FGD3N60LSDTM

FGD3N60LSD IGBT September 2006 FGD3N60LSD IGBT Features • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance tm Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature. Applications • HID Lamp Applications • Piezo Fuel Injection Applications C C G G E D-PAK E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Derating Factor Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C (1) FGD3N60LSD 600 ± 25 6 3 25 3 25 40 0.32 -55 to +150 -55 to +150 250 Units V V A A A A A W W/°C °C °C °C Thermal Characteristics Symbol RθJC (IGBT) RθJA Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. --- Max. 3.1 100 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGD3N60LSD Rev. B FGD3N60LSD IGBT Package Marking and Ordering Information Device Marking FGD3N60LSD Device FGD3N60LSDTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, IC = 6A, VGE = 10V VGE = 10V 2.5 --3.2 1.2 1.8 5.0 1.5 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, VGE = 0V, f = 1MHz ---185 20 5.5 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance Measured 5mm from PKG VCE = 480 V, IC = 3A, VGE = 10V VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 125°C VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 25°C ------------------40 40 600 600 250 1.00 1.25 40 45 620 800 300 1.9 2.2 12.5 2.8 4.9 7.5 ------------------ns ns ns ns uJ mJ mJ ns ns ns ns uJ mJ mJ nC nC nC nH FGD3N60LSD Rev. B 2 www.fairchildsemi.com FGD3N60LSD IGBT Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25°C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 3A Test Conditions TC = 25°C TC = 100°C IF = 3A, di/dt = 100A/us VR = 200V TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C Min. --------- Typ. 1.5 1.55 234 -2.64 -309 -- Max. 1.9 -------- Units V ns A nC FGD3N60LSD Rev. B 3 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 30 Common Emitter T C = 25°C 20V 15V Figure 2. Typical Output Characteristics 30 Common Emitter TC = 125°C Collector Current, IC [A] 24 Collector Current, IC [A] 10V 24 20V 15V 18 V GE = 8 V 18 10V VGE = 8V 12 12 6 6 0 0 2 4 6 8 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Output Characteristics 10 Common Emitter V GE = 1 0V Figure 4. Transfer Characteristics 10 Common Emitter V CE = 20V T C = 25°C T C = 1 25° C Collector Current, IC [A] T C = 1 25 ° C 6 Collector Current, IC [A] 1 10 8 T C = 25°C 8 6 4 4 2 2 0 0.1 Collector-Emitter Voltage, V CE[V] 0 1 10 Gate-Emitter Voltage, V GE[V] Figure 5. Saturation Voltage vs. Case 3 Comm on Emitter V GE = 1 0V Figure 6. Capacitance Characteristics 600 Com m on Em itter V GE = 0 V, f = 1MHz T C = 2 5 °C Collector-Emitter Voltage, VCE [V] 500 Capacitance [pF] 2 IC = 6 A 400 Cies 300 Coes 200 Cres 1 IC = 3 A IC = 1 .5A 100 0 0 30 60 90 120 150 0 1 10 Case Temperature, T C [° C] Collector - Emitter Voltage, V CE [V] FGD3N60LSD Rev. B 4 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics Figure 7. Gate Charge 12 Com m on Em itter R L = 1 60 Ω 10 (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance 1000 C o m m o n E m itte r V CC = 4 8 0 V , V GE = 1 0 V IC = 3 A T C = 25°C T C = 125°C Gate - Emitter Voltage, VGE [V] Vcc = 480V T C = 25°C 8 6 Switching Time [ns] 100 T on Tr 4 2 0 0 2 4 6 8 10 12 10 200 400 600 800 1000 Gate Charge, Q g [nC] G ate R esistance, R G [ Ω ] Figure 9. Turn-Off Characteristics vs. Gate Resistance 10000 Com m on Em itter V CC = 4 80V, V GE = 1 0V IC = 3 A T C = 2 5°C Switching Time [ns] Toff 1000 Tf T C = 1 25 ° C Figure 10. Switching Loss vs. Gate Resistance 10000 Eoff Switching Loss [µJ] 1000 Eon 100 Com m on Em itter V CC = 4 80V, V GE = 1 0V IC = 3 A T C = 2 5 °C T C = 1 25 °C 100 200 400 600 800 1000 10 Gate Resistance, R G [Ω ] 2 00 400 Gate Resistance, R G [ Ω ] 600 800 1000 Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter Vcc = 480V, V GE = 1 0V 100 RG = 4 70 Ω T C = 1 25 ° C T C = 2 5° C Ton Figure 12. Turn-Off Characteristics vs. Collector Current 1000 Switching Time [ns] Toff Tf Tr Switching Time [ns] Common Emitter Vcc = 480 V, VGE = 10V RG = 470Ω T C = 25 ° C 10 2 Collector Current, IC [A] 3 4 100 2 T C = 125° C Collector Current, IC [A] 3 4 FGD3N60LSD Rev. B 5 www.fairchildsemi.com FGD3N60LSD IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter Vcc = 480 V, VGE = 10V RG = 470Ω TC = 25°C Figure 14. Forward Characteristics 100 Tc = 25°C Tc = 100°C Forward Current, IF [A] TC = 125°C 10 Switching Loss [µJ] 1000 Eoff 1 Eon 100 0.1 2 3 Collector Current, IC [A] 4 0 1 2 3 4 Forward Voltage Drop, VF [V] Figure 15. Forward Voltage Drop Vs Tj 2.8 Figure 16. SOA Characteristics 100 Ic MAX (Pulsed) Forward Voltage Drop, VF [V] 2.4 Collector Current, Ic [A] 10 Ic MAX (Continuous) 100µs 1ms 1 DC Operation 50µs IF=6 A 2.0 1.6 IF=3 A IF=1.5 A 0.1 1.2 Single Nonrepetitive Pulse Tc = 25°C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 25 50 75 100 125 Junction Temperature, Tj [°C] Collector - Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 10 0 .5 Thermal Response [Zthjc] 1 0 .2 0 .1 0 .0 5 0 .1 0 .0 2 s in g le p u ls e 0 .0 1 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta ngula r P uls e D ura tio n [s e c ] FGD3N60LSD Rev. B 6 www.fairchildsemi.com FGD3N60LSD IGBT Mechanical Dimensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters FGD3N60LSD Rev. B 7 (1.00) www.fairchildsemi.com 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 FGD3N60LSD IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FGD3N60LSD Rev. B 8 www.fairchildsemi.com