FDZ1905PZ

MOSFET – P-Channel, POWERTRENCH), Common Drain: 1.5 V, WLCSP -20 V, -3 A, 126 mW FDZ1905PZ www.onsemi.com General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features two common drain P−channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced 1.5 V POWERTRENCH process with state of the art “low pitch” WLCSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra−low profile packaging, low gate charge, and low rS1S2(on). S1 G1 G2 Features • • • • • • • • • Max rS1S2(on) = 126 mW at VGS = –4.5 V, IS1S2 = –1 A Max rS1S2(on) = 141 mW at VGS = –2.5 V, IS1S2 = –1 A Max rS1S2(on) = 198 mW at VGS = –1.8 V, IS1S2 = –1 A Max rS1S2(on) = 303 mW at VGS = –1.5 V, IS1S2 = –1 A Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA Ultra−thin package: less than 0.65 mm height when mounted to PCB High power and current handling capability HBM ESD protection level > 4 kV (Note 3) This Device is Pb−Free and is RoHS Compliant S2 P−Channel MOSFET PIN 1 S1 G1 S1 S2 G2 S2 TOP BOTTOM WLCSP6 1.5x1x0.6 CASE 567PW MARKING DIAGRAM &Y 5&X &. 5 &Y &X &. = Specific Device Code = Year Date Code = Weekly Date Code = Pin Mark ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2008 January, 2020 − Rev. 2 1 Publication Order Number: FDZ1905PZ/D FDZ1905PZ MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Rating Unit Source1 to Source2 Voltage –20 V VGS Gate to Source Voltage ±8 V IS1S2 Source1 to Source2 Current − Continuous, TA = 25°C (Note 1a) –3 A − Pulsed –15 Power Dissipation (Steady State) TA = 25°C (Note 1a) 1.5 Power Dissipation TA = 25°C (Note 1b) VS1S2 PD TJ, TSTG Parameter W 0.9 Operating and Storage Junction Temperature Range –55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit °C/W RqJA Thermal Resistance, Junction to Ambient (Note 1a) 83 RqJA Thermal Resistance, Junction to Ambient (Note 1b) 140 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS IS1S2 Zero Gate Voltage Source1 to Source2 Current VS1S2 = –16 V, VGS = 0 V − − –1 mA IGSS Gate Body Leakage Current VGS = ±8 V, VS1S2 = 0 V − − ±10 mA –0.4 –0.7 –1.0 V mW ON CHARACTERISTICS (Note 2) VGS(th) rS1S2(on) gFS Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = −250 mA Static Source1 to Source2 On Resistance VGS = –4.5 V, IS1S2 = –1 A − 99 126 VGS = –2.5 V, IS1S2 = –1 A − 112 141 VGS = –1.8 V, IS1S2 = –1 A − 132 198 VGS = –1.5 V, IS1S2 = –1 A − 164 303 VGS = –4.5 V, IS1S2 = –1 A, TJ = 125°C − 135 195 VS1S2 = –5V, IS1S2 = –1A − 8 − S VS1S2 = –10 V, IS1S2 = –1 A VGS = –4.5 V, RGEN = 6 W − 12 22 ns Forward Transconductance SWITCHING CHARACTERISTICS (Note 2) td(on) tr td(off) tf Turn−On Delay Time − 36 58 ns Turn−Off Delay Time Rise Time − 143 229 ns Fall Time − 182 291 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FDZ1905PZ NOTES: 1. RqJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. b. 0°C/W when mounted on a minimum pad of 2 oz copper a. 83°C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 FDZ1905PZ 15 VG2S2 = −4.5 V VG2S2 = −3.0 V 12 VG2S2 = −2.5 V 9 VG2S2 = −1.8 V 6 VG2S2 = −1.5 V PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VG1S1 = −4.5 V 3 0 −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 1 0 2 3 15 VGS = −4.5 V VGS = −3.0 V 12 VGS = −2.5 V 9 6 0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 0 1 2 3 4 5 −VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. On Region Characteristics 2.5 3.0 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VG1S1 = −4.5 V 2.5 NORMALIZED SOURCE1 TO SOURCE2 ON−RESISTANCE NORMALIZED SOURCE1 TO SOURCE2 ON−RESISTANCE VGS = −1.5 V 3 −VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) VG2S2 = −1.5 V 2.0 VG2S2 = −1.8 V 1.5 VG2S2 = −2.5 V 1.0 VG2S2 = −4.5 V VG2S2 = −3.0 V 0.5 0 3 6 9 12 VGS = −1.5 V 2.0 IS1S2 = −1 A VGS = −4.5 V 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 0 3 6 VGS = −4.5 V 9 12 15 Figure 4. Normalized On−Resistance vs Drain Current and Gate Voltage rS1S2(on), SOURCE1 TO SOURCE2 ON−RESISTANCE (mW) 1.4 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) Figure 3. Normalized On−Resistance vs Drain Current and Gate Voltage 1.6 VGS = −3.0 V 1.0 0.5 15 VGS = −2.5 V VGS = −1.8 V 1.5 −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) NORMALIZED SOURCE1 TO SOURCE2 ON−RESISTANCE VGS = −1.8 V 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 500 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 400 IS1S2 = −1 A 300 TJ = 125°C 200 100 TJ = 25°C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 −VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Normalized On−Resistance vs Junction Temperature Figure 6. On−Resistance vs Gate to Source Voltage www.onsemi.com 4 4.5 FDZ1905PZ −IG, GATE LEAKAGE CURRENT (A) 15 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX 12 VS1S2 = −5 V 9 6 TJ = 150°C TJ = 25°C 3 TJ = −55°C 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 0 V −4 10 −5 10 TJ = 150°C −6 10 −7 10 TJ = 25°C −8 10 −9 10 0 3 6 9 12 15 −VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Gate Leakage vs Gate to Source Voltage 10 20 10 100 ms 1 ms 1 10 ms 0.1 0.01 0.1 SINGLE PULSE TJ = MAX RATED RqJA = 140°C/W TA = 25°C THIS AREA IS LIMITED BY rS1S2(on) 1 100 ms 1s 10 s DC 1 0.1 10 SINGLE PULSE RqJA = 140°C/W TA = 25°C 1 10 0 10 −4 10 −3 10 −2 10 −1 10 0 10 1 100 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE−DESCENDIN G ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 −2 10 −1 10 1000 −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) t2 NOTES: DUTY FACTOR: D = t1 / t2 PEAK TJ = PDM x ZqJA x RqJA + TA SINGLE PULSE RqJA = 140°C/W 0.01 −3 10 VGS = −4.5 V 10 60 Figure 9. Forward Bias Safe Operating Area 2 2 −1 10 −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) NORMALIZED THERMAL IMPEDANCE, ZqJA −3 10 −VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) P(PK),M PEAK TRANSIENT POWER (W) −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) −IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 2 10 3 10 FDZ1905PZ ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Shipping† FDZ1905PZ 5 WLCSP6 1.5x1x0.6 (Pb−Free) 7” 8 mm 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP6 1.5x1x0.6 CASE 567PW ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13306G WLCSP6 1.5x1x0.6 DATE 31 OCT 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative