100us 1 10ms 1ms LIMITED BY PACKAGE 0.1 5 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.01 0.1 100ms 1s SINGLE PULSE TJ = MAX RATED 10s DC TA = 25oC 1 10 100 300 P(PK), PEAK TRANSIENT POWER (W) IAS, AVALANCHE CURRENT(A) 10 1 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) Coss 2 VGS = 10V SINGLE PULSE 1 0.7 -4 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area SINGLE PULSE RθJA = 135°C/W TA = 25°C 10 -3 10 -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 3 10 FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 P(PK) t1 t2 0.01 RθJA(t) = r(t)*RθJA RθJA = 135oC/W SINGLE PULSE 1E-3 -3 10 TJ-TA =P*RθJA DUTY FACTOR: D = t1/t2 -2 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve www.onsemi.com 5 2 10 3 10 FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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