FFSP0665B

FFSP0665B Silicon Carbide Schottky Diode 650 V, 6 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com ELECTRICAL CONNECTION Features • • • • • • • Max Junction Temperature 175°C Avalanche Rated 26 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1. Cathode 1 Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuit MARKING DIAGRAM (TC = 25°C, Unless otherwise specified) VRRM EAS IF IF, Max IF, SM Ptot Parameter Value Unit Peak Repetitive Reverse Voltage 650 V Single Pulse Avalanche Energy (Note 1) 26 mJ Continuous Rectified Forward Current @ TC < 150°C 6.0 A Continuous Rectified Forward Current @ TC < 135°C 8.0 Non−Repetitive Peak Forward Surge Current TC = 25°C, 10 ms 473 TC = 150°C, 10 ms 408 Non−Repetitive Forward Surge Current Half−Sine Pulse, tp = 8.3 ms 28 A Power Dissipation TC = 25°C 49 W TC = 150°C 8.3 TJ, TSTG Operating and Storage Temperature Range September, 2019 − Rev. 2 $Y&Z&3&K FFSP 0665B A −55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 26 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 10.2 A, V = 50 V. © Semiconductor Components Industries, LLC, 2019 2 TO−220−2LD CASE 340BB ABSOLUTE MAXIMUM RATINGS Symbol 2. Anode 1 $Y &Z &3 &K FFSP0665B = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: FFSP0665B/D FFSP0665B THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. Ratings Unit 2.46 °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFSP0665B FFSP0665B TO220 Tube N/A N/A 50 Units ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted Symbol VF IR QC C Parameter Forward Voltage Reverse Current Test Conditions Min Typ Max Unit IF = 6 A, TC = 25°C 1.38 1.7 V IF = 6 A, TC = 125°C 1.6 2.0 IF = 6 A, TC = 175°C 1.72 2.4 VR = 650 V, TC = 25°C 0.025 40 VR = 650 V, TC = 125°C 0.08 80 VR = 650 V, TC = 175°C 0.22 160 mA Total Capacitive Charge V = 400 V 15 nC Total Capacitance VR = 1 V, f = 100 kHz 259 pF VR = 200 V, f = 100 kHz 29 VR = 400 V, f = 100 kHz 23 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FFSP0665B TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted 9 IR, REVERSE CURRENT (A) TJ = 25°C TJ = 175°C TJ = 75°C TJ = 125°C 6 3 0 0 80 IF, PEAK FORWARD CURRENT (A) 10−6 TJ = −55°C 0.5 1.0 1.5 2.0 2.5 100 200 300 400 600 650 500 Figure 2. Reverse Characteristics 70 D = 0.3 D = 0.5 20 D = 1.0 D = 0.7 50 75 100 125 150 56 42 28 14 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 3. Current Derating Figure 4. Power Dissipation 175 1000 25 20 CAPACITANCE (pF) QC, CAPACITIVE CHARGE (nC) TJ = −55°C 0 Figure 1. Forward Characteristics D = 0.2 25 TJ = 75°C TJ = 25°C VR, REVERSE VOLTAGE (V) 60 0 TJ = 125°C 10−8 VF, FORWARD VOLTAGE (V) D = 0.1 40 TJ = 175°C 10−7 10−9 3.0 PTOT, POWER DISSIPATION (W) IF, FORWARD CURRENT (A) 12 15 10 100 5 0 0 100 200 300 400 500 10 600 650 0.1 1 10 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 5. Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage www.onsemi.com 3 650 FFSP0665B TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued) EC, CAPACITIVE ENERGY (mJ) 6 4 2 0 0 100 200 300 400 500 600 650 VR, REVERSE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance Stored Energy 2 1 50% Duty Cycle 20% 0.1 10% 5% 2% 0.01 0.001 1% Single Pulse 10−6 10−5 10−4 10−3 10−2 t, RECTANGULAR PULSE DURATION (sec) Figure 8. Junction−to−Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH Figure 9. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 10−1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7° 3° 5° 3° 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5° 3° 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5° 3° 5° 3° 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO−220−2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5−2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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