NTD3055-150

NTD3055-150 Power MOSFET 9.0 A, 60 V, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES, 60 VOLTS RDS(on) = 122 mW (Typ) Features • Pb−Free Packages are Available Typical Applications N−Channel Power Supplies Converters Power Motor Controls Bridge Circuits D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Unit 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) VGS VGS "20 "30 Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) PD 28.8 0.19 2.1 1.5 Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C EAS 30 mJ RqJC RqJA RqJA 5.2 71.4 100 TL 260 Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 1 2 Apk May, 2010 − Rev. 4 3 DPAK CASE 369C STYLE 2 “SURFACE MOUNT” 2 1 3 Drain Gate Source W W/°C W W °C/W 4 Drain 4 DPAK−3 CASE 369D STYLE 2 “STRAIGHT LEAD” 1 2 3 1 2 3 Gate Drain Source °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. © Semiconductor Components Industries, LLC, 2010 4 Adc 9.0 3.0 27 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) 4 Drain Vdc ID ID IDM MARKING DIAGRAMS 1 3150G Value VDSS 3150G Rating YWW Symbol Drain−to−Source Voltage YWW • • • • 3150 Y WW G = Device Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTD3055−150/D NTD3055−150 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 − − 70.2 − − − − − − 1.0 10 − − ±100 2.0 − 3.0 6.4 4.0 − − 122 150 − − 1.4 1.1 1.9 − gFS − 5.4 − mhos Ciss − 200 280 pF Coss − 70 100 Crss − 26 40 td(on) − 11.2 25 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 4.5 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 3) (VGS = 10 Vdc, ID = 9.0 Adc) (VGS = 10 Vdc, ID = 4.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time (VDD = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 3) Rise Time Turn−Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc) (Note 3) ns tr − 37.1 80 td(off) − 12.2 25 tf − 23 50 QT − 7.1 15 Q1 − 1.7 − Q2 − 3.5 − VSD − − 0.98 0.86 1.20 − Vdc trr − 28.9 − ns ta − 21.6 − tb − 7.3 − QRR − 0.036 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 9.0 Adc, VGS = 0 Vdc) (Note 3) (IS = 19 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 9.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTD3055−150 VGS = 7 V VGS = 8 V 12 8 VGS = 6 V 4 VGS = 5 V VDS ≥ 10 V 16 12 8 TJ = 25°C 4 TJ = 100°C TJ = −55°C 0 0 1 2 3 4 5 6 7 8 3 6 7 8 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V 0.4 0.3 TJ = 100°C 0.2 TJ = 25°C 0.1 TJ = −55°C 0 4 8 12 16 24 20 9 0.5 VGS = 15 V 0.4 0.3 TJ = 100°C 0.2 TJ = 25°C 0.1 TJ = −55°C 0 0 4 8 12 16 20 24 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−To−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 2.2 2 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.5 0 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 9 V ID, DRAIN CURRENT (AMPS) 16 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 20 VGS = 10 V VGS = 0 V ID = 4.5 A VGS = 10 V TJ = 150°C 1.8 IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (AMPS) 20 1.6 1.4 1.2 1 100 TJ = 125°C 10 TJ = 100°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 60 560 VDS = 0 V C, CAPACITANCE (pF) 480 VGS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (V) NTD3055−150 TJ = 25°C Ciss 400 320 Crss 240 Ciss 160 Coss 80 0 Crss 5 VGS 0 VDS 5 10 15 10 25 20 QT 10 8 VGS Q2 Q1 6 4 ID = 9 A TJ = 25°C 2 0 0 1 2 3 4 5 6 7 8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 10 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 9 A VGS = 10 V t, TIME (ns) tr tf td(off) td(on) 1 10 VGS = 0 V TJ = 25°C 8 6 4 2 0 100 0.6 0.68 0.76 0.84 0.92 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 VGS = 20 V SINGLE PULSE TC = 25°C 10 10 ms 100 ms 1 ms 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 dc 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 10 ID, DRAIN CURRENT (AMPS) 12 1 32 ID = 7.75 A 24 16 8 0 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD3055−150 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 D = 0.5 0.2 1 0.1 P(pk) 0.05 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† DPAK 75 Units/Rail NTD3055−150G DPAK (Pb−Free) 75 Units/Rail NTD3055−150−1 DPAK−3 75 Units/Rail DPAK−3 (Pb−Free) 75 Units/Rail DPAK 2500 Tape & Reel DPAK (Pb−Free) 2500 Tape & Reel Device NTD3055−150 NTD3055−150−1G NTD3055−150T4 NTD3055−150T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTD3055−150 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE C −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD3055−150 PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD3055−150/D