NTJD4105CT4

NTJD4105C Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88 Features • • • • • Complementary N and P Channel Device Leading −8.0 V Trench for Low RDS(on) Performance ESD Protected Gate − ESD Rating: Class 1 SC−88 Package for Small Footprint (2 x 2 mm) Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish DC−DC Conversion Load/Power Switching Single or Dual Cell Li−Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs Parameter Symbol N−Ch P−Ch N−Ch P−Ch N−Ch C P−Ch C N−Ch C P−Ch C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C tp≤10 ms TA=25°C TA=85°C TA=25°C TA=85°C TJ, TSTG IS TL IDM PD VDSS VGS ID Value 20 −8.0 ±12 ±8.0 0.63 0.46 −0.775 −0.558 0.91 0.65 −1.1 −0.8 ±1.2 0.27 0.14 0.55 0.29 −55 to 150 0.63 −0.775 260 °C °C A A W A V Unit V http://onsemi.com V(BR)DSS N−Ch 20 V RDS(on) TYP 0.29 W @ 4.5 V 0.36 W @ 2.5 V 0.22 W @ −4.5 V ID MAX 0.63 A Applications • • • • P−Ch −8.0 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage a o Sou ce o age Ga e o Sou ce o age Gate−to−Source Voltage Continuous Drain Current Co uous a Cu e St d St t − Steady State (Based on (Based on RqJA) S1 SOT−363 SC−88 (6−LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View 6 1 Co Continuous Drain Current uous a Cu e − Steady State St d St t (Based on (Based on RqJL) Pulsed Drain Current Power Dissipation − S eady S a e oe ss a o Steady State (Based on RqJA) (B d Power Dissipation − S eady S a e oe ss a o Steady State (Based on RqJL) (B d SC−88 (SOT−363) CASE 419B Style 26 MARKING DIAGRAM & PIN ASSIGNMENT 1 Source−1 TCD Gate−1 Drain−2 6 Drain−1 Gate−2 Source−2 Top View = Specific Device Code = Date Code Operating Junction and Storage Temperature Sou ce Current (Body ode) Source Cu e ( ody Diode) N−Ch P−Ch Lead Temperature for Soldering Purposes (1/8” from case for 10 s) THERMAL RESISTANCE RATINGS (Note 1) Junction−to−Ambient Ju c o o be – Steady State St d St t Ju c o o ead ( a ) Junction−to−Lead (Drain) – Steady State St d St t Typ Max Typ Max TC D RqJA RqJL 400 460 194 226 °C/ C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. © Semiconductor Components Industries, LLC, 2004 1 January, 2004 − Rev. 1 Publication Order Number: NTJD4105C/D NTJD4105C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source a o Sou ce Breakdown Voltage Drain−to−Source Breakdown a o Sou ce ea do Voltage Temperature Coefficient Zero Gate Voltage Drain Current e o Ga e o age a Cu e Ga e o Sou ce Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Ga e Threshold Voltage es o d o age Ga e Gate Threshold es o d Temperature Coefficient Drain−to−Source O Resistance a o Sou ce On es s a ce VGS(TH) VGS(TH) / TJ RDS(on) N P N P N P N P P N P N P N P N P N P N P N P N P N VGS=4.5 V, VDD=10 V, 4.5 V, 10 V, , ID=0.5 A, RG=20 W P VGS=−4.5 V, VDD=−4.0 V, 4.5 V, 4.0 V, ID=−0.5 A, RG=8.0 W , VGS=VDS =V ID=250 mA ID=−250 mA 0.6 −0.45 0.92 −0.83 −2.1 2.2 0.29 0.22 0.36 0.32 0.51 2.0 2.0 33 160 13 38 2.8 28 1.3 2.2 0.1 0.1 0.2 0.5 0.4 0.5 0.083 0.227 0.786 0.506 0.013 0.023 0.050 0.036 0.76 0.76 0.63 0.63 0.410 0.078 1.1 1.1 1.5 −1.0 V −mV/ °C / 0.375 0.30 0.445 0.46 0.90 W V(BR)DSS V(BR)DSS / TJ IDSS IGSS N P N P N P N P VGS=0 V ID=250 mA ID=−250 mA 20 −8.0 27 −10.5 22 −6.0 1.0 1.0 10 10 V mV/ °C / mA mA Symbol N/P Test Condition Min Typ Max Units VGS=0 V, VDS=16 V VGS=0 V, VDS=−6.4 V VDS=0 V TJ=25 °C VGS=±12 V VGS=±8.0 Forward Transconductance o a d a sco duc a ce CHARGES AND CAPACITANCES Input Capacitance u Ca ac a ce Ou u Ca ac a ce Output Capacitance Reverse Transfer Ca ac a ce e e se a s e Capacitance Total Gate Charge o a Ga e C a ge Threshold Gate Charge es o d Ga e C a ge Ga e o Sou ce C a ge Gate−to−Source Charge Ga e o Gate−to−Drain Charge a C a ge gFS VGS=4.5 V ID=0.63 A VGS=−4.5 V, ID=−0.57 A VGS=2.5 V, ID=0.40 A VGS=−2.5 V, ID=−0.48 A VGS=−1.8 V, ID=−0.20 A VDS=4.0 V ID=0.63 A VDS=−4.0 V, ID=−0.57 A VDS=20 V VDS=−8.0V VDS=20 V f=1 MHz f=1 MHz, VGS=0 V VDS=−8.0 V VDS=20 V VDS=−8.0 V VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A VGS=4.5 