NSV60200SMTWTBG

NSS60200SMT 60 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and LED lightning, power management…etc. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com 60 Volt, 2 Amp PNP Low VCE(sat) Transistor MARKING DIAGRAM • NSV Prefix for Automotive and Other Applications Requiring • • 1 2 AR MG G 3 WDFN6 CASE 506AN Features 1 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable NSV60200SMTWTBG − Wettable Flanks Device These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 6 5 4 AR = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 60 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6 Vdc IC 2 A ICM 3 A Collector Current − Continuous Collector Current − Peak Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C (Note 1) Junction and Storage Temperature Range 1. Per JESD51−7 with 100 mm2 Symbol Max Unit RqJA 69 °C/W PD 1.8 W TJ, Tstg −55 to +150 °C 6 7 2 5 4 1 8 3 6,7 1 2 (Pins 3,4,5,8 are not connected) ORDERING INFORMATION pad area and 2 oz. Cu. Package Shipping† NSS60200SMTTBG WDFN6 (Pb−Free) 3000/Tape & Reel NSV60200SMTWTBG WDFN6 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 August, 2017 − Rev. 1 1 Publication Order Number: NSS60200SMT/D NSS60200SMT Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Collector−Emitter Breakdown Voltage (IC = −10 mA, IB = 0) V(BR)CEO −60 V Collector−Base Breakdown Voltage (Ic = −0.1 mA, IE = 0) V(BR)CBO −80 V Emitter−Base Breakdown Voltage (IE = −0.1 mA, IC = 0) V(BR)EBO −6 Characteristic Typ Max Unit OFF CHARACTERISTICS V Collector Cutoff Current (VCB = −60 V, IE = 0) ICBO −100 nA Emitter Cutoff Current (VBE = −5.0 V) IEBO −100 nA ON CHARACTERISTICS hFE DC Current Gain (Note 2) (IC = −100 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1 A, VCE = −2.0 V) (IC = −2 A, VCE = −2.0 V 150 120 90 40 Collector−Emitter Saturation Voltage (Note 2) (IC = −500 mA, IB = −50 mA) (IC = −700 mA, IB = −7.0 mA) (IC = −1 A, IB = −50 mA) (IC = −1 A, IB = −100 mA) (IC = −2 A, IB = −200 mA) VCE(sat) Base*Emitter Saturation Voltage (Note 2) (IC = −500 mA, IB = −50 mA) (IC = −1 A, IB = −50 mA) (IC = −1 A, IB = −100 mA) VBE(sat) Base−Emitter Turn−on Voltage (Note 2) (IC = 500 mA, IB = 50 mA) VBE(on) 230 180 140 80 V −0.115 −0.295 −0.250 −0.200 −0.365 −0.160 −0.420 −0.350 −0.300 −0.450 V −1.0 −1.0 −1.1 −0.9 V DYNAMIC CHARACTERISTICS Cobo 18 pF fT 155 MHz Delay Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) td 15 ns Rise Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) tr 13 ns Storage Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) ts 360 ns Fall Time (VCC = −10 V, IC = −0.5 A, IB1 = −25 mA, IB2 = 25 mA) tf 22 ns Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cutoff Frequency (IC = 50 mA, VCE = 2.0 V, f = 100 MHz) SWITCHING TIMES Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% www.onsemi.com 2 NSS60200SMT TYPICAL CHARACTERISTICS 400 400 350 100°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 350 300 250 25°C 200 −55°C 150 100 25°C 250 200 −55°C 150 100 50 0 0 0.001 0.01 0.1 1 0.001 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. DC Current Gain 2.2 10 1 IB = 20 mA 18 mA 2.0 1.8 VCE(sat), COLLECTOR−EMITTER SATURATION (V) IC, COLLECTOR CURRENT (A) VCE = 5 V 100°C 300 50 16 mA 14 mA 12 mA 10 mA 1.6 1.4 1.2 8.0 mA 1.0 6.0 mA 0.8 4.0 mA 0.6 0.4 2.0 mA 0.2 0 0.1 150°C 100°C 25°C IC/IB = 