NJVNJD1718T4G

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • • • • • Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit VCB −50 Vdc VCEO −50 Vdc VEB −5 Vdc IC −2 Adc ICM −3 Adc Base Current IB −0.4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 15 0.1 W W/°C Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.68 0.011 W W/°C TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 2) Symbol RqJC RqJA Max October, 2013 − Rev. 4 SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS COLLECTOR 2, 4 1 BASE 3 EMITTER 4 1 2 °C/W 10 89.3 1 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW J 1718G A Y WW G = Assembly Location = Year = Work Week = Pb−Free Device ORDERING INFORMATION Device Package Shipping† NJD1718T4G DPAK 2500 / Tape & Reel (Pb−Free) NJVNJD1718T4G DPAK 2500 / Tape & Reel (Pb−Free) Unit 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2013 http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NJD1718/D NJD1718, NJVNJD1718 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = −10 mAdc, IB = 0) BVCEO Collector Cutoff Current (VCB = −50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = −5 Vdc, IC = 0) IEBO −50 − − −100 − −100 70 40 240 − Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −0.5 A, VCE = 2 V) (IC = −1.5 Adc, VCE = 2 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = −1 A, IB = −0.05 A) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = −1 A, IB = −0.05 Adc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = −1 Adc, VCE = −2 Vdc) VBE(on) − −0.2 −0.5 − − −1.2 − − −1.2 − 80 − − 33 − − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) (IC = −500 mAdc, VCE = −2 Vdc, ftest = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob Switching Timers VCC = −30 V, IC = −1 A tON − 55 − tSTG − 320 − tf − 40 − 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 MHz pF ns NJD1718, NJVNJD1718 TYPICAL CHARACTERISTICS 300 hFE, DC CURRENT GAIN VCE = 2.0 V 150°C 200 25°C 100 −55°C 0 0.001 0.01 0.1 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1.2 IC/IB = 20 0.8 150°C 0.6 0.4 25°C 0.2 0 0.001 10 IC, COLLECTOR CURRENT (A) VBE(on), BASE−EMITTER VOLTAGE (V) IC/IB = 20 1.20 1.00 −55°C 0.80 25°C 0.60 150°C 0.40 0.20 0.001 0.01 0.1 1 10 C, CAPACITANCE (pF) 1.20 1.10 10 VCE = 2.0 V 1.00 0.90 −55°C 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter Voltage 10 100 1000 TA = 25°C Cib 100 Cob 10 1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. Collector−Emitter Saturation Voltage 0.1 1 10 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) Figure 1. DC Current Gain 1.40 −55°C 1 100 VCE = 2.0 V TA = 25°C 10 0.001 0.01 0.1 1 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 5. Capacitance Figure 6. Current−Gain−Bandwidth Product http://onsemi.com 3 10 NJD1718, NJVNJD1718 TYPICAL CHARACTERISTICS 16 PD, POWER DISSIPATION (W) IC, COLLECTOR CURRENT (A) 10 100 ms 1.0 ms 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 1.0 s 10 ms 1 10 6 4 2 0 100 0 20 40 80 60 100 120 Figure 8. Power Derating 0.3 0.2 0.1 0.01 0.02 8 TA, AMBIENT TEMPERATURE (°C) 0.2 0.02 10 Figure 7. State Operating Area D = 0.5 0.03 12 VCE, COLLECTOR EMITTER VOLTAGE (V) 1 0.7 0.5 0.1 0.07 0.05 14 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 9. Thermal Response http://onsemi.com 4 10 160 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0 (SINGLE PULSE) 0.05 140 20 50 100 200 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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