MC74VHC257
Quad 2-Channel Multiplexer
with 3-State Outputs
The MC74VHC257 is an advanced high speed CMOS quad
2−channel multiplexer fabricated with silicon gate CMOS technology.
It achieves high speed operation similar to equivalent Bipolar
Schottky TTL while maintaining CMOS low power dissipation.
It consists of four 2−input digital multiplexers with common select
(S) and enable (OE) inputs. When (OE) is held High, selection of data
is inhibited and all the outputs go Low.
The select decoding determines whether the A or B inputs get routed
to the corresponding Y outputs.
The inputs tolerate voltages up to 7 V, allowing the interface of 5 V
systems to 3 V systems.
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 4.1 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: FETs = 100; Equivalent Gates = 25
These Devices are Pb−Free and are RoHS Compliant
S
1
16
VCC
A0
2
15
OE
B0
3
14
Y0
4
A1
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MARKING DIAGRAMS
16
9
VHC257G
AWLYWW
SO−16
D SUFFIX
CASE 751B
1
8
16
9
VHC
257
ALYWG
G
TSSOP−16
DT SUFFIX
CASE 948F
1
A
L, WL
Y, YY
W, WW
G or G
8
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MC74VHC257DG
SO−16
48 Units/Rail
A3
MC74VHC257DR2G
SO−16
2500 Units/Reel
13
B3
MC74VHC257DTG
TSSOP−16
96 Units/Rail
5
12
Y3
B1
6
11
A2
Y1
7
10
B2
GND
8
9
Y2
MC74VHC257DTR2G TSSOP−16 2500 Units/Reel
Figure 1. Pin Assignment
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 6
1
Publication Order Number:
MC74VHC257/D
MC74VHC257
OE
I0a
I1a
I0b
Za
I1b
I0c
Zb
I1c
I0d
Zc
I1d
S
Zd
Figure 2. Expanded Logic Diagram
OE
S
A0
B0
A1
B1
A2
B2
A3
B3
15
1
2
3
5
6
EN
G1
1
1
MUX
4
7
11
10
14
13
9
12
Y0
Y1
Y2
Y3
Figure 3. IEC Logic Symbol
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
FUNCTION TABLE
Inputs
OE
S
Outputs
Y0 − Y3
H
X
Z
L
L
A0 −A3
L
H
B0 −B3
A0 − A3, B0 − B3 = the levels
of the respective Data−Word
Inputs.
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2
MC74VHC257
MAXIMUM RATINGS
Value
Unit
VCC
Symbol
Positive DC Supply Voltage
Parameter
−0.5 to +7.0
V
VIN
Digital Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
−0.5 to VCC +0.5
V
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
$20
mA
IOUT
DC Output Current, per Pin
$25
mA
ICC
DC Supply Current, VCC and GND Pins
$75
mA
PD
Power Dissipation in Still Air
200
180
mW
TSTG
Storage Temperature Range
−65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
>2000
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
$300
mA
qJA
Thermal Resistance, Junction−to−Ambient
143
164
°C/W
SOIC Package
TSSOP
SOIC Package
TSSOP
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1 Tested to EIA/JESD22−A114−A
2 Tested to EIA/JESD22−A115−A
3 Tested to JESD22−C101−A
4 Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
2.0
5.5
V
VCC
DC Supply Voltage
VIN
DC Input Voltage
0
5.5
V
VOUT
DC Output Voltage
0
VCC
V
TA
Operating Temperature Range, all Package Types
−55
125
°C
tr, tf
Input Rise or Fall Time
0
100
20
ns/V
VCC = 3.3 V + 0.3 V
VCC = 5.0 V + 0.5 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
419,300
TJ = 90 ° C
1,032,200
90
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 4. Failure Rate vs. Time Junction Temperature
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3
MC74VHC257
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
VIH
VIL
Parameter
Condition
Minimum High−Level
Input Voltage
Maximum Low−Level
Input Voltage
VOH
Maximum High−Level
Output Voltage
VIN = VIH or VIL
IOH = −50 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOH = 4 mA
IOH = 8 mA
(V)
TA ≤ 85°C
TA = 25°C
Min
Typ
Max
Min
−55°C ≤ TA ≤ 125°C
Max
Min
2.0
1.5
1.5
1.5
1.5
3.0 to
5.5
VCCX
0.7
VCCX
0.7
VCCX
0.7
VCCX
0.7
Max
V
2.0
0.5
0.5
0.5
3.0 to
5.5
VCCX
0.3
VCCX
0.3
VCCX
0.3
2.0
3.0
4.5
1.9
2.9
4.4
3.0
4.5
2.58
3.94
2.0
3.0
4.5
2.0
3.0
4.5
0.0
0.0
0.0
1.9
2.9
4.4
1.9
2.9
4.4
2.48
3.8
2.34
3.66
Unit
V
V
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
IIN
Input Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
IOZ
Maximum 3−State
Leakage Current
VIN = VIH or VIL
5.5
±0.25
±2.5
±2.5
mA
Maximum Quiescent
Supply Current
(per package)
