NSVT1418LT1G

NSVT1418L Bipolar Transistor -160 V, -1 A, Low VCE(sat), PNP Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for automotive applications. AEC−Q101 qualified and PPAP capable. www.onsemi.com 3 Features • • • • • • • Large Current Capacitance Low Collector to Emitter Saturation Voltage High Speed Switching High Allowable Power Dissipation AEC−Q101 Qualified and PPAP Capable Pb−Free, Halogen Free and RoHS Compliant Ultra Small Package Facilitates Miniaturization in End Products Typical Applications Symbol Value Unit Collector to Base Voltage VCBO −180 V Collector to Emitter Voltage VCEO −160 V Emitter to Base Voltage VEBO −6 V Collector Current IC −1 A Collector Current (Pulse) ICP −2 A Collector Dissipation (Note 1) PC 0.42 W Junction Temperature Tj 150 _C Tstg −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on ceramic substrate. (250 mm2 x 0.8 mm) © Semiconductor Components Industries, LLC, 2018 April, 2019 − Rev. 0 ELECTRICAL CONNECTION 3 Collector 2 Emitter ABSOLUTE MAXIMUM RATINGS at TA = 25°C Storage Temperature Range 2 SOT−23 CASE 318−08 1 Base • High Side Switch • Lighting, Infotainment Parameter 1 1 MARKING DIAGRAM CMMM CMM = Specific Device Code M = Single Digit Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: NSVT1418L/D NSVT1418L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Value Symbol Parameter Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = −120 V, IE = 0 A −0.1 μA Emitter Cutoff Current IEBO VEB = −4 V, IC = 0 A −0.1 μA DC Current Gain hFE1 VCE = −5 V, IC = −100 mA 100 hFE2 VCE = −5 V, IC = −10 mA 90 fT VCE = −10 V, IC = −50 mA 120 MHz Cob VCB = −10 V, f = 1 MHz 11 pF VCE(sat)1 IC = −250 mA, IB = −25 mA −0.1 −0.5 V VCE(sat)2 IC = −250 mA, IB = −50 mA −0.08 −0.13 V Base to Emitter Saturation Voltage VBE(sat) IC = −250 mA, IB = −25 mA −0.8 −1.2 V Collector to Base Breakdown Voltage V(BR)CBO IC = −10 mA, IE = 0 A −180 V Collector to Emitter Breakdown Voltage V(BR)CEO IC = −1 mA, RBE = ∞ −160 V Emitter to Base Breakdown Voltage V(BR)EBO IE = −10 mA, IC = 0 A −6 V Turn−On Time ton See Figure 1 Storage Time Gain−Bandwidth Product Output Capacitance Collector to Emitter Saturation Voltage Fall Time 400 90 ns tstg 1000 ns tf 70 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PW=20 ms DC ≤ 1% IB1 IB2 OUTPUT INPUT VR 50 W RB + 100 mF VBE = 5 V + RL 470 mF VCC = −100 V IC = 20IB1 = −20IB2 = −300 mA Figure 1. Switching Time Test Circuit www.onsemi.com 2 NSVT1418L TYPICAL CHARACTERISTICS −800 −200 mA −700 IC, COLLECTOR CURRENT (mA) −120 mA −80 mA −60 mA −40 mA −160 mA −600 −20 mA −500 −400 −300 TA = 25°C −200 −100 0 IB = 0 mA 0 −200 −400 −600 −800 −1000 VCE, COLLECTOR−TO−EMITTER VOLTAGE (mV) 1000 −1.2 VCE = −5 V −0.8 TA = −55°C 25°C −0.6 −0.4 150°C −0.2 0 −1 −10 −100 10 1 −1 −10 −100 −1000 −2000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. VBE vs. IC Figure 4. hFE vs. IC VCE(sat), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) −100 IC/IB = 5 −1 −0.01 −1 100 −1000 −2000 −10 −0.1 VCE = −5 V TA = 150°C 25°C −55°C hFE, DC CURRENT GAIN −1.0 VCE(sat), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) VBE, BASE−TO−EMITTER VOLTAGE (V) Figure 2. IC vs. VCE TA = 25°C −55°C −10 −10 −1 −0.1 150°C −100 IC/IB = 10 −0.01 −1000 −2000 −1 TA = 25°C 150°C −55°C −10 −100 −1000 −2000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. VCE(sat) vs. IC Figure 6. VCE(sat) vs. IC www.onsemi.com 3 NSVT1418L −10 −1.2 TA = 25°C IC/IB = 10 IC/IB = 20 −1 IC/IB = 10 IC/IB = 5 −0.1 −0.01 −1 −10 −100 VBE(sat), BASE−TO−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS −0.6 150°C −0.4 −0.2 −10 −100 −1000 −2000 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC Figure 8. VBE(sat) vs. IC fT, GAIN−BANDWIDTH PRODUCT (MHz) Cob, OUTPUT CAPACITANCE (pF) 25°C IC, COLLECTOR CURRENT (mA) f = 1 MHz TA = 25°C 10 1 −1 −10 −100 −200 TA = 25°C VCE = 5 V 100 10 V 10 5 500 1000 50 VCB, COLLECTOR−TO−BASE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 9. Cob vs. VCB Figure 10. fT vs. IC 10 IC, COLLECTOR CURRENT (A) 0.5 PD, POWER DERATING (W) TA = −55°C −0.8 0 −1 −1000 −2000 100 0.4 0.3 0.2 0.1 0 −1.0 Mounted on ceramic board 250 mm2 x 0.8 mm 0 50 100 1 10 ms 100 ms TA = 25°C Single Pulse Mounted on ceramic board 250 mm2 x 0.8 mm 0.01 0.001 150 1 ms 0.1 0.01 0.1 1 DC 10 100 TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR−TO−EMITTER VOLTAGE (V) Figure 11. Power Derating Figure 12. Safe Operating Area www.onsemi.com 4 1000 NSVT1418L ORDERING INFORMATION Device NSVT1418LT1G Marking Package Shipping (Qty / Packing) † CMM SOT−23 (Pb−Free / Halogen Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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