MBRS2040LT3

MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS Mechanical Characteristics: • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 95 mg (approximately) Maximum Temperature of 260°C / 10 Seconds for Soldering Cathode Polarity Band Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3” Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: BKJL SMB CASE 403A PLASTIC MARKING DIAGRAM BKJL BKJL = Device Code MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 103°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 104°C) IFRM 4.0 A MBRS2040LT3G Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 70 A †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Tstg, TC −55 to +150 °C TJ −55 to +125 °C dv/dt 10,000 V/s Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C)  Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 3 332 ORDERING INFORMATION Device Package Shipping† MBRS2040LT3 SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel Publication Order Number: MBRS2040LT3/D MBRS2040LT3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction−to−Lead (Note 1.) Thermal Resistance — Junction−to−Ambient (Note 2.) Symbol Value Unit RθJL RθJA 22.5 78 °C/W ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3 3.)) see Figure 2 (IF = 2.0 A) (IF = 4.0 A) IR Maximum Instantaneous Reverse Current (Note 3 3.)) (VR = 40 V) (VR = 20 V) 1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. see Figure 4 http://onsemi.com 333 TJ = 25°C TJ = 125°C 0.43 0.50 0.34 0.45 TJ = 25°C TJ = 100°C 0.8 0.1 20 6.0 Volts mA 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRS2040LT3 100 10 TJ = 100°C 1.0 TJ = 25°C TJ = 125°C TJ = −40°C 0.1 0 0.2 0.4 0.6 0.8 TJ = 25°C TJ = 100°C 0.1 0 0.2 0.4 0.6 0.8 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 I R, MAXIMUM REVERSE CURRENT (AMPS) I R, REVERSE CURRENT (AMPS) TJ = 125°C 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E−3 TJ = 125°C TJ = 100°C 1.0E−3 100E−6 TJ = 125°C 10E−3 TJ = 100°C 1.0E−3 100E−6 TJ = 25°C 10E−6 1.0E−6 TJ = 25°C 10E−6 1.0E−6 0 10 3.5 20 40 30 30 40 Figure 4. Maximum Reverse Current SQUARE WAVE Ipk/Io =  1.5 Ipk/Io = 5 1.0 Ipk/Io = 10 0.5 Ipk/Io = 20 0 20 20 Figure 3. Typical Reverse Current 3.0 2.0 10 VR, REVERSE VOLTAGE (VOLTS) dc 2.5 0 VR, REVERSE VOLTAGE (VOLTS) PFO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 0 100 40 60 80 100 120 140 1.2 SQUARE WAVE 1.0 Ipk/Io =  dc 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 0.5 1.0 1.5 2.0 2.5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 334 3.0 MBRS2040LT3 TJ , DERATED OPERATING TEMPERATURE ( °C) C, CAPACITANCE (pF) 1000 TJ = 25°C 100 10 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 5.0 10 15 20 25 30 35 125 Rtja = 22.5°C/W 115 105 40 95 42°C/W 61°C/W 85 78°C/W 75 92°C/W 65 5.0 0 10 15 20 30 25 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0 50% 20% 10% 0.1 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 1.0 0.1 10 100 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 0.1 20% 10% 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient http://onsemi.com 335 10 100 1,000