LMV301SQ3T2G

DATA SHEET www.onsemi.com Operational Amplifier, Rail-to-Rail, Low Input Bias Current, 1.8 V to 5 V Single-Supply SC70−5 SQ SUFFIX CASE 419A STYLES 3 LMV301 MARKING DIAGRAM The LMV301 CMOS operational amplifier can operate over a power supply range from 1.8 V to 5 V and has a quiescent current of less than 200 mA, maximum, making it ideal for portable battery−operated applications such as notebook computers, PDA’s and medical equipment. Low input bias current and high input impedance make it highly tolerant of high source−impedance signal−sources such as photodiodes and pH probes. In addition, the LMV301’s excellent rail−to−rail performance will enhance the signal−to−noise performance of any application together with an output stage capable of easily driving a 600 W resistive load and up to 1000 pF capacitive load. Features • • • • • • • Single Supply Operation (or $VS/2) VS from 1.8 V to 5 V Low Quiescent Current: 185 mA, Max with VS = 1.8 V Rail−to−Rail Output Swing Low Bias Current: 35 pA, max No Output Phase−Reversal when the Inputs are Overdriven These are Pb−Free Devices Typical Applications • • • • • • • • Portable Battery−Powered Instruments Notebook Computers and PDAs Cell Phones and Mobile Communication Digital Cameras Photodiode Amplifiers Transducer Amplifiers Medical Instrumentation Consumer Products © Semiconductor Components Industries, LLC, 2011 October, 2021 − Rev. 4 AAD MG G LMV301 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. PIN CONNECTION +IN 1 VEE 2 −IN 3 5 VCC 4 OUTPUT + − STYLE 3 PINOUT ORDERING INFORMATION See detailed ordering and shipping information in the dimensions section on page 11 of this data sheet. 1 Publication Order Number: LMV301/D LMV301 MAXIMUM RATINGS Symbol VS Rating Power Supply (Operating Voltage Range VS = 1.8 V to 5.0 V) Value Unit 5.5 V VIDR Input Differential Voltage ±Supply Voltage V VICR Input Common Mode Voltage Range −0.5 to (V+) + 0.5 V 10 mA Maximum Input Current tSo Output Short Circuit (Note 1) Continuous TJ Maximum Junction Temperature (Operating Range −40°C to 85°C) 150 °C JA Thermal Resistance (5−Pin SC70−5) 280 °C/W Tstg Storage Temperature −65 to 150 °C VESD Mounting Temperature (Infrared or Convection (30 sec)) 260 ESD Tolerance Machine Model Human Body Model 100 1500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Continuous short−circuit to ground operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Also, shorting output to V+ will adversely affect reliability; likewise shorting output to V− will adversely affect reliability. www.onsemi.com 2 LMV301 1.8 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, VCC = 1.8 V, RL = 1 MW, VEE = 0 V, VO = VCC/2) Parameter Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current (Note 2) Symbol Condition VIO TCVIO Min Typ Max Unit TA = −40°C to +85°C 1.7 9 mV TA = −40°C to +85°C 5 IB 3 TA = −40°C to +85°C mV/°C 35 pA 50 Common Mode Rejection Ratio CMRR 0 V v VCM v 0.9 V 50 63 dB Power Supply Rejection