FGD3N60LSD IGBT
FGD3N60LSD
IGBT
Description
Features
• High Current Capability
• Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
ON Semiconductor's Insulated Gate Bipolar Transistors
(IGBTs)
provide very low conduction losses. The device is
designed for applica-tions where very low On-Voltage Drop is
a required feature.
• High Input Impedance
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
C
C
G
G
D-PAK
E
E
Absolute Maximum Ratings
Symbol
Description
FGD3N60LSD
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 25
V
IC
Collector Current
@ TC = 25°C
6
A
Collector Current
@ TC = 100°C
3
A
25
A
3
A
ICM (1)
Pulsed Collector Current
IF
Diode Continous Forward Current
(1)
@ TC = 100°C
I FM
Diode Maximum Forward Current
PD
Maximum Power Dissipation
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
250
°C
25
A
40
W
0.32
W/°C
-55 to +150
°C
@ TC = 25°C
Derating Factor
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC (IGBT)
RθJA
Typ.
Max.
Units
Thermal Resistance, Junction-to-Case
Parameter
--
3.1
°C/W
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
--
100
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FGD3N60LSD/D
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGD3N60LSD
FGD3N60LSDTM
D-PAK
380mm
16mm
2500
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
--
V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 100
nA
IC = 3mA, VCE = VGE
2.5
3.2
5.0
V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 3A,
VGE = 10V
--
1.2
1.5
V
IC = 6A,
VGE = 10V
--
1.8
--
V
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 25V, VGE = 0V,
f = 1MHz
--
185
--
pF
--
20
--
pF
--
5.5
--
pF
--
40
--
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Eon
VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 25°C
--
40
--
ns
--
600
--
ns
Fall Time
--
600
--
ns
Turn-On Switching Loss
--
250
--
uJ
Eoff
Turn-Off Switching Loss
--
1.00
--
mJ
Ets
Total Switching Loss
--
1.25
--
mJ
--
40
--
ns
--
45
--
ns
td(on)
Turn-On Delay Time
tr
Rise Time
VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 125°C
td(off)
Turn-Off Delay Time
--
620
--
ns
tf
Fall Time
--
800
--
ns
Eon
Turn-On Switching Loss
--
300
--
uJ
Eoff
Turn-Off Switching Loss
--
1.9
--
mJ
--
2.2
--
mJ
--
12.5
--
nC
--
2.8
--
nC
--
4.9
--
nC
--
7.5
--
nH
Ets
Total Switching Loss
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCE = 480 V, IC = 3A,
VGE = 10V
Measured 5mm from PKG
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2
FGD3N60LSD IGBT
Package Marking and Ordering Information
C
Symbol
VFM
trr
Irr
Qrr
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Test Conditions
IF = 3A
IF = 3A,
di/dt = 100A/us
VR = 200V
Diode Reverse Recovery Charge
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3
Min.
Typ.
Max.
