FDZ371PZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.7 A, 75 mΩ Features General Description „ Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). „ Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A „ Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A „ Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A „ Occupies only 1.0 mm2 of PCB area.Less than 30% of the area of 2 x 2 BGA Applications „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ Battery management „ Load switch „ HBM ESD protection level >4.4kV typical (Note 3) „ Battery protection „ RoHS Compliant Pin 1 S S D G Pin 1 TOP BOTTOM WL-CSP 1.0X1.0 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -3.7 -12 Power Dissipation TA = 25°C (Note 1a) 1.7 Power Dissipation TA = 25°C (Note 1b) 0.5 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 75 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking K Device FDZ371PZ ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 Package WL-CSP 1.0X1.0 Thin 1 Reel Size 7” Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Ju ly 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA -1.0 V -20 V 22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.35 -0.6 -4 mV/°C VGS = -4.5 V, ID = -2.0 A 55 75 VGS = -2.5 V, ID = -1.5A 65 90 VGS = -1.8 V, ID = -1.0 A 80 110 VGS = -1.5 V, ID = -1.0 A 100 150 VGS = -4.5 V, ID = -2.0 A, TJ =125°C 80 124 VDD = -5 V, ID = -3.3 A 14 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 750 1000 pF 110 145 pF 100 150 pF Switching Characteristics td(on) Turn-On Delay Time 5.9 12 ns tr Rise Time 9.1 18 ns td(off) Turn-Off Delay Time 124 198 ns tf Fall Time 88 140 ns Qg Total Gate Charge 12 17 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -3.3 A, VGS = -4.5 V, RGEN = 6 Ω VGS = -4.5 V, VDD = -10 V, ID = -3.3 A 1.1 nC 3.4 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.3 A -1.1 (Note 2) IF = -3.3 A, di/dt = 100 A/µs A -0.7 -1.2 V 61 98 ns 29 47 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 75 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 260 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 2 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 12 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V VGS = - 4.5 V -ID, DRAIN CURRENT (A) VGS = - 3.0 V 9 VGS = -2.5 V 6 VGS = - 1.8 V VGS = -1.5 V 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 VGS = -1.5 V 2.0 VGS = -1.8 V 1.5 VGS = -2.5 V 1.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 Figure 1. On-Region Characteristics 3 6 -ID, DRAIN CURRENT (A) 9 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 400 ID = -2.0 A VGS = -4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5 V 0.5 2.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 300 ID = -2.0 A 200 TJ = 125 oC 100 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 12 -IS, REVERSE DRAIN CURRENT (A) 10 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -3.5 V VGS = -3.0 V 9 VDS = -5 V 6 TJ = 150 oC TJ = 25 oC 3 TJ = -55 oC 0 0.5 1.0 1.5 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = -3.3 A Ciss 1000 VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -10 V VDD = -12 V 1.5 Coss 100 0.0 0 3 6 9 12 f = 1 MHz VGS = 0 V 50 0.1 15 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -2 10 -Ig, GATE LEAKAGE CURRENT (A) 20 10 -ID, DRAIN CURRENT (A) Crss 100 us 1 ms 1 THIS AREA IS LIMITED BY rds(on) 10 ms SINGLE PULSE TJ = MAX RATED 0.1 100 ms 1s 10 s DC RθJA = 260 oC/W TA = 25 oC 0.01 0.1 1 10 VDS = 0 V -3 10 -4 10 -5 TJ = 125 oC 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 60 -VDS, DRAIN to SOURCE VOLTAGE (V) 0 3 6 9 12 15 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage 200 P(PK), PEAK TRANSIENT POWER (W) 100 SINGLE PULSE o RθJA = 260 C/W o TA = 25 C 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 4 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 260 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 5 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAA-004 ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2009 Fairchild Semiconductor Corporation FDZ371PZ Rev.C1 7 www.fairchildsemi.com FDZ371PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM BitSiC™ Global Power Resource PowerTrench TinyBoost® Build it Now™ GreenBridge™ PowerXS™ TinyBuck® Green FPS™ CorePLUS™ Programmable Active Droop™ TinyCalc™ ® Green FPS™ e-Series™ CorePOWER™ QFET TinyLogic® Gmax™ QS™ CROSSVOLT™ TINYOPTO™ GTO™ Quiet Series™ CTL™ TinyPower™ IntelliMAX™ Current Transfer Logic™ RapidConfigure™ TinyPWM™ ISOPLANAR™ DEUXPEED® ™ TinyWire™ Marking Small Speakers Sound Louder Dual Cool™ TranSiC™ and Better™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ TriFault Detect™ MegaBuck™ EfficentMax™ SignalWise™ TRUECURRENT®* MICROCOUPLER™ ESBC™ SmartMax™ μSerDes™ MicroFET™ SMART START™ ® MicroPak™ Solutions for Your Success™ MicroPak2™ SPM® Fairchild® MillerDrive™ STEALTH™ UHC® Fairchild Semiconductor® MotionMax™ Ultra FRFET™ SuperFET® FACT Quiet Series™ mWSaver® SuperSOT™-3 UniFET™ FACT® OptoHiT™ SuperSOT™-6 VCX™ FAST® ® OPTOLOGIC SuperSOT™-8 VisualMax™ FastvCore™ ® ® OPTOPLANAR SupreMOS VoltagePlus™ FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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