FGAF20N60SMD

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A • High Input Impedance • Fast Swiching: EOFF = 7 uJ/A • Tightened Parameter Distribution • RoHS Compliant Applications • Sewing Machine, CNC • Home Appliances, Motor-Control C G E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF IFM (1) PD 25oC Collector Current @ TC = 40 A Collector Current @ TC = 100oC 20 A 60 A Diode Forward Current @ TC = 25oC 20 A Diode Forward Current @ TC = 100oC 10 A 60 A 75 W Pulsed Collector Current Pulsed Diode Maximum Forward Current 25oC Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 100oC 37.5 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C o C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 1 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT March 2014 Symbol RθJC(IGBT) Parameter Typ. Max. - 2.0 o C/W C/W Thermal Resistance, Junction to Case Unit RθJC(Diode) Thermal Resistance, Junction to Case - 4.0 o RθJA Thermal Resistance, Junction to Ambient - 40 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGAF20N60SMD FGAF20N60SMD TO-3PF - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.62 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.7 6.0 V IC = 20A, VGE = 15V - 1.7 2.5 V IC = 20A, VGE = 15V, TC = 175oC - 1.9 - V - 925 - pF VCE = 30V, VGE = 0V, f = 1MHz - 89 - pF - 30 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 91 - ns tf Fall Time - 21 27 ns Eon Turn-On Switching Loss - 452 - uJ Eoff Turn-Off Switching Loss - 141 187 uJ Ets Total Switching Loss - 593 - uJ td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 19 - ns td(off) Turn-Off Delay Time - 93 - ns tf Fall Time - 16 - ns Eon Turn-On Switching Loss - 667 - uJ Eoff Turn-Off Switching Loss - 317 - uJ Ets Total Switching Loss - 984 - uJ ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 20A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter Min. Typ. Max Unit - 64 - nC - 6.2 - nC - 32 - nC Min. Typ. Max Unit TC = 25°C unless otherwise noted Test Conditions - 2.3 - TC = 175oC - 1.67 - Reverse Recovery Energy TC = 175oC - 13.8 - trr Diode Reverse Recovery Time TC = 25oC - 26.7 - TC = 175oC - 88.2 - Qrr Diode Reverse Recovery Charge TC = 25oC - 42 - - 245 - VFM Diode Forward Voltage Erec ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 TC = 25oC IF = 10A IF =10A, dIF/dt = 200A/µs TC = 3 175oC V uJ ns nC www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 65 20V o TC = 25 C 60 65 60 12V 10V 15V 50 40 30 20 VGE = 8V 10 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] 30 VGE = 8V 20 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] 6.0 60 Common Emitter VGE = 15V o TC = 25 C o TC = 175 C 30 20 30 20 0 4.0 Collector-Emitter Voltage, VCE [V] 2.0 20A 1.5 IC = 10A 75 100 125 150 o Case Temperature, TC [ C] ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 4 6 8 10 Gate-Emitter Voltage,VGE [V] 20 40A 50 2 12 Figure 6. Saturation Voltage vs. VGE Common Emitter VGE = 15V 2.5 1.0 25 o TC = 175 C 40 0 1.0 2.0 3.0 Collector-Emitter Voltage, VCE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 o TC = 25 C 10 10 0 0.0 Common Emitter VCE = 20V 50 Collector Current, IC [A] Collector Current, IC [A] 40 Figure 4. Transfer Characteristics 60 Collector-Emitter Voltage, VCE [V] 10V 50 0 0.0 6.0 Figure 3. Typical Saturation Voltage Characteristics 40 12V 10 0 0.0 50 20V o TC = 175 C 15V Collector Current, IC [A] Collector Current, IC [A] Figure 2. Typical Output Characteristics o TC = -40 C 15 10 20A IC = 10A 4 40A 5 0 175 Common Emitter 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 15 10 20A 5 0 40A IC = 10A TC = 175 C 16 12 8 