NFAM1012L5B

DATA SHEET www.onsemi.com Intelligent Power Module (IPM) 1200 V, 10 A Advance Information NFAM1012L5B The NFAM1012L5B is a fully−integrated inverter power module consisting of an independent High side gate driver, LVIC, six IGBT’s and a temperature sensor (TSU by LVIC), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchronous motors. The IGBT’s are configured in a three−phase bridge with separate emitter connections for the lower legs for maximum flexibility in the choice of control algorithm. The power stage has under−voltage lockout protection (UVP). Internal boost diodes are provided for high side gate boost drive. CASE MODGX DIP39, 54.5x31.0 EP−2 MARKING DIAGRAM NFAM1012L5B ZZZATYWW Features • • • • • • • • Three−phase 1200 V, 10 A IGBT Module with Independent Drivers Active Logic Interface Built−in Under−voltage Protection (UVP) Integrated Bootstrap Diodes and Resistors Separate Low−side IGBT Emitter Connections for Individual Current Sensing of Each Phase Temperature Sensor (TSU Output by LVIC) UL Certification: E339285 This is a Pb−Free Device NFAM1012L5B = Specific Device Code ZZZ = Assembly Lot Code A = Assembly Location T = Test Location Y = Year WW = Work Week Device marking is on package top side ORDERING INFORMATION Typical Application • • • • Industrial Drives Industrial Pumps Industrial Fans Industrial Automation VS(U) VB(U) VDD(UH) HIN(U) VS(V) VB(V) VDD(VH) HIN(V) VS(W) VB(W) VDD(WH) HIN(W) VTS LIN(U) LIN(V) LIN(W) VFO CFOD CIN VSS VDD(L) Device NFAM1012L5B DIP39, 31.0x54.5 (Pb−Free) P High Side HVIC1 HS1 High Side HVIC2 HS2 High Side HVIC 3 HS3 Low Side LVIC with Protection Package U V HS1 HS2 HS3 LS1 LS2 LS3 Shipping† (Qty / Packing) 90 / BOX W LS1 LS2 LS3 NU NV NW Figure 1. Application Schematic This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2019 October, 2021 − Rev. P1 1 Publication Order Number: NFAM1012L5B/D NFAM1012L5B VB(U) (3) N.C (38) P (37) VS(U) (1) HIN (U) (6) VDD(UH) (4) HIN VDD VSS VB HOUT HVIC 1 VS CS + C1 U (36) VB(V) (9) VS(V) (7) HIN (V) (12) VDD(VH) (10) VB HOUT VDD HVIC 2 HIN VSS VS HIN VB HOUT HVIC 3 V (35) Motor VB(W) (15) VS(W) (13) MCU HIN (W) (18) VDD(WH) (16) VTS (20) LIN(U) (21) LIN(V) (22) LIN(W) (23) 5V line VFO (24) CFOD (25) CIN (26) 15V line VDD(L) (28) VSS (27) VDD VSS VS W (34) VTS LIN(U) OUT(U) NU (33) LIN(V) LIN(W) LVIC VFO OUT(V) NV (32) CFOD CIN VDD VSS OUT(W) NW (31) Signal for short circuit trip Phase current Figure 2. Application Schematic − Adjustable Option www.onsemi.com 2 NFAM1012L5B N.C (38) VS(U) (1) P (37) VB(U) (3) VB VDD(UH) (4) HIN(U) (6) HOUT VDD HIN HVIC 1 VSS VS VDD HOUT U (36) VS(V) (7) VB(V) (9) VB VDD(VH) (10) HIN(V) (12) HIN HVIC 2 VSS VS VDD HOUT V (35) VS(W) (13) VB(W) (15) VB VDD(WH) (16) HIN(W) (18) HIN HVIC 3 VTS (20) LIN(U) LIN(V) (22) LIN(V) LIN(W) (23) LIN(W) VFO (24) CFOD (25) OUT(U) VTS LIN(U) (21) VFO W (34) VS VSS NU (33) LVIC OUT(V) CFOD CIN (26) CIN VSS (27) VSS VDD(L) (28) VDD NV (32) OUT(W) NW (31) Figure 3. Equivalent Block Diagram www.onsemi.com 3 NFAM1012L5B Table 1. PIN FUNCTION DESCRIPTION Pin Name 1 VS(U) (2) − 3 VB(U) Description High−Side Bias Voltage GND for U Phase IGBT Driving Dummy High−Side Bias Voltage for U Phase IGBT Driving 4 VDD(UH) (5) − High−Side Bias Voltage for U Phase IC 6 HIN(U) Signal Input for High−Side U Phase 7 VS(V) High−Side Bias Voltage GND for V Phase IGBT Driving (8) − 9 VB(V) Dummy Dummy High−Side Bias Voltage for V Phase IGBT Driving 10 VDD(VH) (11) − High−Side Bias Voltage for V Phase IC 12 HIN(V) Signal Input for High−Side V