NTB110N65S3HF

NTB110N65S3HF MOSFET – N‐Channel, SUPERFET III, FRFET 650 V, 30 A, 110 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 110 mW @ 10 V 30 A D G Features • • • • • • www.onsemi.com 700 V @ TJ = 150°C Typ. RDS(on) = 98 mW Ultra Low Gate Charge (Typ. Qg = 62 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S N−CHANNEL MOSFET Applications • • • • Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar D2PAK (TO−263 3−Lead) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K NTB110 N65S3HF $Y &Z &3 &K NTB110N65S3HF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 May, 2019 − Rev. 0 1 Publication Order Number: NTB110N65S3HF/D NTB110N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 30 − Continuous (TC = 100°C) 19.5 IDM Drain Current 69 A EAS Single Pulsed Avalanche Energy (Note 2) 380 mJ IAS Avalanche Current (Note 2) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 2.4 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD − Pulsed (Note 1) A Power Dissipation TJ, TSTG TL (TC = 25°C) 240 W − Derate Above 25°C 1.92 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.4 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 100 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. Value Unit 0.52 °C/W 45 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† NTB110N65S3HF NTB110N65S3HF D2PAK 330 mm 24 mm 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NTB110N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25°C − 0.64 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125°C − 97 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 3.0 − 5.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.74 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 15 A − 98 110 mW Forward Transconductance VDS = 20 V, ID = 15 A − 18 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 2635 − pF − 52 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 522 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 91 − pF Total Gate Charge at 10V VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4) − 62 − nC − 18 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 25 − nC f = 1 MHz − 4.6 − W VDD = 400 V, ID = 15 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 24 − ns − 25 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 85 − ns Turn-Off Fall Time − 25 − ns Maximum Continuous Source to Drain Diode Forward Current − − 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 69 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A − − 1.3 V trr Reverse Recovery Time − 95 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 15 A, dIF/dt = 100 A/ms − 371 − nC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTB110N65S3HF TYPICAL PERFORMANCE CHARACTERISTICS 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID, Drain Current [A] ID, Drain Current [A] 100 1 * Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 150°C 10 25°C −55°C * Notes: 1. 250 ms Pulse Test 2. TC = 25°C 0.1 0.2 1 10 VDS, Drain-Source Voltage [V] 1 20 3 4 Figure 1. On-Region Characteristics 0.2 VGS = 10 V 0.0 VGS = 20 V 0 20 8 9 10 40 60 * Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 100 150°C 10 25°C 1 −55°C 0.1 0.01 0.001 0.0 80 0.5 1.0 1.5 2.0 ID, Drain Current [A] VSD, Body Diode Forward Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 VGS, Gate-Source Voltage [V] 100000 10000 Capacitance [pF] 7 1000 * Note: TC = 25°C 0.1 6 Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [W] 0.3 5 VGS, Gate-Source Voltage [V] Ciss 1000 100 Coss * Notes: 1. VGS = 0 V 2. f = 1 MHz 10 Ciss = Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 Crss 100 8 VDS = 130 V VDS = 400 V 6 4 2 0 1000 * Note: ID = 15 A 0 20 40 60 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTB110N65S3HF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 * Notes: 1. VGS = 0 V 2. ID = 10 mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −50 0 100 50 * Notes: 1. VGS = 10 V 2. ID = 15 A 2.5 2.0 1.5 1.0 0.5 0.0 150 −50 0 50 150 100 TJ, Junction Temperature [5C] TJ, Junction Temperature [5C] Figure 7. Breakdown Voltage Variation vs. Temperature 200 100 Figure 8. On-Resistance Variant vs. Temperature 30 30 ms ID, Drain Current [A] ID, Drain Current [A] 100 ms 10 1 ms 10 ms 1 Operation in This Area is Limited by RDS(on) * Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 0.01 DC 1 10 100 20 10 0 1000 VDS, Drain-Source Voltage [V] EOSS, [mJ] 12 8 4 130 260 390 520 75 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 20 0 50 TC, Case Temperature [5C] Figure 9. Maximum Safe Operation Area 0 25 650 VDS, Drain to Source Voltage [V] Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 NTB110N65S3HF TYPICAL PERFORMANCE CHARACTERISTICS (Continued) r(t), Normalized Effective Transient Thermal Resistance 2 1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 0.001 PDM t1 Notes: ZqJC(t) = r(t) × RqJC RqJC = 0.52°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 10−5 10−4 10−3 10−2 10−1 100 t, Rectangular Pulse Duration (s) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 101 t2 102 NTB110N65S3HF IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% tr td(on) t on Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 td(off) t off tf NTB110N65S3HF + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC. www.onsemi.com 8 VDD MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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