NGB8206N

NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) Pb−Free Packages are Available 20 AMPS, 350 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V C G RG RGE E Applications MARKING DIAGRAM 4 Collector • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) ESD (Charged−Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range Symbol VCES VCER VGE IC IG IG ESD ESD ESD PD TJ, Tstg Value 390 390 $15 20 50 1.0 20 2.0 8.0 500 150 1.0 −55 to +175 Unit V V V ADC AAC mA mA kV kV V W W/°C °C NGB8206NT4 NGB8206NT4G GB8206N A Y WW G 1 D2PAK CASE 418B STYLE 4 GB 8206NG AYWW 1 Gate 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGB8206N NGB8206NG Package D2PAK D2PAK (Pb−Free) D2PAK D2PAK (Pb−Free) Shipping † 50 Units / Rail 50 Units / Rail 800 / Tape & Reel 800 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 6 1 Publication Order Number: NGB8206N/D NGB8206N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note 1) Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 1.0 62.5 275 °C/W °C/W °C Symbol EAS Value 250 200 180 2000 Unit mJ EAS(R) mJ ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES ICES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current VCE = 15 V, VGE = 0 V VCE = 175 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Resistor (Optional) Gate−Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. TJ = 25°C TJ = 175°C TJ = −40°C 1.5 0.7 1.7 3.8 1.8 1.0 2.0 4.6 2.1 1.3 2.3* 6.0 mV/°C V BVGES IGES RG RGE IG = $5.0 mA VGE = $5.0 V TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = 25°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C 14.25 0.5 1.0 0.4 30 35 30 0.05 1.0 0.005 12 200 325 340 350 365 0.1 1.5 25 0.8 35 39 33 0.25 12.5 0.03 12.5 300 70 16 25 375 390 1.0 10 100* 5.0 39 45* 37 0.5 25 0.25 14 350* V mA W kW mA V mA V Symbol Test Conditions Temperature Min Typ Max Unit http://onsemi.com 2 NGB8206N ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C IC = 9.0 A, VGE = 3.9 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 7.5 A, VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 10 A, VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 15 A, VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 20 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) td(off) tf td(off) tf td(on) tr VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W VGE = 5 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH VGE = 5 V VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W VGE = 5 V TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C 6.0 6.0 4.0 8.0 3.0 5.0 1.5 5.0 1.0 1.0 4.0 3.0 8.0 8.0 6.0 10.5 5.0 7.0 3.0 7.0 1.5 1.5 6.0 5.0 10 10 8.0 14 7.0 9.0 4.5 10 2.0 2.0 8.0 7.0 mSec CISS COSS CRSS f = 10 kHz, VCE = 25 V TJ = 25°C 1100 70 18 1300 80 20 1500 90 22 pF gfs IC = 6.0 A, VCE = 5.0 V TJ = 175°C TJ = −40°C TJ = 25°C 0.95 0.70 1.0 0.95 0.8 1.1 0.85 0.7 1.0 1.0 0.8 1.1 1.15 1.0 1.25 1.3 1.2 1.4 10 1.15 0.95 1.30 1.25 1.05 1.4 1.15 0.95 1.3 1.3 1.05 1.4 1.45 1.3 1.55 1.6 1.5 1.75 18 1.35 1.15 1.40 1.45 1.25 1.50 1.4 1.2 1.6* 1.6 1.4 1.7* 1.7 1.55 1.8* 1.9 1.8 2.0* 25 Mhos V Symbol Test Conditions Temperature Min Typ Max Unit Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 NGB8206N TYPICAL ELECTRICAL CHARACTERISTICS 400 IA, AVALANCHE CURRENT (A) 350 SCIS ENERGY (mJ) 300 250 200 150 100 50 0 0 2 4 6 VCC = 14 V VGE = 5.0 V RG = 1000 W 8 10 INDUCTOR (mH) TJ = 175°C TJ = 25°C 30 25 20 15 10 5 0 −50 L = 1.8 mH L = 3.0 mH VCC = 14 V VGE = 5.0 V RG = 1000 W L = 10 mH −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Self Clamped Inductive Switching VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.0 IC, COLLECTOR CURRENT (A) 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0.0 −50 VGE = 4.5 V −25 0 25 50 75 100 125 150 175 IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 7.5 A 60 50 40 30 20 10 0 Figure 2. Open Secondary Avalanche Current vs. Temperature VGE = 10 V 5V TJ = 175°C 3.5 V 3V 2.5 V 4.5 V 4V 0 1 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature 60 IC, COLLECTOR CURRENT (A) 50 40 TJ = 25°C 30 20 10 0 3V 3.5 V IC, COLLECTOR CURRENT (A) VGE = 10 V 5V 4.5 V 4V 60 Figure 4. Collector Current vs. Collector−to−Emitter Voltage VGE = 10 V 50 5V 40 TJ = −40°C 30 20 4.5 V 4V 3.5 V 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 NGB8206N TYPICAL ELECTRICAL CHARACTERISTICS COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) 45 IC, COLLECTOR CURRENT (A) 40 35 30 25 20 15 10 5 0 0 0.5 1 TJ = 175°C 1.5 2 2.5 TJ = −40°C 3 3.5 4 TJ = 25°C VCE = 5 V 100000 10000 1000 100 10 1.0 0.1 −50 VCE = 175 V VCE = −24 V −25 0 25 50 75 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.50 GATE THRESHOLD VOLTAGE (V) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 −50 −25 0 25 50 75 100 125 150 175 Mean + 4 s Mean − 4 s Mean C, CAPACITANCE (pF) 1000 100 10 1.0 0.1 Ciss Coss Crss 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature 12 10 SWITCHING TIME (ms) 8 6 4 2 0 25 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 50 75 100 125 150 175 12 10 SWITCHING TIME (ms) tdelay 8 6 4 2 0 25 Figure 10. Capacitance vs. Collector−to−Emitter Voltage tfall VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay tfall 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature http://onsemi.com 5 Figure 12. Inductive Switching Fall Time vs. Temperature NGB8206N RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/ Watt) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.00001 0.0001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJC(t) 0.1 0.01 0.000001 Figure 13. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 NGB8206N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E − B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M P U L M SOLDERING FOOTPRINT* 8.38 0.33 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR F VIEW W−W 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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