Units
V
TC = 25°C
--
1.5
1.9
TC = 100°C
--
1.55
--
TC = 25°C
--
234
--
TC = 100°C
--
--
--
TC = 25°C
--
2.64
--
TC = 100°C
--
--
--
TC = 25°C
--
309
--
TC = 100°C
--
--
--
ns
A
nC
FGD3N60LSD IGBT
Electrical Characteristics of DIODE T
FGD3N60LSD IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
30
Figure 2. Typical Output Characteristics
30
Common Emitter
T C = 25 ° C
20V
Common Emitter
TC = 125°C
15V
Collector Current, IC [A]
Collector Current, IC [A]
24
10V
18
V GE = 8V
12
6
20V
24
15V
18
10V
VGE = 8V
12
6
0
0
2
4
6
8
0
0
Collector-Emitter Voltage, V CE [V]
Figure 3. Typical Output Characteristics
10
T C = 25 ° C
Collector Current, IC [A]
Collector Current, IC [A]
Common Emitter
V GE = 10V
T C = 125 ° C
6
4
2
8
Common Emitter
V CE = 20V
T C = 25 °C
T C = 125° C
6
4
2
0
0
0.1
1
10
1
Figure 5. Saturation Voltage vs. Case
3
Figure 6. Capacitance Characteristics
600
Comm on Emitter
V GE = 10V
Com m on Em itter
V GE = 0V, f = 1MHz
T C = 25 ° C
Capacitance [pF]
500
2
IC = 6A
IC = 3A
1
10
Gate-Emitter Voltage, V GE[V]
Collector-Emitter Voltage, V CE[V]
Collector-Emitter Voltage, VCE [V]
8
Figure 4. Transfer Characteristics
10
8
2
4
6
Collector-Emitter Voltage, VCE [V]
IC = 1.5A
400
Cies
300
Coes
200
Cres
100
0
0
0
30
60
90
120
150
1
Case Temperature, T C [° C]
10
Collector - Emitter Voltage, V CE [V]
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Figure 7. Gate Charge
12
Figure 8. Turn-On Characteristics vs. Gate
Resistance
1000
C o m m o n E m itte r
V CC = 4 8 0 V , V GE = 1 0 V
Vcc = 480V
T C = 25 ° C
IC = 3 A
Switching Time [ns]
Gate - Emitter Voltage, VGE [V]
(Continued)
Com m on Em itter
R L = 160 Ω
10
FGD3N60LSD IGBT
Typical Performance Characteristics
8
6
4
T C = 25°C
T C = 125°C
T on
100
Tr
2
0
0
2
4
6
8
10
10
12
200
400
600
800 1000
G ate R esistance, R G [ Ω ]
Gate Charge, Q g [nC]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
10000
10000
Com m on Em itter
V CC = 480V, V GE = 10V
IC = 3A
Eoff
T C = 125 ° C
Switching Loss [µJ]
Switching Time [ns]
T C = 25 ° C
Toff
1000
Tf
1000
Eon
100
Com m on Em itter
V CC = 480V, V GE = 10V
IC = 3A
T C = 25 ° C
100
200
400
600
T C = 125 °C
10
800 1000
200
400
Gate Resistance, R G [ Ω ]
Gate Resistance, R G [Ω ]
Figure 11. Turn-On Characteristics vs.
Collector Current
600
800 1000
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, V GE = 10V
RG = 470 Ω
100
1000
T C = 125 ° C
Toff
Switching Time [ns]
Switching Time [ns]
T C = 25° C
Ton
Tr
Tf
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
T C = 25 ° C
T C = 125° C
10
2
3
Collector Current, IC [A]
100
4
2
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5
3
Collector Current, IC [A]
4
FGD3N60LSD IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
100
Tc = 25°C
Tc = 100°C
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470Ω
TC = 25°C
Forward Current, IF [A]
Switching Loss [µJ]
TC = 125°C
Eoff
1000
Eon
10
1
100
0.1
2
3
Collector Current, IC [A]
0
4
Figure 15. Forward Voltage Drop Vs Tj
1
2
3
4
Forward Voltage Drop, VF [V]
Figure 16. SOA Characteristics
100
2.8
Collector Current, Ic [A]
2.4
IF=6 A
2.0
1.6
IF=3 A
50µs
10
100µs
Ic MAX (Continuous)
1ms
1
DC Operation
Single Nonrepetitive
Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
IF=1.5 A
1.2
0.01
25
50
75
100
125
0.1
Junction Temperature, Tj [°C]
1
10
100
Collector - Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
0 .5
Thermal Response [Zthjc]
Forward Voltage Drop, VF [V]
Ic MAX (Pulsed)
1
0 .2
0 .1
0 .0 5
0 .1
0 .0 2
Pdm
s in g le p u ls e
t1
0 .0 1
t2
0 .0 1
1 E -5
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 E -4
1 E -3
0 .0 1
0 .1
R e c ta ngula r P uls e D ura tio n [s e c ]
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6
1
10
1000
FGD3N60LSD IGBT
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
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7
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