MPSW92

ON Semiconductort One Watt High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –300 –300 –5.0 –500 1.0 8.0 2.5 20 –55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW92 ON Semiconductor Preferred Device 1 2 3 CASE 29–10, STYLE 1 TO–92 (TO–226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –300 –300 –5.0 — — — — — –0.25 –0.1 Vdc Vdc Vdc µAdc µAdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 March, 2001 – Rev. 2 Publication Order Number: MPSW92/D MPSW92 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) Collector–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) — — — — — –0.5 –0.9 Vdc Vdc — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = –20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT Ccb 50 — — 6.0 MHz pF http://onsemi.com 2 MPSW92 300 250 hFE , DC CURRENT GAIN 200 150 100 50 0 -55°C TJ = +125°C VCE = 10 Vdc 25°C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Cib @ 1MHz BANDWIDTH (MHz) f T, CURRENT-GAIN 100 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Current–Gain — Bandwidth VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V Figure 4. ”ON” Voltages http://onsemi.com 3 MPSW92 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- R P F L B SEATING PLANE K XX G H R 123 D J SECTION X–X NC N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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