NTBGS4D1N15MC

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Other names and brands may be claimed as the property of others. MOSFET - Single N-Channel 150 V, 4.1 mW, 185 A NTBGS4D1N15MC Features • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications www.onsemi.com V(BR)DSS RDS(ON) MAX 4.1 mW @ 10 V 150 V • Power Tools, Battery Operated Vacuums • UAV/Drones, Material Handling • BMS/Storage, Home Automation ID MAX 185 A 4.7 mW @ 8 V D (TAB) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ±20 V ID 185 A Parameter Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Steady State Steady State Pulsed Drain Current G (Pin 1) S (Pins 2,3,4,5,6,7) N−CHANNEL MOSFET TC = 25°C PD 316 W ID 20 A PD 3.7 W MARKING DIAGRAM TA = 25°C IDM 2564 A TJ, Tstg −55 to +175 °C IS 263 A Single Pulse Drain−to−Source Avalanche Energy (IL = 81.5 Apk, L = 0.1 mH) EAS 332 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. D2PAK7 CASE 418AY XXXX A Y WW G XXXXXXXXX AYWWG = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NTBGS4D1N15MC Package Shipping† D2PAK7 (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2019 December, 2019 − Rev. 0 1 Publication Order Number: NTBGS4D1N15MC/D NTBGS4D1N15MC THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 0.5 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 150 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current 20.28 ID = 250 mA, referenced to 25°C VGS = 0 V, VDS = 120 V V mV/°C TJ = 25°C 1 mA TJ = 125°C 10 mA ±100 nA IGSS VGS = ±20 V, VDS = 0 V VGS(TH) VGS = VDS, ID = 574 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) ID = 250 mA, referenced to 25°C 2.5 3.5 4.5 −10.21 V mV/°C VGS = 10 V, ID = 104 A 3.3 4.1 VGS = 8 V, ID = 52 A 3.5 4.7 mW Forward Transconductance gFS VDS = 5 V, ID = 90 A 10.9 S Gate−Resistance RG TA = 25°C 1.2 W 7285 pF CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 10.6 Total Gate Charge QG(TOT) 88.9 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Output Charge QOSS VGS = 0 V, f = 1 MHz, VDS = 75 V VGS = 10 V, VDS = 75 V, ID = 104 A 2025 nC 22.8 37.5 13.0 VGS = 0 V, VDS = 75 V 272 nC 49 ns SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V, VDS = 75 V, ID = 104 A, RG = 6 W tf 38 64 10 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 104 A, TJ = 25°C 0.88 VGS = 0 V, IS = 104 A, TJ = 125°C 0.79 89 VGS = 0 V, IS = 104 A, dIS/dt = 100 A/ms QRR 1.2 V ns 47 42 164 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperature www.onsemi.com 2 NTBGS4D1N15MC TYPICAL CHARACTERISTICS 180 135 120 ID, DRAIN CURRENT (A) VGS = 10 V to 6.5 V 165 150 6.0 V 105 90 75 60 45 30 15 0 5.5 V 5.0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 105 90 75 TJ = 25°C 60 45 30 15 0 TJ = 175°C 0 60 50 40 30 20 10 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4 5 6 7 8 IDSS, LEAKAGE (nA) 1.8 1.6 1.4 1.2 10 TJ = 25°C 4.5 4.0 VGS = 8 V 3.5 VGS = 10 V 3.0 2.5 2.0 0 25 50 75 100 125 150 175 200 225 250 ID, DRAIN CURRENT (A) 1M VGS = 10 V ID = 104 A 2.0 9 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.6 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 3 5.0 Figure 3. On−Resistance vs. Gate−to−Source Voltage 2.2 2 Figure 2. Transfer Characteristics 70 2.4 1 TJ = −55°C Figure 1. On−Region Characteristics TJ = 25°C ID = 104 A 5.5 135 120 VGS, GATE−TO−SOURCE VOLTAGE (V) 80 0 VGS = 5 V 165 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 180 1.0 VGS = 0 V TJ = 175°C 100K TJ = 150°C 10K TJ = 125°C 1K 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 100 0 15 30 45 60 75 90 105 120 135 150 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NTBGS4D1N15MC TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS 1K COSS 100 10 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 50 25 100 75 125 150 8 7 5 4 3 VDS = 75 V ID = 104 A TJ = 25°C 2 1 0 30 20 40 50 60 70 80 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) td(off) 100 tr td(on) tf 0 10 0 1000 10 QGD QGS 6 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 75 V ID = 104 A t, TIME (ns) QG(TOT) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 10 20 30 40 50 VGS = 0 V 100 10 1 0.1 60 90 TJ = 175°C TJ = 25°C TJ = −55°C TJ = 150°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 100 ms TC = 25°C VGS ≤ 10 V Single Pulse 10 1 0.1 100 IPEAK, (A) ID, DRAIN CURRENT (A) 1000 RDS(on) Limit Thermal Limit Package Limit 1 10 TJ(initial) = 25°C 10 TJ(initial) = 125°C 1 ms 10 ms 100 ms & 1 sec 1 100 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTBGS4D1N15MC TYPICAL CHARACTERISTICS 1 50% Duty Cycle ZqJC, (°C/W) 0.1 0.01 20% 10% 5% 2% 1% 0.001 Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) Figure 13. Thermal Response www.onsemi.com 5 0.01 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK7 (TO−263 7 LD) CASE 418AY ISSUE C DATE 15 JUL 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13798G D2PAK7 (TO−263 7 LD) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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