Ratio PSRR 1.8 V v VCC v 5 V, VO = 1 V, VCM = 1 V 62 100 dB Input Common−Mode Voltage Range VCM For CMRR ≥ 50 dB 0 to 0.9 −0.2 to 0.9 V 100 dB Large Signal Voltage Gain (Note 2) AV RL = 600W 83 TA = −40°C to +85°C 80 RL = 2 kW 83 TA = −40°C to +85°C 80 VOH RL = 600 W to 0.9 V TA = −40°C to +85°C 1.65 1.63 VOL RL = 600 W to 0.9 V TA = −40°C to +85°C VOH RL = 2 kW to 0.9 V TA = −40°C to +85°C VOL RL = 2 kW to 0.9 V TA = −40°C to +85°C Output Short Circuit Current (Note 2) IO Sourcing = VO = 0 V Sinking = VO = 1.8 V Supply Current ICC TA = −40°C to +85°C Output Swing 100 V 75 1.5 1.4 1.76 25 10 20 100 120 mV V 35 40 60 160 mV mA 185 mA 1.8 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, VCC = 1.8 V, RL = 1 MW, VEE = 0 V, VO = VCC/2) Parameter Symbol Gain Bandwidth Product GBWP Slew Rate Condition SR CL = 200 pF Min Typ Max Unit 1 V/ms 1 MHz Phase Margin Qm 60 ° Gain Margin Gm 10 dB Input−Referred Voltage Noise en f = 50 kHz 50 nV/√Hz THD AV = +1, V − 1 VPP, RL = 10 kW, f = 1 kHz 0.01 % Total Harmonic Distortion 2. Guaranteed by design and/or characterization. www.onsemi.com 3 LMV301 2.7 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, VCC = 2.7 V, RL = 1 MW, VEE = 0 V, VO = VCC/2) Parameter Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current (Note 2) Symbol Condition VIO TCVIO Min Typ Max Unit TA = −40°C to +85°C 1.7 9 mV TA = −40°C to +85°C 5 IB 3 TA = −40°C to +85°C mV/°C 35 pA 50 Common Mode Rejection Ratio CMRR 0 V v VCM v 1.35 V 50 63 dB Power Supply Rejection Ratio PSRR 1.8 V v VCC v 5 V, VO = 1 V, VCM = 1 V 62 100 dB Input Common−Mode Voltage Range VCM For CMRR ≥ 50 dB 0 to 1.35 −0.2 to1.35 V 100 dB Large Signal Voltage Gain (Note 2) AV RL = 600 W 83 TA = −40°C to +85°C 80 RL = 2 kW 83 TA = −40°C to +85°C 80 VOH RL = 600 W to 1.35 V TA = −40°C to +85°C 2.55 2.53 VOL RL = 600 W to 1.35 V TA = −40°C to +85°C VOH RL = 2 kW to 1.35 V TA = −40°C to +85°C VOL RL = 2 kW to 1.35 V TA = −40°C to +85°C Output Short Circuit Current (Note 2) IO Sourcing = VO = 0 V Sinking = VO = 2.7 V Supply Current ICC TA = −40°C to +85°C Output Swing 100 2.62 78 2.65 2.64 100 280 2.675 75 10 20 V mV V 100 110 60 160 mV mA 185 mA 2.7 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, VCC = 2.7 V, RL = 1 MW, VEE = 0 V, VO = VCC/2) Parameter Symbol Gain Bandwidth Product GBWP Slew Rate Condition SR CL = 200 pF Min Typ Max Unit 1 V/ms 1 MHz Phase Margin Qm 60 ° Gain Margin Gm 10 dB Input−Referred Voltage Noise en f = 50 kHz 50 nV/√Hz THD AV = +1, V − 1 VPP, RL = 10 kW, f = 1 kHz 0.01 % Total Harmonic Distortion 2. Guaranteed by design and/or characterization. www.onsemi.com 4 LMV301 5.0 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, VCC = 5.0 V, RL = 1 MW, VEE = 0 V, VO = VCC/2) Parameter Input Offset Voltage Input Offset Voltage Average Drift Input Bias Current (Note 2) Symbol Condition VIO TCVIO Min Typ Max Unit TA = −40°C to +85°C 1.7 9 mV TA = −40°C to +85°C 5 IB 3 TA = −40°C to +85°C mV/°C 35 pA 50 Common Mode Rejection Ratio CMRR 