MPSW13RLRA

MPSW13 One Watt Darlington Transistor NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20 −55 to +150 Unit Vdc Vdc Vdc Adc W mW/°C W mW/°C °C 1 2 EMITTER 1 TO−92 (TO−226) CASE 29−10 STYLE 1 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W MPS W13 AYWW G G MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPSW13 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSW13RLRA MPSW13RLRAG Package TO−92 TO−92 (Pb−Free) Shipping † 2,000/Tape & Reel 2,000/Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPSW13/D 1 February, 2006 − Rev. 4 MPSW13 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base−Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = |hfe| • ftest. fT 125 − MHz hFE 5,000 10,000 VCE(sat) VBE(on) − − − − 1.5 2.0 Vdc Vdc − V(BR)CES ICBO IEBO 30 − − − 100 100 Vdc nAdc nAdc Symbol Min Max Unit I C , COLLECTOR CURRENT (mA) 3.0 k 2.0 k CURRENT LIMIT DUTY CYCLE ≤ 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 ms 1.0 ms 1.0 k 1.0 s 500 TA = 25°C 200 1.5 TC = 25°C 2.0 5.0 10 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. Active Region − Safe Operating Area http://onsemi.com 2 MPSW13 TJ = 125°C VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k −55°C VCE = 5.0 V 3.0 2.5 2.0 1.5 1.0 0.5 0.1 IC = 10 mA IC = 50 mA IC = 250 mA IC = 500 mA TJ = 25°C h FE , DC CURRENT GAIN 25°C 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 500 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 2. DC Current Gain Figure 3. Collector Saturation Region q V , TEMPERATURE COEFFICIENTS (mV/° C) 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 1.0 0.8 0.6 VBE(on) @ VCE = 5.0 V −1.0 −2.0 −3.0 −4.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *qVC FOR VCE(sat) 25°C TO 125°C −55°C TO 25°C 25°C TO 125°C qVB FOR VBE VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 500 −5.0 −6.0 −55°C TO 25°C 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. “ON” Voltages Figure 5. Temperature Coefficients 4.0 h FE , SMALL−SIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25°C f = 100 MHz 20 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 Cobo Cibo 2.0 1.0 0.8 0.6 0.4 0.2 3.0 2.0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. High Frequency Current Gain Figure 7. Capacitance http://onsemi.com 3 MPSW13 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A R P F L B SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− K XX G H R 123 D J SECTION X−X NC N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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