Phase 13 VS(W) High−Side Bias Voltage GND for W Phase IGBT Driving (14) − 15 VB(W) Dummy Dummy High−Side Bias Voltage for W Phase IGBT Driving 16 VDD(WH) (17) − High−Side Bias Voltage for W Phase IC 18 HIN(W) (19) − 20 VTS 21 LIN(U) Signal Input for Low−Side U Phase 22 LIN(V) Signal Input for Low−Side V Phase 23 LIN(W) Signal Input for Low−Side W Phase 24 VFO 25 CFOD 26 CIN Input for Current Protection 27 VSS Low−Side Common Supply Ground Dummy Signal Input for High−Side W Phase Dummy Voltage Output for LVIC Temperature Sensing Unit Fault Output Capacitor for Fault Output Duration Selection 28 VDD(L) (29) − Low−Side Bias Voltage for IC and IGBTs Driving Dummy (30) − Dummy 31 NW Negative DC−Link Input for U Phase 32 NV Negative DC−Link Input for V Phase 33 NU Negative DC−Link Input for W Phase 34 W Output for U Phase 35 V Output for V Phase 36 U Output for W Phase 37 P Positive DC−Link Input 38 N.C (39) − No Connection Dummy www.onsemi.com 4 NFAM1012L5B Table 2. ABSOLUTE MAXIMUM RATINGS TC = 25°C (Notes 1) Symbol Rating Supply Voltage VPN Conditions Value Unit P − NU, NV, NW 900 V Supply Voltage (Surge) VPN(Surge) P − NU, NV, NW, (Note 2) 1000 V Self Protection Supply Voltage Limit (Short−Circuit Protection Capability VPN(PROT) VDD = VBS = 13.5 V ~ 16.5 V, Tj = 150°C, Vces < 1200 V, Non−Repetitive, < 2 ms 800 V Vces 1200 V VRRM 1200 V ±Ic ±10 A Collector−Emitter Voltage Maximum Repetitive Revers Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) ±Icp Under 1 ms Pulse Width ±20 A Control Supply Voltage High−Side Control Bias Voltage VDD VDD(UH, VH, WH), VDD(L) − VSS −0.3 to 20 V VBS VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) −0.3 to 20 V Input Signal Voltage VIN HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) − VSS −0.3 to VDD V Fault Output Supply Voltage VFO VFO − VSS −0.3 to VDD V IFO Sink Current at VFO pin Fault Output Current Current Sensing Input Voltage VCIN CIN − VSS 2 mA −0.3 to VDD V 83 W Corrector Dissipation Pc Operating Junction Temperature Ti −40 to +150 °C Tstg −40 to +125 °C Tc −40 to +125 °C 2500 V rms Storage Temperature Module Case Operation Temperature Isolation Voltage Viso Per One Chip 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal. Table 3. THERMAL CHARACTERISTICS Rating Junction to Case Thermal Resistance Symbol Conditions Min Typ Max Unit Rth(j−c)Q Inverter IGBT Part (per 1/6 Module) − − 1.5 °C/W Rth(j−c)F Inverter FRD Part (per 1/6 Module) − − 1.8 °C/W 3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table 4. RECOMMENDED OPERATING RANGES (Note 4) Rating Symbol Conditions Min Typ Max Unit − 600 800 V Supply Voltage VPN P − NU, NV, NW Gate Driver Supply Voltages VDD VDD(UH, VH, WH), VDD(L) − VSS 13.5 15 16.5 V VBS VB(U) − VS(U), VB(V) − VS(V), VB(W) − VS(W) 13.0 15 18.5 V dVDD / dt dVBS / dt −1 − 1 V/ms fPWM 1 20 kHz − ms Supply Voltage Variation PWM Frequency Dead Time DT Turn−off to Turn−on (external) www.onsemi.com 5 2 − NFAM1012L5B Table 4. RECOMMENDED OPERATING RANGES (Note 4) (continued) Rating Allowable r.m.s. Current Allowable Input Pulse Width Symbol Io PWIN (on) PWIN (off) Package Mounting Torque Conditions Min Typ Max Unit fPWM = 5 kHz − − 11.2 A rms fPWM = 15 kHz − − 6.3 400 V ≤ VPN ≤ 800 V, 13.5 V ≤ VDD ≤ 16.5 V, 13.0 V ≤ VBS ≤ 18.5 V, −40°C ≤ Tc ≤ 150°C 2.0 − − 2.5 − − M3 Type Screw 0.6 0.7 0.9 VPN = 600 V, VDD = VBS = 15 V, P.F. = 0.8, Tc ≤ 125°C, Tj ≤ 150°C, (Note 5) ms Nm Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 4. Allowable r.m.s Current depends on the actual conditions. 