NJVNJD35N04T4G

NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features  Exceptional Safe Operating Area  High VCE; High Current Gain  NJV Prefix for Automotive and Other Applications Requiring  Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices* http://onsemi.com DARLINGTON POWER TRANSISTORS 4 AMPERES 350 VOLTS 45 WATTS Benefits  Reliable Performance at Higher Powers  Designed for Inductive Loads  Very Low Current Requirements DPAK CASE 369C STYLE 1 Applications      MARKING DIAGRAM Internal Combustion Engine Ignition Control Switching Regulators Motor Controls Light Ballast Photo Flash YWW NJD 35N04G MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 350 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC ICM 4.0 8.0 Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 45 0.36 W W/C −65 to +150 C Collector Current Continuous Peak Operating and Storage Junction Temperature Range TJ, Tstg Y = Year WW = Work Week NJD35N04 = Device Code G = Pb−Free Device ORDERING INFORMATION Package Shipping† NJD35N04G DPAK (Pb−Free) 75 Units / Rail NJVNJD35N04G DPAK (Pb−Free) 75 Units / Rail NJD35N04T4G DPAK (Pb−Free) 2,500 / Tape & Reel NJVNJD35N04T4G DPAK (Pb−Free) 2,500 / Tape & Reel Device Adc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 5 1 Publication Order Number: NJD35N04/D NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance Junction−to−Case Junction−to−Ambient Value Unit C/W 2.78 71.4 RqJC RqJA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max 350 − − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mA, L = 10 mH) VCEO(sus) V Collector Cutoff Current (VCE = 500 V) (IB = 0) (VCE = 500 V, TC = 125C) ICES − − − − 50 250 mA Collector Cutoff Current (VCE = 250 V) (IB = 0) (VCE = 200 V, TC = 125C) ICEO − − − − 50 250 mA Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO − − 5.0 mA − − − − 1.5 1.5 − − − − 2.0 2.0 − − − − 2.0 2.0 2000 300 − − 90 − − − 60 − − − 18 0.8 − − ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125C) VCE(sat) Base−Emitter Saturation Voltage (IC = 2.0 A, IB = 20 mA) (IC = 2.0 A, IB = 20 mA 125C) VBE(sat) Base−Emitter On Voltage (IC = 2.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V 125C) VBE(on) DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 Vdc) hFE − V V V − − DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 2.0 A, VCE = 10 V, f = 1.0 MHz) fT Output Capacitance (VCB = 10 V, IE = 0, f = 0.1 MHz) Cob MHz pF SWITCHING CHARACTERISTICS VCC = 12 V, Vclamp = 250 V, L = 4 mH IC = 2 A, IB1 = 20 mA, IB2 = −20 mA ts tf C B E 2 KW Figure 1. Darlington Circuit Schematic http://onsemi.com 2 mSec NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G TYPICAL CHARACTERISTICS 10,000 45 hFE, DC CURRENT GAIN 40 35 30 TC 25 20 15 10 1000 25C 100 VCE = 2 V 5.0 0 10 10 30 50 70 90 110 130 150 170 Figure 3. DC Current Gain Ic/Ib = 100 2.5 2.0 1.5 0.5 0 25C 125C 0.1 10 Figure 2. Power Derating 3.0 1.0 1.0 IC, COLLECTOR CURRENT (AMPS) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 3.5 0.1 T, TEMPERATURE (C) 4.0 VBE(on), BASE−EMITTER VOLTAGE (V) 125C 1.0 10 2.4 2.0 1.6 25C 1.2 125C 0.8 0.4 0 Ic/Ib = 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Collector−Emitter Saturation Voltage Figure 5. Base−Emitter Saturation Voltage 10 2.0 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 50 1.6 25C 1.2 0.8 125C VCE = 2 V 0.4 0.1 1.0 10 10 mS DC 1.0 1 mS 300 mS 100 mS 0.1 0.01 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 6. Base−Emitter Voltage Figure 7. Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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