MMBT6589T1G

MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −30 −50 −5.0 −1.0 −2.0 Unit Vdc Vdc Vdc Adc A 30 VOLTS, 2.0 AMPS PNP TRANSISTOR COLLECTOR 1, 2, 5 3 BASE 6 EMITTER 3 4 HBM Class 3 MM Class C 2 1 5 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) PDsingle (Note 2) (Note 3) TJ, Tstg Max 540 4.4 230 925 7.4 135 1.3 Unit mW mW/°C °C/W mW mW/°C °C/W 1 W TSOP−6 CASE 318G STYLE 7 MARKING DIAGRAM G3 M G G −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 G3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6589T1 MMBT6589T1G Package TSOP−6 TSOP−6 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 1 Publication Order Number: MMBT6589T1/D MMBT6589T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCES = −30 Vdc) Emitter Cutoff Current (VEB = −4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (Figure 1) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = 2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (Figure 3) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = 0.1 A) (IC = −2.0 A, IB = −0.2 A) Base −Emitter Saturation Voltage (Note 4) (Figure 2) (IC = −1.0 A, IB = −0.1 A) Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Output Capacitance (VCB = −5.0 V, f = 1.0 MHz) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% hFE 100 100 80 40 VCE(sat) − − − VBE(sat) − VBE(on) − fT 100 Cobo − − 20 pF −1.1 MHz −1.2 V −0.25 −0.30 −0.65 V − 300 − − V V(BR)CEO −30 V(BR)CBO −50 V(BR)EBO −5.0 ICBO − ICES − IEBO − −0.1 −0.1 mAdc −0.1 mAdc − mAdc − Vdc − Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 MMBT6589T1 200 VCE = −2.0 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 150 230 210 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 50 1.0 10 −55°C 25°C 125°C VCE = −1.0 V 100 50 100 1000 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 1000 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Figure 2. DC Current Gain versus Collector Current IC/IB = 10 IC/IB = 100 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100 1000 IB, BASE CURRENT (mA) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 MMBT6589T1 10 IC , COLLECTOR CURRENT (AMPS) 1 s 100 ms 10 ms 1.0 DC 0.1 1 ms 100 ms 0.01 SINGLE PULSE AT Tamb = 25°C 0.1 1.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response http://onsemi.com 4 MMBT6589T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P D 6 5 1 2 4 3 HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 7: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. N/C 5. COLLECTOR 6. EMITTER SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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