FDS9412

FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 36 mΩ @ VGS = 4.5 V • Very low gate charge. • High switching speed These devices are particularly suited for low voltage applications such as notebook computer DC-DC converter where fast switching, low conduction loss and high efficiency are needed. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package. D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 7.9 A – Continuous (Note 1a) – Pulsed 24 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 -55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9412 FDS9412 13’’ 12mm 2500 units 2000 Fairchild Semiconductor Corporation FDS9412 Rev D(W) FDS9412 April 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA 2.0 V On Characteristics 30 V 28 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 10 V, VGS = 10 V, VGS = 4.5 V, VGS = 10 V, gFS Forward Transconductance VDS = 10 V, 1 ID = 7.9 A ID = 7.9 A, TJ=125°C ID = 6.2 A VDS = 5 V ID = 7.9 A 1.6 -4.3 19 30 25 mV/°C 22 35 36 16 mΩ A 22 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, V GS = 0 V, f = 1.0 MHz 830 pF 185 pF 80 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 6 12 ns 10 20 ns Turn–Off Delay Time 18 32 ns Turn–Off Fall Time 5 10 ns 14 22 nC VDS = 12 V, ID = 7.9 A, VGS = 10 V 2.7 nC 3.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2 A Voltage (Note 2) 0.7 2 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1in pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9412 Rev D(W) FDS9412 Electrical Characteristics FDS9412 Typical Characteristics 30 25 2.5 4.0V VGS = 10V VGS = 3.0V 3.5V 6.0V 2 5.0V 20 3.5V 4.5V 15 3.0V 1.5 4.0V 4.5V 10 5.0V 6.0V 10V 1 5 2.5V 0 0.5 0 0.5 1 1.5 2 2.5 0 5 10 VDS, DRAIN-SOURCE VOLTAGE (V) 15 20 25 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.8 ID = 7.9 A ID = 7.9A VGS = 10V 1.6 0.08 1.4 0.06 1.2 o 1 TA = 125 C 0.04 0.8 o TA = 25 C 0.02 0.6 0.4 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 o TA = -55 C VDS = 5V VGS = 0V o 25 C 10 25 o TA = 125 C o 125 C 20 1 15 0.1 10 0.01 5 0.001 o 25 o -55 C 0.0001 0 0.5 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9412 Rev D(W) FDS9412 Typical Characteristics 10 1500 ID = 8.4A f = 1MHz VGS = 0 V VDS = 5V 10V 8 1200 15V CISS 6 900 4 600 2 300 0 0 COSS CRSS 0 3 6 9 12 15 0 5 Qg, GATE CHARGE (nC) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 RDS(ON) LIMIT 100µs SINGLE PULSE 1ms 10 10ms 100ms 1s 10s DC 1 o RθJA = 125 C/W 40 o TA = 25 C 30 0.1 20 VGS = 10V SINGLE PULSE 0.01 10 o RθJA = 125 C/W o TA = 25 C 0.001 0 0.1 1 10 100 0.001 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t1, TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.1 RθJA(t) = r(t) + RθJA RθJA = 125 °C/W 0.2 0.1 0.05 0.02 0.01 P(pk) t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9412 Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E