NTD5413NT4G

NTD5413N Power MOSFET 30 Amps, 60 Volts Single N−Channel DPAK Features • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • • 60 V LED Lighting and LED Backlight Drivers DC−DC Converters DC Motor Drivers Switch Mode Power Supplies Power Supplies Secondary Side Synchronous Rectification ID MAX (Note 1) RDS(ON) MAX 30 A 26 mW @ 10 V N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) VGS $30 V ID 30 A Continuous Drain Current RqJC (Note 1) Steady State Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C S MARKING DIAGRAM 4 Drain 23 68 W IDM 84 A TJ, Tstg −55 to +175 °C IS 30 A Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 V, IL(pk) = 30 A, L = 0.3 mH, RG = 25 W) EAS 135 mJ Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C Symbol Max Unit ORDERING INFORMATION °C/W See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) 4 1 2 3 DPAK CASE 369AA STYLE 2 YWW 5413N PD Pulsed Drain Current TC = 25°C G 2 1 3 Drain Gate Source 5413N Y WW G = Device Code = Year = Work Week = Pb−Free Device THERMAL RESISTANCE RATINGS Parameter Junction−to−Case (Drain) Steady State (Note 1) RqJC 2.2 RqJA 58.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [1 oz] including traces). © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 0 1 Publication Order Number: NTD5413N/D NTD5413N ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min V(BR)DSS VDS = 0 V, ID = 250 mA 60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−Body Leakage Current V(BR)DSS/TJ IDSS V 67.5 VGS = 0 V VDS = 60 V mV/°C TJ = 25°C 1.0 TJ = 150°C 50 IGSS VDS = 0 V, VGS = $20 V VGS(th) VGS = VDS, ID = 250 mA $100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Voltage VGS(th)/TJ 2.0 3.4 VDS(on) VGS = 10 V, ID = 20 A 0.37 VGS = 10 V, ID = 20 A, 150°C 0.86 RDS(on) VGS = 10 V, ID = 20 A 18.5 gFS VDS = 15 V, ID = 20 A 36 Input Capacitance Ciss 1160 Output Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz Transfer Capacitance Crss Drain−to−Source On−Resistance Forward Transconductance 4.0 7.9 V mV/°C 0.52 V 26 mW S CHARGES, CAPACITANCES & GATE RESISTANCE 1725 pF 46 nC 240 100 VGS = 10 V, VDS = 48 V, ID = 20 A Total Gate Charge QG(TOT) 35 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 6.5 Gate−to−Drain Charge QGD 16.1 1.4 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time td(on) tr Turn−Off Delay Time Fall Time VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5 W ns 11 20 td(off) 28 tf 8.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (Note 2) VSD VGS = 0 V IS = 20 A TJ = 25°C 0.87 TJ = 125°C 0.8 IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms Reverse Recovery Time trr Charge Time ta Discharge Time tb 15 QRR 105.7 Reverse Recovery Stored Charge 1.2 52 V ns 37 nC 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD5413NT4G Package Shipping† DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5413N TYPICAL PERFORMANCE CURVES 10 V VDS ≥ 10 V 60 6V 40 20 5V VGS = 4.8 V 0 0 1 2 3 4 40 TJ = 125°C 20 TJ = 25°C TJ = −55°C 0 3 5 4 5 6 7 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 20 A TJ = 25°C 0.040 0.035 0.030 0.025 0.020 0.015 0.010 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) 0.045 0.005 60 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.050 0.028 8 TJ = 25°C 0.026 VGS = 10 V 0.024 0.022 0.020 0.018 0.016 0.014 0.012 0.010 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 2.4 2.2 VGS = 0 V ID = 20 A VGS = 10 V TJ = 150°C 2 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 80 TJ = 25°C 7V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 1.8 1.6 1.4 1.2 1 100 TJ = 125°C 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10 5 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5413N C, CAPACITANCE (pF) 2500 VGS = 0 V TJ = 25°C 2000 1500 Ciss 1000 500 0 Coss Crss 0 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES 10 QT 8 6 Q1 Q2 4 2 0 ID = 20 A TJ = 25°C 0 5 10 15 20 25 30 40 35 Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 1000 VDD = 48 V ID = 20 A VGS = 10 V t, TIME (ns) IS, SOURCE CURRENT (A) tr 100 td(off) tf td(on) 10 1 VGS = 0 V TJ = 25°C 40 1 10 30 20 10 0 0.4 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1 ms 100 ms AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.7 0.8 0.9 1.0 140 0 V ≤ VGS ≤ 10 V Single Pulse TC = 25°C 10 ms 10 ms dc 10 1 0.1 0.6 Figure 10. Diode Forward Voltage vs. Current 1000 100 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 ID = 30 A 120 100 80 60 40 20 0 25 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTD5413N TYPICAL PERFORMANCE CURVES 100 D = 0.5 10 r(t), (°C/W) 1 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE B 4 1 2 DATE 03 JUN 2010 3 SCALE 1:1 A E b3 c2 B Z D 1 L4 A 4 L3 2 b2 H DETAIL A 3 c b 0.005 (0.13) e M H C L2 GAUGE PLANE C L L1 DETAIL A A1 ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW YWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G 6.17 0.243 SCALE 3:1 SEATING PLANE DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON13126D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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