NTB095N65S3HF

NTB095N65S3HF MOSFET – N‐Channel, SUPERFET III, FRFET 650 V, 36 A, 95 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 95 mW @ 10 V 36 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 80 mW Ultra Low Gate Charge (Typ. Qg = 66 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S D G D2PAK CASE 418AJ Applications • • • • S Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar MARKING DIAGRAM $Y&Z&3&K NTB095 N65S3HF $Y &Z &3 &K NTB095N65S3HF = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 May, 2019 − Rev. 0 1 Publication Order Number: NTB095N65S3HF/D NTB095N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 36 − Continuous (TC = 100°C) 22.8 IDM Drain Current 90 A EAS Single Pulsed Avalanche Energy (Note 2) 440 mJ IAS Avalanche Current (Note 2) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 2.72 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 272 W 2.176 W/°C −55 to +150 °C 300 °C − Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 18 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. (Note 4) Value Unit 0.46 _C/W 40 4. Device on 1 in2 2−oz copper pad on 1.5 x 1.5 in. board of FR−4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† NTB095N65S3HF NTB095N65S3HF D2PAK 330 mm 24 mm 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NTB095N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.63 V/_C 10 mA ±100 nA 5.0 V 95 mW 97 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 18 A 80 Forward Transconductance VDS = 20 V, ID = 18 A 17 S 2930 pF 61 pF gFS VGS = VDS, ID = 0.86 mA 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 569 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 110 pF Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance 66 nC VDS = 400 V, ID = 18 A, VGS = 10 V (Note 5) 21 nC 25 nC f = 1 MHz 2.4 W 28 ns 28 ns 72 ns 24 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 4.7 W (Note 5) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 36 A ISM Maximum Pulsed Source to Drain Diode Forward Current 90 A VSD Source to Drain Diode Forward Voltage 1.3 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18 A VDD = 400 V, ISD = 18 A, dIF/dt = 100 A/ms 106 ns 414 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTB095N65S3HF TYPICAL CHARACTERISTICS 200 10 ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 1 VDS = 20 V 250 ms Pulse Test o 150 C 10 o 25 C o −55 C 250 ms Pulse Test o TC = 25 C 0.1 0.1 1 10 VDS, Drain−Source Voltage[V] 1 20 2 3 Figure 1. On−Region Characteristics 1000 o 0.15 VGS = 10 V VGS = 20 V 0.05 0.00 0 20 40 60 80 10 o 25 C 0.1 o 0.0 10 VGS, Gate−Source Voltage [V] 10000 Ciss 1000 Coss 100 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 1 10 100 VDS, Drain-Source Voltage [V] 2.0 1000 Figure 5. Capacitance Characteristics ID = 18 A 8 VDS = 130 V VDS = 400 V 6 4 2 0 0.1 0.1 0.5 1.0 1.5 VSD , Body Diode Forward Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 Capacitances [pF] −55 C 0.01 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1 o 150 C 1 0.001 100 250 ms Pulse Test 100 ID, Drain Current [A] 10 VGS = 0 V TC = 25 C 0.10 9 Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [ W ] 0.20 4 5 6 7 8 VGS, Gate-Source Voltage[V] 0 10 20 30 40 50 60 Qg, Total Gate Charge [nC] 70 Figure 6. Gate Charge Characteristics www.onsemi.com 4 NTB095N65S3HF TYPICAL CHARACTERISTICS 2.5 VGS = 0 V ID = 15 mA RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 −50 0 50 100 VGS = 10 V ID = 18 A 2.0 1.5 1.0 0.5 0.0 150 −50 o TJ, Junction Temperature [ C] 50 100 150 o Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 40 200 100 ID, Drain Current [A] 0 TJ, Junction Temperature [ C] 30ms 10 ID, Drain Current [A] 100ms 1ms Operation in This Area is Limited by R DS(on) 10ms DC 1 o 30 20 10 TC = 25 C o 0.1 TJ = 150 C Single Pulse 1 10 100 VDS, Drain−Source Voltage [V] 0 25 1000 Figure 9. Maximum Safe Operating Area EOSS [ mJ] 15 10 5 0 130 260 390 520 VDS, Drain to Source Voltage [V] 150 Figure 10. Maximum Drain Current vs. Case Temperature 20 0 50 75 100 o 125 TC, Case Temperature [ C] 650 Figure 11. Eoss vs. Drain−to−Source Voltage www.onsemi.com 5 NTB095N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 10 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 ZqJC(t) = r(t) x RqJC RqJC = 0.46 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 −5 10 −4 10 −3 10 −2 −1 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 2 10 NTB095N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTB095N65S3HF + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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