0 V v VCM v 4 V 50 63 dB Power Supply Rejection Ratio PSRR 1.8 V v VCC v 5 V, VO = 1 V, VCM = 1 V 62 100 dB Input Common−Mode Voltage Range VCM For CMRR ≥ 50 dB 0 to 4 −0.2 to 4.2 V 100 dB Large Signal Voltage Gain (Note 2) AV RL = 600 W 83 TA = −40°C to +85°C 80 RL = 2 kW 83 TA = −40°C to +85°C 80 VOH RL = 600 W to 2.5 V TA = −40°C to +85°C 4.850 4.840 VOL RL = 600 W to 2.5 V TA = −40°C to +85°C VOH RL = 2 kW to 2.5 V TA = −40°C to +85°C VOL RL = 2 kW to 2.5 V TA = −40°C to +85°C Output Short Circuit Current (Note 2) IO Sourcing = VO = 0 V Sinking = VO = 5 V Supply Current ICC TA = −40°C to +85°C Output Swing 100 V 150 160 4.935 4.900 V 65 75 10 10 mV 60 160 mV mA 200 µA 5.0 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, VCC = 5.0 V, RL = 1 MW, VEE = 0 V, VO = VCC/2) Parameter Symbol Gain Bandwidth Product GBWP Slew Rate Condition SR CL = 200 pF Min Typ Max Unit 1 V/ms 1 MHz Phase Margin Qm 60 ° Gain Margin Gm 10 dB Input−Referred Voltage Noise en f = 50 kHz 50 nV/√Hz THD AV = +1, V − 1 VPP, RL = 10 kW, f = 1 kHz 0.01 % Total Harmonic Distortion 2. Guaranteed by design and/or characterization. www.onsemi.com 5 LMV301 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 100 40 90 PHASE MARGIN (°) 50 GAIN (dB) 30 20 10 Over −40°C to +85°C Same Gain $1.8 dB (Typ) 0 70 60 50 −10 10k 80 100k 1M FREQUENCY (Hz) 40 10M 10k 90 75 80 70 70 65 60 60 CMRR (dB) CMRR (dB) 80 50 40 55 45 20 40 10 35 10k 30 −0.5 100k VS = 2.7 V f = 10 kHz 50 30 1k 10M Figure 2. Open Loop Phase Margin (RL = 2 kW, TA = 255C) 100 100 1M FREQUENCY (Hz) Figure 1. Open Loop Frequency Response (RL = 2 kW, TA = 255C, VS = 5 V) 0 10 100k 0 0.5 1 1.5 2 2.5 FREQUENCY (Hz) INPUT COMMON MODE VOLTAGE (V) Figure 3. CMRR vs. Frequency (RL = 5 kW, VS = 5 V) Figure 4. CMRR vs. Input Common Mode Voltage 80 3 100 90 70 80 60 PSRR (dB) CMRR (dB) 70 VS = 5 V f = 10 kHz 50 60 50 40 30 20 40 10 30 −1 0 1 2 3 4 0 1k 5 10k 100k 1M INPUT COMMON MODE VOLTAGE (V) FREQUENCY (Hz) Figure 5. CMRR vs. Input Common Mode Voltage Figure 6. PSRR vs. Frequency (RL = 5 kW, VS = 2.7 V, +PSRR) www.onsemi.com 6 10M LMV301 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 90 100 80 90 70 80 70 60 PSRR (dB) PSRR (dB) 60 50 40 30 50 40 30 20 20 10 10 0 1k 10k 100k 1M 0 1k 10M 10k FREQUENCY (Hz) 90 80 4 70 3.5 60 3 VOS (mV) PSRR (dB) 5 4.5 50 40 2.5 2 30 1.5 20 1 10 0.5 10k 100k 1M 0 10M VS = 2.7 V 0 0.5 FREQUENCY (Hz) 100 90 QUIESCENT CURRENT (mA) 5 4 VOS (mV) 3.5 3 2.5 2 1.5 VS = 5.0 V 0.5 0 0.5 1 1.5 2 2.5 3 1.5 2 2.5 3 Figure 10. VOS vs CMR 4.5 0 1 VCM (V) Figure 9. PSRR vs. Frequency (RL = 5 kW, VS = 5 V, −PSRR) 1 10M Figure 8. PSRR vs. Frequency (RL = 5 kW, VS = 5 V, +PSRR) 100 1k 1M FREQUENCY (Hz) Figure 7. PSRR vs. Frequency (RL = 5 kW, VS = 2.7 V, −PSRR) 0 100k 3.5 4 4.5 80 70 60 50 40 30 20 10 0 5 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 VCM (V) SUPPLY VOLTAGE (V) Figure 11. VOS vs CMR Figure 12. Supply Current vs. Supply Voltage www.onsemi.com 7 5 LMV301 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 