NTBGS6D5N15MC

MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 mW, 121 A NTBGS6D5N15MC Features • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 150 V 7 mW @ 10 V 121 A 8.7 mW @ 8 V Typical Applications • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation D (TAB) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V ID 121 A PD 238 W ID 15 A PD 3.7 W IDM 1800 A TJ, Tstg −55 to +175 °C IS 198 A Single Pulse Drain−to−Source Avalanche Energy (IL = 60 Apk, L = 0.1 mH) EAS 180 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Parameter Continuous Drain Current RqJC (Note 2) Steady State TC = 25°C Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Steady State TA = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 December, 2019 − Rev. 0 1 G (Pin 1) S (Pins 2,3,4,5,6,7) N−CHANNEL MOSFET MARKING DIAGRAM AYWWZZ NTBG S6D5N15 D2PAK7 CASE 418AY NTBGS6D5N15 A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Number ORDERING INFORMATION Device NTBGS6D5N15MC Package Shipping† D2PAK7 (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTBGS6D5N15MC/D NTBGS6D5N15MC THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 0.6 °C/W Junction−to−Ambient − Steady State (Note 1, 2) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 120 V 150 V 59.62 mV/°C TJ = 25°C 1 mA TJ = 125°C 10 mA ±100 nA IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 379 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) 2.5 3.5 4.5 −9.53 V mV/°C VGS = 10 V, ID = 69 A 5.5 7 VGS = 8 V, ID = 34 A 5.9 8.7 mW Forward Transconductance gFS VDS = 5 V, ID = 60.5 A 88 S Gate−Resistance RG TA = 25°C 1.1 W 4745 pF CHARGES & CAPACITANCES VGS = 0 V, VDS = 75 V, f = 1 MHz Input Capacitance CISS Output Capacitance COSS 1370 Reverse Transfer Capacitance CRSS 10.3 VGS = 10 V, VDS = 75 V, ID = 69 A nC Total Gate Charge QG(TOT) 57 Threshold Gate Charge QG(TH) 16 Gate−to−Source Charge QGS 27 Gate−to−Drain Charge QGD 7 Output Charge QOSS VGS = 10 V, VDS = 75 V 171 nC td(ON) VGS = 10 V, VDS = 75 V, ID = 69 A, RG = 6 W 34 ns SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr 75 td(OFF) 39 tf 6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 69 A TJ = 25°C 0.92 TJ = 125°C 0.82 VGS = 0 V, dIS/dt = 100 A/ms, IS = 69 A 74 Charge Time ta Discharge Time tb 22 QRR 141 Reverse Recovery Charge 1.2 V ns 53 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTBGS6D5N15MC TYPICAL CHARACTERISTICS 125 VGS = 7 V VGS = −10 V−7 V VDS = 5 V 100 75 ID, Drain Current (A) ID, Drain Current (A) 125 VGS = 6.5 V 50 VGS = 6.0 V 100 75 TJ = 25°C 50 25 25 VGS = 5.0 V 0 1 0 2 TJ = 175°C VGS = 5.5 V 3 4 0 5 0 1 Figure 1. On−Region Characteristics 5 6 7 8 9 10 Figure 2. Transfer Characteristics TJ = 25°C ID = 69 A 80 70 60 50 40 30 20 10 6.2 6.6 7.0 7.4 7.8 8.2 8.6 9.0 9.4 TJ = 25°C 9 RDS(on), Drain−to−Source Resistance (mW) 90 RDS(on), Drain−to−Source Resistance (mW) 4 10 100 8 VGS = 8 V 7 6 VGS = 10 V 5 4 3 2 9.8 0 25 50 Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.5 100000 VGS = 10 V ID = 69 A IDSS, Leakage (nA) 2.0 1.5 1.0 0.5 −50 −25 0 25 50 75 75 100 125 150 175 200 225 250 ID, Drain Current (A) VGS, Gate−to−Source Voltage (V) RDS(on), Normalized Drain−to−Source Resistance 3 VGS, Gate−to−Source Voltage (V) VDS, Drain−to−Source Voltage (V) 0 2 TJ = −55°C TJ = 175°C TJ = 150°C 10000 TJ = 125°C 1000 100 25 100 125 150 175 VGS = 0 V 50 75 100 125 150 VDS, Drain−to−Source Voltage (V) TJ, Junction Temperature (5C) Figure 5. On−Resistance Variation vs. Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTBGS6D5N15MC TYPICAL CHARACTERISTICS (Continued) 10 VGS,Gate−to−Source Voltage (V) 10 000 C, Capacitance (pF) CISS 1 000 COSS 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 1 0 CRSS 25 50 75 100 125 QG(TOT) 8 QGS 7 QGD 6 5 4 3 VDS = 75 V ID = 69 A TJ = 25°C 2 1 0 150 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, Drain−to−Source Voltage (V) QG, Total Gate Charge (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1000 1000 VGS = 10 V VDS = 75 V ID = 69 A VGS = 0 V td(off) tr 100 IS, Source Current (A) t, Time (ns) 9 tf td(on) 10 100 10 TJ = 175°C TJ = 150°C 1 TJ = 25°C TJ = −55°C 1 0 10 20 30 40 50 0.1 60 0.1 0.3 0.5 0.7 0.9 1.1 VSD, Source−to−Drain Voltage (V) RG, Gate Resistance (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 10 ms 100 1 0.1 100 ms VGS ≤ 10 V Single Pulse TC = 25°C 10 RDS(on) Limit Thermal Limit Package Limit 1 IPEAK (A) ID, Drain Current (A) 1000 TJ(initial) = 125°C 1 ms 10 ms 100 ms & 1 s 10 1 100 TJ(initial) = 25°C 10 1E−06 VDS, Drain−to−Source Voltage (V) 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 Time in Avalanche (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTBGS6D5N15MC TYPICAL CHARACTERISTICS (Continued) 1 50% Duty Cycle 0.1 20% ZqJC (5C/W) 10% 5% 0.01 2% 1% Single Pulse 0.001 0.0001 0.000001 0.00001 0.0001 0.001 Pulse Time (s) Figure 13. Thermal Response www.onsemi.com 5 0.01 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK7 (TO−263 7 LD) CASE 418AY ISSUE C DATE 15 JUL 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13798G D2PAK7 (TO−263 7 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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