20 −55°C 0.01 0 1 2 3 4 5 6 0.001 0.01 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 3. Collector Current as a Function of Collector Emitter Voltage Figure 4. Collector−Emitter Saturation Voltage 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 1 VCE(sat), COLLECTOR−EMITTER SATURATION (V) 150°C VCE = 2 V 150°C 150°C 100°C 0.1 25°C −55°C IC/IB = 50 −55°C 150°C 0.1 25°C 100°C IC/IB = 100 0.01 0.01 0.001 0.01 0.1 1 0.001 10 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Collector−Emitter Saturation Voltage Figure 6. Collector−Emitter Saturation Voltage www.onsemi.com 3 1 NSS60200SMT −55°C 25°C 100°C 0.5 150°C IC/IB = 20 0 0.001 0.01 0.1 1 1.0 −55°C 0.8 25°C 0.6 100°C 0.4 150°C 0.2 VCE = 2 V 0 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Base−Emitter Saturation Voltage Figure 8. Base−Emitter “ON” Voltage 240 1.0 0.9 Cibo, INPUT CAPACITANCE (pF) TA = 25°C 0.8 0.7 0.6 0.5 IC = 2.0 A 0.4 0.3 IC = 1.0 A 0.2 IC = 0.5 A 0.1 0 IC = 0.1 A 0.0001 0.001 0.01 160 120 80 0 1 1 2 3 4 5 IB, BASE CURRENT (A) VEB, BASE−EMITTER VOLTAGE (V) Figure 9. Collector Saturation Region Figure 10. Input Capacitance 45 TA = 25°C f = 1 MHz 40 35 30 25 20 15 10 5 0 0 TA = 25°C f = 1 MHz 200 40 0.1 50 Cobo, OUTPUT CAPACITANCE (pF) 1.2 VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 fT, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE(sat), COLLECTOR−EMITTER SATURATION (V) VBE(sat), BASE−EMITTER SATURATION (V) TYPICAL CHARACTERISTICS 5 10 15 20 25 30 VCB, COLLECTOR−BASE VOLTAGE (V) 6 7 1000 TJ = 25°C VCE = 2 V ftest = 100 MHz 100 10 1 1 Figure 11. Output Capacitance 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 12. fT, Current Gain Bandwidth Product www.onsemi.com 4 NSS60200SMT TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (W) 2.5 TA = 25°C 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 TEMPERATURE (°C) Figure 13. Power Derating R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 Duty Cycle = 0.5 0.20 10 0.10 0.05 0.02 1 0.01 Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 14. Thermal Resistance by Transistor www.onsemi.com 5 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE G DATE 22 AUG 2013 SCALE 4:1 PLATING ÍÍÍ ÍÍÍ ÍÍÍ PIN ONE REFERENCE 0.10 C 0.10 C ÇÇÇ ÉÉÉ ÉÉÉ EXPOSED Cu MOLD CMPD DETAIL B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. OPTIONAL CONSTRUCTIONS E TOP VIEW L1 DETAIL A A3 OPTIONAL CONSTRUCTIONS A 0.08 C NOTE 4 A1 C SIDE VIEW MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.95 BSC 0.25 REF 0.20 0.30 --0.10 DIM A A1 A3 b D D2 E E2 e F K L L1 L L DETAIL B 0.10 C ÉÉ ÇÇ ÇÇ A B D GENERIC MARKING DIAGRAM* SEATING PLANE 1 0.10 C A D2 D2 L 1 3 XX = Specific Device Code M = Date Code F DETAIL A E2 6 K XX M B 4 6X 0.10 C A B SOLDERMASK DEFINED MOUNTING FOOTPRINT b 0.10 C A e *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.05 C 1.80 B 2X 0.82 NOTE 3 BOTTOM VIEW 1.10 STYLE 1: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 2: PIN 1. ANODE 2. N/C 3. DRAIN 4. SOURCE 5. GATE 6. CATHODE STYLE 3: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. DRAIN 2 5. GATE 2 6. DRAIN 1 6X 0.45 2.30 PACKAGE OUTLINE 1 6X DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2X2, 0.65P 0.39 0.65 PITCH DIMENSIONS: MILLIMETERS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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