1 0 VOUT REFERENCED TO V+ (V) RL = 10 kW Vout = 1 VPP Av = +1 (%) 0.1 0.01 100 1k 10k −0.03 −0.04 −0.05 −0.06 −0.07 −0.08 −0.09 −0.1 2.5 4.5 5 Figure 14. Output Voltage Swing vs Supply Voltage (RL = 10k) −20 0.08 0.07 0.06 0.05 0.04 0.03 0.02 3 3.5 4 SUPPLY VOLTAGE (V) −60 −80 −100 −120 −140 Negative Swing 0.01 −40 4.5 −160 5 0 −20 100 SOURCE CURRENT (mA) 120 −40 −60 −80 −100 2 3 4 1 1.5 2 2.5 Figure 16. Sink Current vs. Output Voltage VS = 2.7 V 0 1 0.5 VOUT REFERENCED TO V− (V) Figure 15. Output Voltage Swing vs Supply Voltage (RL = 10k) SINK CURRENT (mA) 4 Figure 13. THD+N vs Frequency 0.09 0 3.5 SUPPLY VOLTAGE (V) 0 −120 3 (Hz) 0.1 0 2.5 Positive Swing −0.02 100k SINK CURRENT (mA) VOUT REFERENCED TO V− (V) 0.001 10 −0.01 80 60 40 20 0 5 VOUT REFERENCED TO V− (V) 0 0.5 1.0 1.5 2.0 VOUT REFERENCED TO V+ (V) Figure 17. Sink Current vs. Output Voltage VS = 5.0 V Figure 18. Source Current vs. Output Voltage VS = 2.7 V www.onsemi.com 8 2.5 LMV301 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 110 RL = 2 kW AV = 1 50 mV/div 2 ms/div SOURCE CURRENT (mA) 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 VOUT REFERENCED TO V+ (V) 5 Figure 19. Source Current vs. Output Voltage VS = 5.0 V Figure 20. Settling Time vs. Capacitive Load 50 mV/div 2 ms/div RL = 1 MW AV = 1 50 mV/div 2 ms/div Non−Inverting (G = +1) Input Output Figure 21. Settling Time vs. Capacitive Load Figure 22. Step Response − Small Signal 50 mV/div 2 ms/div 1 V/div 2 ms/div Non−Inverting (G = +1) Inverting (G = −1) Input Input Output Output Figure 24. Step Response − Large Signal Figure 23. Step Response − Small Signal www.onsemi.com 9 LMV301 TYPICAL CHARACTERISTICS (TA = 25°C and VS = 5 V unless otherwise specified) 1 V/div 2 ms/div Inverting (G = −1) Input Output Figure 25. Step Response − Large Signal www.onsemi.com 10 LMV301 APPLICATIONS 50 k R1 5.0 k VCC VCC R2 10 k MC1403 2.5 V VO LMV301 VO LMV301 VCC − Vref − + + 1 V ref + V CC 2 R1 V O + 2.5 V(1 ) ) R2 R R Figure 26. Voltage Reference fO + For: fo = 1.0 kHz R = 16 kW C = 0.01 mF C C 1 2pRC Figure 27. Wien Bridge Oscillator VCC C R1 Vin R2 C R3 − Hysteresis R1 LMV301 − Vin VO VOL CO = 10 C Vref VO + VO + R2 VOH Vref CO LMV301 VinL Given: fo = center frequency A(fo) = gain at center frequency VinH Choose value fo, C Q Then : R3 + pf O C Vref R1 (V OL * V ref) ) V ref R1 ) R2 R1 V inH + (V OH * V ref) ) V ref R1 ) R2 R1 H+ (V OH * V OL) R1 ) R2 V inL + R1 + R2 + R3 2 A(f O) R1 R3 4Q 2 R1 * R3 Figure 28. Comparator with Hysteresis For less than 10% error from operational amplifier, ((QO fO)/BW) < 0.1 where fo and BW are expressed in Hz. If source impedance varies, filter may be preceded with voltage follower buffer to stabilize filter parameters. Figure 29. Multiple Feedback Bandpass Filter ORDERING INFORMATION Device LMV301SQ3T2G Pinout Style Marking Package Shipping† Style 3 AAD SC70−5 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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