VIN = VCC or GND
5.5
4.0
40.0
40.0
mA
ICC
VOUT = VCC or GND
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎ
Î
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = ≤ 85°C
TA = 25°C
Symbol
tPLH,
tPHL
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
CIN
Typ
Max
Min
Max
Min
Max
Unit
Maximum Propagation
Delay
A or B to Y
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
5.8
8.3
9.3
12.8
1.0
1.0
11.0
14.5
1.0
1.0
11.0
14.5
ns
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
3.6
5.1
5.9
7.9
1.0
1.0
7.0
9.0
1.0
1.0
7.0
9.0
Maximum Propagation
Delay
S to Y
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
7.0
9.5
11.0
14.5
1.0
1.0
13.0
16.5
1.0
1.0
13.0
16.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
4.0
5.5
6.8
8.8
1.0
1.0
8.0
10.0
1.0
1.0
8.0
10.0
Maximum Output Enable
Time
OE to Y
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
6.7
9.2
10.5
14.0
1.0
1.0
12.5
16.0
1.0
1.0
12.5
16.0
VCC = 5.0 ± 0.5 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
3.6
5.1
6.8
8.8
1.0
1.0
8.0
10.0
1.0
1.0
8.0
10.0
Maximum Output Disable
Time
OE to Y
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 50 pF
12.0
15.0
1.0
16.0
1.0
17.5
VCC = 5.0 ± 0.5 V
RL = 1 kW
CL = 50 pF
5.7
13.0
1.0
14.0
1.0
15.0
4
10
Parameter
Min
−55°C ≤ TA ≤ 125°C
Test Conditions
Maximum Input
Capacitance
10
10
ns
ns
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD
20
Power Dissipation Capacitance (Note 5)
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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4
MC74VHC257
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
− 0.3
− 0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
VCC
OE
50%
GND
VCC
A, B or S
50%
tPLH
Y
tPZL
GND
tPHL
tPLZ
50% VCC
Y
tPZH
50% VCC
VOH - 0.3V
HIGH
IMPEDANCE
Figure 6. Switching Waveform
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
VOL + 0.3V
tPHZ
50% VCC
Y
Figure 5. Switching Waveform
HIGH
IMPEDANCE
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
OUTPUT
1 kΩ
CL *
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
Figure 7. Test Circuit
Figure 8. Test Circuit
INPUT
Figure 9. Input Equivalent Circuit
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
DATE 29 DEC 2006
SCALE 1:1
−A−
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
16 PL
0.25 (0.010)
M
T B
S
A
S
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
COLLECTOR
BASE
EMITTER
NO CONNECTION
EMITTER
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
CATHODE
ANODE
NO CONNECTION
CATHODE
CATHODE
NO CONNECTION
ANODE
CATHODE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
COLLECTOR, DYE #1
BASE, #1
EMITTER, #1
COLLECTOR, #1
COLLECTOR, #2
BASE, #2
EMITTER, #2
COLLECTOR, #2
COLLECTOR, #3
BASE, #3
EMITTER, #3
COLLECTOR, #3
COLLECTOR, #4
BASE, #4
EMITTER, #4
COLLECTOR, #4
STYLE 4:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
STYLE 5:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
DRAIN, DYE #1
DRAIN, #1
DRAIN, #2
DRAIN, #2
DRAIN, #3
DRAIN, #3
DRAIN, #4
DRAIN, #4
GATE, #4
SOURCE, #4
GATE, #3
SOURCE, #3
GATE, #2
SOURCE, #2
GATE, #1
SOURCE, #1
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
ANODE
STYLE 7:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
SOURCE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE P‐CH
SOURCE P‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
GATE N‐CH
COMMON DRAIN (OUTPUT)
COMMON DRAIN (OUTPUT)
SOURCE N‐CH
COLLECTOR, DYE #1
COLLECTOR, #1
COLLECTOR, #2
COLLECTOR, #2
COLLECTOR, #3
COLLECTOR, #3
COLLECTOR, #4
COLLECTOR, #4
BASE, #4
EMITTER, #4
BASE, #3
EMITTER, #3
BASE, #2
EMITTER, #2
BASE, #1
EMITTER, #1
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42566B
SOIC−16
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16
DATE 19 OCT 2006
1
SCALE 2:1
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
S
V
S
K
S
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT
7.06
16
XXXX
XXXX
ALYW
1
1
0.65
PITCH
16X
0.36
DOCUMENT NUMBER:
DESCRIPTION:
16X
1.26
98ASH70247A
TSSOP−16
DIMENSIONS: MILLIMETERS
XXXX
A
L
Y
W
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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