IC = 20A 40A 10A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 2000 Common Emitter Cies o Gate-Emitter Voltage, VGE [V] Capacitance [pF] 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz o TC = 25 C TC = 25 C 12 400V 300V 9 6 3 Cres 0 20 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] VCC = 200V 0 30 Figure 11. SOA Characteristics 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 100µs 10 tr 1ms 10ms Switching Time [ns] Collector Current, Ic [A] 10µs DC 1 *Notes: 0.1 o td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 20A 1. TC = 25 C o TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 1 10 100 Collector-Emitter Voltage, VCE [V] ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 o TC = 175 C 1 1000 5 0 10 20 30 Gate Resistance, RG [Ω] 40 50 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 100 1000 tr Switching Time [ns] Switching Time [ns] td(off) 100 tf 10 Common Emitter VCC = 400V, VGE = 15V IC = 20A 10 td(on) Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 1 0 10 20 30 40 Gate Resistance, RG [Ω] 1 10 50 20 30 40 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 1000 Eon Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C Eoff TC = 175 C Switching Loss [uJ] Switching Time [ns] o 100 td(off) tf 100 Common Emitter VCC = 400V, VGE = 15V IC = 20A o TC = 25 C o TC = 175 C 10 10 20 30 Collector Current, IC [A] 10 40 Figure 17. Switching Loss vs. Collector Current 0 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 10000 100 Eon Collector Current, IC [A] Switching Loss [uJ] 1000 100 Eoff Common Emitter VGE = 15V, RG = 10Ω 10 o TC = 25 C 10 Safe Operating Area o o TC = 175 C 1 10 20 30 Collector Current, IC [A] ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 VGE = 15V, TC = 175 C 1 40 1 6 10 100 Collector-Emitter Voltage, VCE [V] 1000 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Power Dissipation 70 Common Emitter VGE = 15V Common Emitter VGE = 15V 60 Power Dissipation, PD [W] Drain Current, ID [A] 20 15 10 5 50 40 30 20 10 0 25 50 75 100 125 150 o Case Temperature, TC [ C] 0 25 175 Figure 21. Load Current Vs. Frequency 50 75 100 125 150 o Case Temperature, TC [ C] 175 Figure 22. Forward Characteristics 60 100 VCC = 400V load Current : peak of square wave Forward Current, IF [A] Collector Current, IC A] 50 40 o TC = 100 C 30 20 10 Duty cycle : 50% o TC = 175 C 10 o TC = 25 C o T = 100 C C 0 1k Powe Dissipation = 37.5 W 10k 100k 1 1M 0 Switching Frequency, f [Hz] Figure 23. Reverse Current Stored Recovery Charge, Qrr [nC] 75 o 100 TJ = 175 C 10 1 o TJ = 100 C 0.1 o di/dt = 200A/µs 50 25 di/dt = 100A/µs TJ = 25 C 0.01 50 4 Figure 24. Stored Charge 1000 Reverse Current , IR [µ A] 1 2 3 Forward Voltage, VF [V] o Tc = 25 C 0 200 400 Reverse Voltage, VR [V] ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 600 5 10 15 20 Forward Current, IF [A] 7 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Typical Performance Characteristics Figure 25. Reverse Recovery Time Reverse Recovery Time, trr [ns] 40 35 di/dt = 100A/µs 30 di/dt = 200A/µs 25 o Tc = 25 C 20 5 10 15 20 Forward Current, IF [A] Figure 26.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] Figure 27.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 5 0.5 1 0.2 0.1 0.05 0.1 0.02 PDM 0.01 t1 single pulse 0.01 1E-5 1E-4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FGAF20N60SMD Rev. C4 8 www.fairchildsemi.com FGAF20N60SMD — 600 V, 20 A Field Stop IGBT Mechanical Dimensions Figure 28. TO3PF,MOLDED,3LD,FULLPACK (AG) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. 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