FFSH1665ADN-F155

FFSH1665ADN-F155 Silicon Carbide Schottky Diode 650 V, 16 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com Features • • • • • • • Schottky Diode Max Junction Temperature 175°C Avalanche Rated 49 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant TO−247−3LD CASE 340CH Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MARKING DIAGRAM $Y&Z&3&K FFSH 1665ADN $Y &Z &3 &K FFSH1665ADN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 December, 2019 − Rev. 2 1 Publication Order Number: FFSH1665ADN−F155/D FFSH1665ADN−F155 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Value Unit 650 V 49 mJ Continuous Rectified Forward Current @ TC < 150°C 8*/16** A Continuous Rectified Forward Current @ TC < 135°C 11*/22** Symbol VRRM EAS Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy IF IF, Max (Note 1) Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 750 A TC = 150°C, 10 ms 730 A IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 49 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 34 A Ptot Power Dissipation TC = 25°C 77 W TC = 150°C TJ, TSTG Operating and Storage Temperature Range 13 W −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 64 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 14 A, V = 50 V. THERMAL CHARACTERISTICS Symbol RqJC NOTE: Parameter Thermal Resistance, Junction to Case, Max Value Unit 1.96*/0.95** °C/W * Per Leg, ** Per Device ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 8 A, TC = 25°C − 1.5 1.75 V IF = 8 A, TC = 125°C − 1.6 2.0 IF = 8 A, TC = 175°C − 1.72 2.4 VR = 650 V, TC = 25°C − − 200 VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 Total Capacitive Charge V = 400 V − 27 − nC Total Capacitance VR = 1 V, f = 100 kHz − 463 − pF VR = 200 V, f = 100 kHz − 48 − VR = 400 V, f = 100 kHz − 38 − Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH1665ADN−F155 FFSH1665ADN TO−247−3LD 30 Units www.onsemi.com 2 FFSH1665ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) −5 16 10 TJ = 175 oC 12 TJ = 25 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) TJ = −55oC TJ = 125 oC oC TJ = 75 oC 8 4 0 0.0 −6 10 −7 10 0.5 1.0 1.5 2.0 2.5 3.0 200 500 600 650 Figure 2. Reverse Characteristics PTOT, POWER DISSIPATION (W) IF, PEAK FORWARD CURRENT (A) 400 80 D = 0.1 80 60 D = 0.2 D = 0.3 D = 0.5 D = 0.7 0 25 D=1 50 75 100 125 150 60 40 20 0 25 175 o 50 75 100 125 150 175 o TC, CASE TEMPERATURE (C) TC, CASE TEMPERATURE (C) Figure 3. Current Derating Figure 4. Power Derating 40 1000 30 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) 300 TJ = −55 oC VR, REVERSE VOLTAGE (V) 100 20 10 0 TJ = 125 oC TJ = 25 oC −9 10 Figure 1. Forward Characteristics 20 TJ = 75 oC −8 10 VF, FORWARD VOLTAGE (V) 40 TJ = 175 oC 0 100 200 300 400 500 100 10 0.1 600650 VR, REVERSE VOLTAGE (V) 1 10 100 650 VR, REVERSE VOLTAGE (V) Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 FFSH1665ADN−F155 TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) EC, CAPACITIVE ENERGY ( m J) 10 8 6 4 2 0 0 100 200 300 400 500 600650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 DUTY CYCLE−DESCENDING ORDER D=0.5 0.2 0.1 PDM 0.05 0.02 0.01 0.1 t1 t2 NOTES: 0.01 0.001 ZqJC(t) = r(t) x RqJC RqJC = 1.96 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.0005 −6 10 −5 −4 10 −3 10 −2 10 1 −1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD − t0 t1 Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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