5. Flatness tolerance of the heatsink should be within −50 mm to +100 mm. Table 5. ELECTRICAL CHARACTERISTICS (Tc = 25°C, VD = 15 V, unless otherwise noted) (Note 6) Parameter Test Conditions Symbol Min Typ Max Unit Ices − − 1 mA − − 10 mA − 1.85 2.5 V − 2.0 − 1.80 − 1.70 ton 0.80 1.40 2.00 ms tc (on) − 0.30 0.60 ms toff − 1.70 2.50 ms tc (off) − 0.20 0.60 ms INVERTER SECTION Collector−Emitter Leakage Current Vce = Vces, Tj = 25°C Collector−Emitter Saturation Voltage VDD = VBS = 15 V, IN = 5 V Ic = 10 A, Tj = 25°C Vce = Vces, Tj = 150°C VCE(sat) VDD = VBS = 15 V, IN = 5 V Ic = 10 A, Tj = 150°C FWDi Forward Voltage VF IN = 0 V, If = 10 A, Tj = 25°C IN = 0 V, If = 10 A, Tj = 150°C High Side Low Side Switching Times Switching Times VPN = 600 V, VDD(H) = VDD(L) = 15 V Ic = 10 A, Tj = 25°C, IN = 0 ⇔ 5 V Inductive Load V 2.6 V V trr − 0.40 − ms ton 0.90 1.50 2.10 ms tc (on) − 0.30 0.60 ms toff − 1.70 2.50 ms tc (off) − 0.20 0.60 ms trr − 0.40 − ms VDD(UH) − VSS VDD(VH) − VSS VDD(WH) − VSS IQDDH − − 0.30 mA VDD(L) − VSS IQDDL − − 3.50 mA VDD(UH, VH, WH) = 15 V, fPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High−Side VDD(UH) − VSS VDD(VH) − VSS VDD(WH) − VSS IPDDH − − 0.40 mA VDD(L) = 15 V, fPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for Low−Side VDD(L) − VSS IPDDL − − 7.00 mA VPN = 600 V, VDD(H) = VDD(L) = 15 V Ic = 10 A, Tj = 25°C, IN = 0 ⇔ 5 V Inductive Load DRIVER SECTION Quiescent VDD Supply Current VDD(UH,VH,WH) = 15 V, HIN(U,V,W) = 0 V VDD(L) = 15 V, LIN(U, V, W) = 0 V Operating VDD Supply Current www.onsemi.com 6 NFAM1012L5B Table 5. ELECTRICAL CHARACTERISTICS (Tc = 25°C, VD = 15 V, unless otherwise noted) (Note 6) (continued) Parameter Test Conditions Symbol Min Typ Max Unit DRIVER SECTION Quiescent VBS Supply Current VBS = 15 V HIN(U, V, W) = 0 V VB(U) − VS(U) VB(V) − VS(V) VB(W) − VS(W) IQBS − − 0.30 mA Operating VBS Supply Current VDD = VBS = 15 V, fPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High−Side VB(U) − VS(U) VB(V) − VS(V) VB(W) − VS(W) IPBS − − 6.00 mA ON Threshold Voltage HIN(U, V, W) − VSS, LIN(U, V, W) − VSS 2.6 V VIN(ON) OFF Threshold Voltage VIN(OF) 0.8 V Short Circuit Trip Level VDD = 15 V, CIN−VSS VCIN(ref) 0.46 0.50 V Supply Circuit Under−Voltage Protection Detection Level UVDDD 10.3 0.48 12.5 V Reset Level UVDDR 10.8 13.0 V Detection Level UVBSD 10.0 12.0 V Reset Level UVBSR 10.5 12.5 V Voltage Output for LVIC Temperature Sensing Unit VTS−VSS = 10 nF, Temp. = 25°C VTS (0.905) (1.030) (1.155) V Fault Output Voltage VDD = 0 V, CIN = 0 V, VFO Circuit: 10 kW to 5 V Pull−up VFOH 4.9 − − V VDD = 0 V, CIN = 1 V, VFO Circuit: 10 kW to 5 V Pull−up VFOL − − 0.95 V CFOD = 22 nF tFOD 1.6 2.4 − ms VF 3.4 4.6 5.8 V RBOOT 30 38 46 W Fault−Output Pulse Width BOOTSTRAP SECTION Bootstrap Diode Forward Current If = 0.1 A Built−in Limiting Resistance Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: tFOD = (TBD) x 106 x CFOD (s) 8. Values based on design and/or characterization. 4.0 VTS Output Voltage (V) 3.5 3.0 2.5 2.0 1.5 1.0 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 LVIC Temperature (°C) Figure 4. Temperature of LVIC versus VOT Characteristics www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DIP39, 54.5x31.0 EP−2 CASE MODGX ISSUE O DATE 02 APR 2019 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXX ZZZATYWW XXXXX = Specific Device Code ZZZ = Assembly Lot Code AT = Assembly & Test Location Y = Year WW = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON05290H DIP39, 54.5x31.0 EP−2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative