NTD5C446NT4G

NTD5C446N Power MOSFET 40 V, 3.5 mW, 110 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V ID 110 A Continuous Drain Current RqJC (Notes 1 & 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2 & 3) TC = 25°C Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State PD ID W 66 PD G S 4 2.1 A TJ, Tstg −55 to 175 °C IS 73 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 214 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter D W 4.3 620 Source Current (Body Diode) 110 A N−CHANNEL MOSFET IDM Operating Junction and Storage Temperature 3.5 mW @ 10 V A 27 19 TA = 100°C TA = 25°C, tp = 10 ms 40 V 33 TA = 100°C TA = 25°C ID 75 TC = 100°C TA = 25°C RDS(on) Symbol Value Unit Junction−to−Case (Drain) (Note 1) RqJC 2.3 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 35 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 1 2 3 DPAK CASE 369C STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain AYWW 5C 446NG Parameter V(BR)DSS 2 1 Drain 3 Gate Source A = Assembly Location Y = Year WW = Work Week 5C446N= Device Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 January, 2017 − Rev. 0 1 Publication Order Number: NTD5C446N/D NTD5C446N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 19 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 4.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 2.0 7.5 mV/°C RDS(on) VGS = 10 V, ID = 50 A 2.9 3.5 gFS VDS = 3 V, ID = 50 A 100 S 2300 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss VGS = 0 V, f = 1.0 MHz, VDS = 20 V 1200 Crss 46 Total Gate Charge QG(TOT) 34.3 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.8 Plateau Voltage VGP 7.2 V td(on) 20 ns nC 5.0 VGS = 10 V, VDS = 20 V, ID = 50 A 12.2 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 62 43 17 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, IS = 50 A TJ = 25°C 0.9 TJ = 125°C 0.8 46 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 1.2 V ns 23 23 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD5C446N TYPICAL CHARACTERISTICS 200 200 VGS = 8 V to 10 V VDS = 3 V 160 120 6.0 V 5.2 V 80 5.0 V 4.8 V 4.6 V 4.4 V 40 160 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 7.0 V 120 80 TJ = 25°C 40 0 0.5 1.0 1.5 2.0 3.0 2.5 2 6 Figure 2. Transfer Characteristics 9 8 7 6 5 4 3 2 1 0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 TJ = 25°C 3.5 VGS = 10 V 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 50 60 80 70 90 100 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 2.0 VGS = 10 V ID = 50 A TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 5 Figure 1. On−Region Characteristics TJ = 25°C ID = 50 A 1.8 TJ = −55°C 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 3 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 125°C 0 1.6 1.4 1.2 1.0 0.8 1000 TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 0.1 0.6 −50 −25 0.01 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTD5C446N TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) CISS COSS 1000 100 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 0 5 10 15 20 25 30 7 5 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 0 5 10 15 25 20 35 30 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 100 VGS = 0 V IS, SOURCE CURRENT (A) t, TIME (ns) QGD QGS 6 40 35 VGS = 10 V VDS = 20 V ID = 50 A 100 tr td(off) td(on) tf 10 TJ = 125°C 1 1 10 100 0.3 0.4 0.5 TJ = 25°C 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TC = 25°C VGS ≤ 10 V Single Pulse 100 TJ (initial) = 25°C IPEAK, (A) ID, DRAIN CURRENT (A) 9 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 10 1 RDS(on) Limit Thermal Limit Package Limit 10 ms 0.5 ms 1 ms 10 ms 1 0.1 0.1 1 10 TJ (initial) = 100°C 10 100 0.00001 1000 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NTD5C446N TYPICAL CHARACTERISTICS 10 R(t) (°C/W) 1 0.1 50% Duty Cycle 20% 10% 5% 2% 1% Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 PULSE TIME (sec) Figure 13. Thermal Characteristics ORDERING INFORMATION Order Number NTD5C446NT4G Package Shipping† DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTD5C446N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 b2 e c SIDE VIEW b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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