NTGS1135PT1G

NTGS1135P Power MOSFET Features −8 V, −5.8 A, Single P−Channel, TSOP−6 • Ultra Low RDS(on) • 1.2 V RDS(on) Rating • This is a Pb−Free Device Applications V(BR)DSS http://onsemi.com RDS(ON) MAX 31 mW @ −4.5 V −8 V 38 mW @ −2.5 V 57 mW @ −1.8 V 300 mW @ −1.2 V P−Channel 1256 −4.6 A ID MAX • Load Switch • Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State tv5s Power Dissipation (Note 1) Steady State tv5s Pulsed Drain Current tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C PD TA = 25°C 1.6 −9.2 −55 to 150 −1.0 260 A °C A °C Symbol VDSS VGS ID Value −8.0 $6.0 −4.6 −3.3 −5.8 0.97 W A Unit V V 3 4 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 1 AA MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1 in sq [2 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 0.0751 in sq) 1 AA = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 654 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t = 5 s (Note 1) Junction−to−Ambient – Steady State (Note 2) Symbol RqJA RqJA RqJA Value 128 78 188 °C/W 1 2 3 Unit Drain Drain Gate ORDERING INFORMATION Device NTGS1135PT1G Package Shipping† TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: NTGS1135P/D © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 0 NTGS1135P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/ TJ RDS(on) VGS = −4.5 V, ID = −4.6 A VGS = −2.5 V, ID = −2.5 A VGS = −1.8 V, ID = −2.0 A VGS = −1.5 V, ID = −1.0 A VGS = −1.2 V, ID = −0.1 A Forward Transconductance gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.0 A VGS = 0 V, IS = −1.0 A TJ = 25°C VGS = −4.5 V, VDS = −8.0 V, ID = −2.5 A, RG = 6.2 W VGS = −4.5 V, VDS = −8.0 V; ID = −2.5 A VGS = 0 V, f = 1 MHz, VDS = −6.0 V VDS = −4.0 V, ID = −3.0 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge −0.6 25 11 14 13 nC −1.0 V ns 10 16 128 71 ns 2200 400 200 21 0.9 2.8 3.9 nC pF VGS = VDS, ID = −250 mA −0.35 −0.57 2.8 22 28 37 47 100 1.2 31 38 57 73 300 S −0.85 V mV/°C mW V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, ID = −250 mA ID = −250 mA, Ref to 25°C VGS = 0 V, VDS = −6 V VDS = 0 V, VGS = ±6 V −8.0 −8.4 −1.0 $100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit 3. Pulse Test: pulse width v 300 ms, duty cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTGS1135P TYPICAL CHARACTERISTICS 10 8 6 −1.4 V 4 2 0 −4.5 V −2.0 V −1.8 V TJ = 25°C 10 −2.5 V −1.6 V −ID, DRAIN CURRENT (A) 8 6 4 2 0 0.4 TJ = −55°C TJ = 25°C TJ = 125°C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −VGS, GATE−TO−SOURCE VOLTAGE (V) VDS ≥ −10 V −ID, DRAIN CURRENT (A) VGS = −1.2 V 0 0.5 1.0 1.5 2.0 2.5 3.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ID = −4.6 A TJ = 25°C 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 Figure 2. Transfer Characteristics TJ = 25°C VGS = −1.2 V VGS = −1.5 V VGS = −1.8 V VGS = −2.5 V VGS = −4.5 V 0 1.0 2.0 3.0 4.0 5.0 6.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 1.4 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = −4.6 A VGS = −4.5 V −IDSS, LEAKAGE (nA) 1.2 100000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1.0 10000 TJ = 150°C 0.8 TJ = 125°C 0.6 −50 −25 0 25 50 75 100 125 150 1000 1 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTGS1135P TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (V) 3000 2500 C, CAPACITANCE (pF) 2000 1500 1000 500 0 Crss 0 1 2 3 4 5 6 7 8 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Coss 5.0 Qt 4.0 3.0 Ciss 2.0 1.0 0 Qgs Qgd TJ = 25°C ID = −4.6 A 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 −IS, SOURCE CURRENT (A) VDD = −8 V ID = −4.6 A VGS = −4.5 V t, TIME (ns) 100 td(off) tf tr td(on) 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Figure 8. Gate−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS1135P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A SOLDERING FOOTPRINT* 2.4 0.094 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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