NTBGS004N10G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, D2PAK7 100 V, 4.1 mW, 203 A NTBGS004N10G Features • • • • Low RDS(on) High Current Capability Wide SOA These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 100 V 4.1 m @ 10 V 203 A Applications • Hot Swap in 48 V Systems D (Pin 4, TAB) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V ID 203 A PD 340 W ID 21 A PD 3.7 W IDM 2983 A TJ, Tstg −55 to + 175 °C IS 283 A Single Pulse Drain−to−Source Avalanche Energy (IL = 106 Apk, L = 0.1 mH) EAS 561 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Parameter Continuous Drain Current RJC (Note 2) Power Dissipation RJC (Note 2) Continuous Drain Current RJA (Notes 1, 2) Power Dissipation RJA (Notes 1, 2) Pulsed Drain Current Steady State Steady State G (Pin 1) S (Pins 2,3,5,6,7) N−CHANNEL MOSFET TC = 25°C MARKING DIAGRAM TA = 25°C TA = 25°C, tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. AYWWZZ NTBG S004N10G D2PAK7 CASE 418AY A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code NTBGS004N10G = Specific Device Code ORDERING INFORMATION Device NTBGS004N10G Package Shipping† D2PAK7 (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2019 January, 2021 − Rev. 0 1 Publication Order Number: NTBGS004N10G/D NTBGS004N10G THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RJC 0.44 °C/W Junction−to−Ambient − Steady State (Note 2) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 100 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 A, ref to 25°C VGS = 0 V, VDS = 80 V V 81.3 mV/°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 500 A VGS(TH)/TJ ID = 500 A, ref to 25°C −9.3 RDS(on) VGS = 10 V, ID = 100 A 3.0 Forward Transconductance gFS VDS = 5 V, ID = 100 A 71 S Gate−Resistance RG TA = 25°C 0.42  TJ = 25°C 1.0 TJ = 125°C 100 A 100 nA 4.0 V A ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance 2.0 mV/°C 4.1 m CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS 12100 Output Capacitance COSS Reverse Transfer Capacitance CRSS 165 Total Gate Charge QG(TOT) 178 Threshold Gate Charge QG(TH) 79 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 43 Plateau Voltage VGP 6.0 td(ON) 44 VGS = 0 V, VDS = 50 V, f = 1 MHz VGS = 10 V, VDS = 50 V; ID = 100 A 1170 pF nC 66 V SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 50 V, ID = 100 A, RG = 4.7  tf 41 ns 81 29 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.88 TJ = 125°C 0.77 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 100 A 1.2 V 74 VGS = 0 V, dIS/dt = 100 A/s, IS = 50 A QRR 46 ns 29 151 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 s, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTBGS004N10G TYPICAL CHARACTERISTICS VGS = 15V 12V 10V 9.5V 400 9V 300 8V 250 7.5V 200 7V 150 6.5V 6V 100 5.5V 5V 4.5V 50 0 1 3 2 4 150 100 0 3 2 4 6 5 7 9 8 Figure 2. Transfer Characteristics 25 20 15 10 5 4 3 5 7 6 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 10 TJ = 25°C 8 6 VGS = 10 V 4 2 0 20 170 120 70 220 270 370 320 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.8 1 Figure 1. On−Region Characteristics 30 2 200 VGS, GATE−TO−SOURCE VOLTAGE (V) 35 0 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 100 A 40 250 0 5 50 45 TJ = 25°C 300 50 100K VGS = 10 V ID = 100 A TJ = 150°C 10K 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 TJ = −55°C 350 8.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 350 RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 400 1.4 1.2 1.0 0.8 TJ = 125°C 1K 100 TJ = 85°C 10 TJ = 25°C 0.6 0.4 −50 −25 0 25 50 75 100 125 150 1 175 5 15 25 35 45 55 65 75 85 95 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTBGS004N10G TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 10K Coss 1000 Crss 100 10 TJ = 25°C VGS = 0 V f = 1 MHz 0 1000 10 20 30 40 50 60 70 80 100 9 8 7 Qgd Qgs 6 5 4 3 VDS = 50 V ID = 100 A TJ = 25°C 2 1 0 0 25 50 75 100 150 125 175 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge td(off) VGS = 10 V VDS = 50 V ID = 100 A td(on) 1 10 200 VGS = 0 V tr tf 10 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 90 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 100K 250 TJ = 175°C TJ = 150°C TJ = 125°C TJ = 25°C 25 0.3 100 TJ = −55°C 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 s 10 1 ms TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 100 100 s 100 TJ(initial) = 25°C 10 10 TJ(initial) = 150°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 IPEAK (A) ID, DRAIN CURRENT (A) 1000 100 ms 1 sec 1 0.000001 0.00001 0.0001 100 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (sec) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 1 NTBGS004N10G TYPICAL CHARACTERISTICS 1 Duty Cycle = 0.5 ZJC (°C/W) 0.1 0.01 0.2 0.1 0.05 0.02 0.01 0.001 Single Pulse 0.0001 0.000001 0.00001 0.001 0.0001 0.01 t, PULSE TIME (sec) Figure 13. Transient Thermal Impedance www.onsemi.com 5 0.1 1 NTBGS004N10G PACKAGE DIMENSIONS D2PAK7 (TO−263 7 LD) CASE 418AY ISSUE C www.onsemi.com 6 NTBGS004N10G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTBGS004N10G/D