FGD3N60LSDTM-T

FGD3N60LSD IGBT FGD3N60LSD IGBT Description Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature. • High Input Impedance Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G D-PAK E E Absolute Maximum Ratings Symbol Description FGD3N60LSD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 25 V IC Collector Current @ TC = 25°C 6 A Collector Current @ TC = 100°C 3 A 25 A 3 A ICM (1) Pulsed Collector Current IF Diode Continous Forward Current (1) @ TC = 100°C I FM Diode Maximum Forward Current PD Maximum Power Dissipation TJ Operating Junction Temperature Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 250 °C 25 A 40 W 0.32 W/°C -55 to +150 °C @ TC = 25°C Derating Factor Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC (IGBT) RθJA Typ. Max. Units Thermal Resistance, Junction-to-Case Parameter -- 3.1 °C/W Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) -- 100 °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2006 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Publication Order Number: FGD3N60LSD/D Device Marking Device Package Reel Size Tape Width Quantity FGD3N60LSD FGD3N60LSDTM D-PAK 380mm 16mm 2500 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA IC = 3mA, VCE = VGE 2.5 3.2 5.0 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 3A, VGE = 10V -- 1.2 1.5 V IC = 6A, VGE = 10V -- 1.8 -- V Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 25V, VGE = 0V, f = 1MHz -- 185 -- pF -- 20 -- pF -- 5.5 -- pF -- 40 -- ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Eon VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 25°C -- 40 -- ns -- 600 -- ns Fall Time -- 600 -- ns Turn-On Switching Loss -- 250 -- uJ Eoff Turn-Off Switching Loss -- 1.00 -- mJ Ets Total Switching Loss -- 1.25 -- mJ -- 40 -- ns -- 45 -- ns td(on) Turn-On Delay Time tr Rise Time VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 125°C td(off) Turn-Off Delay Time -- 620 -- ns tf Fall Time -- 800 -- ns Eon Turn-On Switching Loss -- 300 -- uJ Eoff Turn-Off Switching Loss -- 1.9 -- mJ -- 2.2 -- mJ -- 12.5 -- nC -- 2.8 -- nC -- 4.9 -- nC -- 7.5 -- nH Ets Total Switching Loss Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge Le Internal Emitter Inductance VCE = 480 V, IC = 3A, VGE = 10V Measured 5mm from PKG www.onsemi.com 2 FGD3N60LSD IGBT Package Marking and Ordering Information C Symbol VFM trr Irr Qrr = 25°C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Test Conditions IF = 3A IF = 3A, di/dt = 100A/us VR = 200V Diode Reverse Recovery Charge www.onsemi.com 3 Min. Typ. Max. Units V TC = 25°C -- 1.5 1.9 TC = 100°C -- 1.55 -- TC = 25°C -- 234 -- TC = 100°C -- -- -- TC = 25°C -- 2.64 -- TC = 100°C -- -- -- TC = 25°C -- 309 -- TC = 100°C -- -- -- ns A nC FGD3N60LSD IGBT Electrical Characteristics of DIODE T FGD3N60LSD IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 30 Figure 2. Typical Output Characteristics 30 Common Emitter T C = 25 ° C 20V Common Emitter TC = 125°C 15V Collector Current, IC [A] Collector Current, IC [A] 24 10V 18 V GE = 8V 12 6 20V 24 15V 18 10V VGE = 8V 12 6 0 0 2 4 6 8 0 0 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Output Characteristics 10 T C = 25 ° C Collector Current, IC [A] Collector Current, IC [A] Common Emitter V GE = 10V T C = 125 ° C 6 4 2 8 Common Emitter V CE = 20V T C = 25 °C T C = 125° C 6 4 2 0 0 0.1 1 10 1 Figure 5. Saturation Voltage vs. Case 3 Figure 6. Capacitance Characteristics 600 Comm on Emitter V GE = 10V Com m on Em itter V GE = 0V, f = 1MHz T C = 25 ° C Capacitance [pF] 500 2 IC = 6A IC = 3A 1 10 Gate-Emitter Voltage, V GE[V] Collector-Emitter Voltage, V CE[V] Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 10 8 2 4 6 Collector-Emitter Voltage, VCE [V] IC = 1.5A 400 Cies 300 Coes 200 Cres 100 0 0 0 30 60 90 120 150 1 Case Temperature, T C [° C] 10 Collector - Emitter Voltage, V CE [V] www.onsemi.com 4 Figure 7. Gate Charge 12 Figure 8. Turn-On Characteristics vs. Gate Resistance 1000 C o m m o n E m itte r V CC = 4 8 0 V , V GE = 1 0 V Vcc = 480V T C = 25 ° C IC = 3 A Switching Time [ns] Gate - Emitter Voltage, VGE [V] (Continued) Com m on Em itter R L = 160 Ω 10 FGD3N60LSD IGBT Typical Performance Characteristics 8 6 4 T C = 25°C T C = 125°C T on 100 Tr 2 0 0 2 4 6 8 10 10 12 200 400 600 800 1000 G ate R esistance, R G [ Ω ] Gate Charge, Q g [nC] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance 10000 10000 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A Eoff T C = 125 ° C Switching Loss [µJ] Switching Time [ns] T C = 25 ° C Toff 1000 Tf 1000 Eon 100 Com m on Em itter V CC = 480V, V GE = 10V IC = 3A T C = 25 ° C 100 200 400 600 T C = 125 °C 10 800 1000 200 400 Gate Resistance, R G [ Ω ] Gate Resistance, R G [Ω ] Figure 11. Turn-On Characteristics vs. Collector Current 600 800 1000 Figure 12. Turn-Off Characteristics vs. Collector Current Common Emitter Vcc = 480V, V GE = 10V RG = 470 Ω 100 1000 T C = 125 ° C Toff Switching Time [ns] Switching Time [ns] T C = 25° C Ton Tr Tf Common Emitter Vcc = 480 V, VGE = 10V RG = 470Ω T C = 25 ° C T C = 125° C 10 2 3 Collector Current, IC [A] 100 4 2 www.onsemi.com 5 3 Collector Current, IC [A] 4 FGD3N60LSD IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Figure 14. Forward Characteristics 100 Tc = 25°C Tc = 100°C Common Emitter Vcc = 480 V, VGE = 10V RG = 470Ω TC = 25°C Forward Current, IF [A] Switching Loss [µJ] TC = 125°C Eoff 1000 Eon 10 1 100 0.1 2 3 Collector Current, IC [A] 0 4 Figure 15. Forward Voltage Drop Vs Tj 1 2 3 4 Forward Voltage Drop, VF [V] Figure 16. SOA Characteristics 100 2.8 Collector Current, Ic [A] 2.4 IF=6 A 2.0 1.6 IF=3 A 50µs 10 100µs Ic MAX (Continuous) 1ms 1 DC Operation Single Nonrepetitive Pulse Tc = 25°C Curves must be derated linearly with increase in temperature 0.1 IF=1.5 A 1.2 0.01 25 50 75 100 125 0.1 Junction Temperature, Tj [°C] 1 10 100 Collector - Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 10 0 .5 Thermal Response [Zthjc] Forward Voltage Drop, VF [V] Ic MAX (Pulsed) 1 0 .2 0 .1 0 .0 5 0 .1 0 .0 2 Pdm s in g le p u ls e t1 0 .0 1 t2 0 .0 1 1 E -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -4 1 E -3 0 .0 1 0 .1 R e c ta ngula r P uls e D ura tio n [s e c ] www.onsemi.com 6 1 10 1000 FGD3N60LSD IGBT Mechanical Dimensions D-PAK Dimensions in Millimeters www.onsemi.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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