V, VDS=10 V, ID=0.7 A VGS=−4.5 V, VDS=−5.0 V, ID=−0.6 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD 46 225 22 55 5.0 40 3.0 4.0 pF nC C SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Forward Diode Voltage o a d ode o age td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD ms DRAIN−SOURCE DIODE CHARACTERISTICS N P N P N P VGS=0 V, TJ=25°C VGS=0 V, TJ=125°C VGS=0 V, 0 V, dIS/dt=90 A/ms IS=0.23 A IS=−0.23 A IS=0.23 A IS=−0.23 A IS=0.23 A IS=−0.23 A V Reverse Recovery Time e e se eco e y e tRR ms 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD4105C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.4 ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 1.4 V 0.2 1.2 V 0 0 0 2 4 6 8 10 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1.6 V VGS = 4.5 V to 2.2 V VGS = 2 V 1.8 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 1.2 VDS ≥ 10 V 1 0.8 0.6 0.4 0.2 TJ = 125°C 25°C TJ = −55°C 1.6 0.4 0.8 1.2 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2.4 Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.7 0.6 0.5 0.4 TJ = 25°C TJ = −55°C TJ = 125°C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 Figure 2. Transfer Characteristics VGS = 4.5 V VGS = 2.5 V TJ = 125°C TJ = 25°C TJ = −55°C 0.3 0.2 0.1 0 0 0.2 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.4 1 0.6 0.8 ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 3. On−Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 0 −25 0 25 50 75 100 125 150 ID = 0.63 A VGS = 4.5 V and 2.5 V 80 Figure 4. On−Resistance vs. Drain Current and Temperature TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 60 40 Ciss 20 Coss Crss 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTJD4105C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.4 0 0.2 0.4 0.6 TJ = 150°C TJ = 25°C 0.8 1 2 1 0 0 0.2 ID = 0.63 A TJ = 25°C 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD4105C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.4 −ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 −1.4 V 0.2 0 0 −1.2 V 2 4 6 8 −1.6 V VGS = −4.5 V to −2.6 V VGS = −2.2 V −2 V TJ = 25°C −ID, DRAIN CURRENT (AMPS) −1.8 V 1.4 VDS ≥ −10 V 1.2 1 0.8 0.6 0.4 0.2 0 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ = 125°C 25°C TJ = −55°C 0.4 0.8 1.2 2 1.6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2.4 Figure 9. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.5 Figure 10. Transfer Characteristics VGS = −4.5 V VGS = −2.5 V TJ = 125°C TJ = 25°C TJ = −55°C 0.4 0.4 0.3 TJ = 125°C TJ = 25°C TJ = −55°C 0.3 0.2 0.2 0.1 0 0 0.2 0.8 0.6 0.4 1 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.1 0 0 0.2 0.4 1 0.8 0.6 −ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 11. On−Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = −0.7 A VGS = −4.5 V and −2.5 V 300 Figure 12. On−Resistance vs. Drain Current and Temperature TJ = 25°C VGS = 0 V Ciss C, CAPACITANCE (pF) 1.4 240 1.2 180 1 120 Coss 60 Crss 0 −8 0.8 0.6 −50 −25 0 25 50 75 100 125 150 −6 −4 −2 0 TJ, JUNCTION TEMPERATURE (°C) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. On−Resistance Variation with Temperature Figure 14. Capacitance Variation http://onsemi.com 5 NTJD4105C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 5 −IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 2.4 0 0.2 0.4 0.6 TJ = 150°C TJ = 25°C 0.8 1 2 1 0 0 0.4 ID = −0.6 A TJ = 25°C 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 15. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 16. Diode Forward Voltage vs. Current http://onsemi.com 6 NTJD4105C ORDERING INFORMATION1 Device NTJD4105CT1 NTJD4105CT1G NTJD4105CT2 NTJD4105CT2G NTJD4105CT4 NTJD4105CT4G Package SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NTJD4105C PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE T A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 4 S 1 2 3 −B− D 6 PL 0.2 (0.008) M DIM A B C D G H J K N S B N M J C STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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