September 1996
NDT451N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V.
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and
provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
___________________________________________________________________________________________________________
D
G
Absolute Maximum Ratings
Symbol
D
D
S
G
S
T A = 25°C unless otherwise noted
Parameter
NDT451N
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
±5.5
A
PD
Maximum Power Dissipation
- Continuous
(Note 1a)
- Pulsed
±25
(Note 1a)
3
(Note 1b)
1.3
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
W
1.1
-65 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT451N Rev. C2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
30
V
TJ = 55°C
2
µA
20
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
-100
nA
3
V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 5.5 A
1
TJ = 125°C
0.7
TJ = 125°C
VGS = 4.5 V, ID = 4.3 A
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VGS = 10 V, VDS = 5 V
18
VGS = 4.5 V, VDS = 5 V
15
1.6
1.2
2.2
0.042
0.05
0.065
0.1
0.064
0.08
Ω
A
VDS = 10 V, ID = 5.5 A
6
S
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
730
pF
370
pF
140
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 15 V, ID = 1.0 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 10 V,
ID = 5.5 A, VGS = 10 V
20
30
ns
15
25
ns
19
40
ns
10
30
ns
16
25
nC
1.8
3
nC
4.5
7
nC
NDT451N Rev. C2
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
2.5
A
1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5.5 A
0.8
(Note 2)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD( t) =
T J−TA
R θJ A(t )
=
T J−TA
R θJ C+RθCA(t )
= I 2D (t ) × RDS(ON )
TJ
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.
b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT451N Rev. C2
Typical Electrical Characteristics
3
18
6.0 5.0
4.5
V
R DS(on), NORMALIZED
4.0
12
3.5
6
3.0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS = 10V
0
0
1
2
V DS , DRAIN-SOURCE VOLTAGE (V)
GS
4.0V
2
4.5V
6.0V
0
3
6
9
12
I D , DRAIN CURRENT (A)
15
18
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
V GS = 10 V
I D = 5.5A
1.4
R DS(on) , NORMALIZED
VGS = 10V
1.2
1
0.8
0.6
-50
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
10V
1
1.6
DRAIN-SOURCE ON-RESISTANCE (OHMS)
5.0V
1.5
0.5
3
Figure 1. On-Region Characteristics.
1.75
TJ = 125°C
1.5
1.25
25°C
1
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
-55°C
0.75
0.5
-25
150
0
3
6
9
12
15
18
I , DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
TJ = -55°C
25
V DS = 10V
125
Vth , NORMALIZED
8
6
4
2
0
1
1.5
2
2.5
3
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
4
GATE-SOURCE THRESHOLD VOLTAGE (V)
10
ID , DRAIN CURRENT (A)
= 3.5V
2.5
VDS = VGS
1.1
I D = 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
NDT451N Rev. C2
Typical Electrical Characteristics (continued)
10
I D = 250µA
1.05
1
0.95
0.9
-50
-25
V GS = 0V
5
1.1
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
1.15
0
TJ
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
2
T J = 125°C
1
0.5
25°C
0.2
-55°C
0.1
0.05
0.02
0.01
0.2
150
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 7. Breakdown Voltage Variation with
Temperature.
10
2000
CAPACITANCE (pF)
1000
VGS , GATE-SOURCE VOLTAGE (V)
ID = 5.5A
C iss
500
C oss
200
100
50
0.1
C rss
f = 1 MHz
V GS = 0V
VDS = 10V
8
6
4
2
0
0.2
0.5
V
DS
1
2
5
10
20
0
30
4
t on
t d(on)
t off
tr
RL
t d(off)
tf
90%
90%
V OUT
D
VOUT
R GEN
10%
10%
DUT
G
16
Figure 10. Gate Charge Characteristics.
VDD
V IN
12
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
VGS
8
, DRAIN TO SOURCE VOLTAGE (V)
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT451N Rev. C2
Typical Electrical Characteristics (continued)
12
40
20
T J = -55°C
10
10
I D , DRAIN CURRENT (A)
5
25°C
8
6
125°C
4
RD
S(
)
ON
Lim
10
0
1m us
s
it
10
10
0m
1s
10
s
DC
1
0.5
ms
s
V GS = 10V
0.1
SINGLE PULSE
2
0.05
R θJ A = 42 o C/W
0
0.01
0.1
T A = 25°C
g
FS
, TRANSCONDUCTANCE (SIEMENS)
V DS = 1 0 V
0
2
4
6
8
10
0.2
0.5
I D , DRAIN CURRENT (A)
1
2
5
10
30
50
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
0.01
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1 c
θ
P(pk)
0.01
t1
0.005
(t)
θJA
Duty Cycle, D = t 1 / t 2
Single Pulse
0.002
0.001
0.0001
t2
TJ - TA = P * R
0.001
0.01
0.1
t 1 , TIME (sec)
1
10
100
300
Figure 15. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDT451N Rev. C2
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging
Configuration: Figure 1.0
Customized Label
Packaging Description:
F63TNR Label
Antistatic Cover Tape
SOT-223 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F852
014
F852
014
F852
014
F852
014
SOT-223 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
2,500
D84Z
SOT-223 Unit Orientation
TNR
500
13" Dia
7" Dia
343x64x343
184x187x47
Max qty per Box
5,000
1,000
Weight per unit (gm)
0.1246
0.1246
Weight per Reel (kg)
0.7250
0.1532
343mm x 342mm x 64mm
Intermediate box for Standard
F63TNR Label
Note/Comments
F63TNR Label
F63TNR Label sample
184mm x 184mm x 47mm
Pizza Box for D84Z Option
SOT-223 Tape Leader and Trailer
Configuration: Figure 2.0
LOT: CBVK741B019
QTY: 3000
FSID: PN2222A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
Components
Trailer Tape
300mm minimum or
38 empty pockets
Leader Tape
500mm minimum or
62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-223
(12mm)
A0
6.83
+/-0.10
B0
7.42
+/-0.10
W
12.0
+/-0.3
D0
D1
1.55
+/-0.05
1.50
+/-0.10
E1
E2
1.75
+/-0.10
F
10.25
min
P1
5.50
+/-0.05
P0
8.0
+/-0.1
4.0
+/-0.1
K0
1.88
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.292
+/0.0130
9.5
+/-0.025
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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