NTLUD3A50PZTBG

NTLUD3A50PZ MOSFET – Power, Dual, P-Channel, mCool, UDFN, 2.0x2.0x0.55 mm -20 V, -5.6 A http://onsemi.com Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low RDS(on) Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MOSFET V(BR)DSS RDS(on) MAX ID MAX 50 mW @ −4.5 V 70 mW @ −2.5 V −20 V −5.6 A 115 mW @ −1.8 V 175 mW @ −1.5 V Applications • • • • High Side Load Switch Reverse Current Protection Battery Switch Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others D1 G1 G2 S1 P−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V ID −4.4 A Parameter Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C −3.2 t≤5s TA = 25°C −5.6 Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 25°C PD W 2.2 ID TA = 85°C UDFN6 CASE 517BF mCOOLt 1 AA MG G AA = Specific Device Code M = Date Code G = Pb−Free Package A −2.8 −2.0 TA = 25°C PD 0.5 W Pulsed Drain Current tp = 10 ms IDM −13 A Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C ESD (HBM, JESD22−A114) ESD (MM, JESD22−A114) VESD 1400 200 V Source Current (Body Diode) (Note 2) IS −1.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) based on both FETs on. May, 2019 − Rev. 2 6 (Note: Microdot may be in either location) Power Dissipation (Note 2) © Semiconductor Components Industries, LLC, 2014 S2 MARKING DIAGRAM 1 1.4 D2 1 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NTLUD3A50PZ/D NTLUD3A50PZ 2. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 1 oz. Cu based on both FETs on. THERMAL RESISTANCE RATINGS Symbol Max Units Junction-to-Ambient – Steady State (Note 3) RθJA 91 °C/W Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 57 Junction-to-Ambient – Steady State min Pad (Note 4) RθJA 228 Parameter ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min −20 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −20 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±5.0 V VGS(TH) VGS = VDS, ID = −250 mA V −13 TJ = 25°C mV/°C −1.0 mA ±5.0 mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ −0.4 −1.0 3.0 RDS(on) gFS V mV/°C mW VGS = −4.5 V, ID = −4.0 A 37 50 VGS = −2.5 V, ID = −3.0 A 46 70 VGS = −1.8 V, ID = −2.0 A 63 115 VGS = −1.5 V, ID = −1.0 A 86 175 VDS = −5.0 V, ID = −3.0 A 16 S 920 pF CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = −15 V COSS CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 85 80 nC 10.4 VGS = −4.5 V, VDS = −15 V; ID = −3.0 A 0.5 1.2 3.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) ns 7.0 VGS = −4.5 V, VDD = −15 V, ID = −3.0 A, RG = 1 W tf 12 39 30 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −1.0 A TJ = 25°C −0.67 TJ = 125°C −0.56 −1.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) based on both FETs on. 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 1 oz. Cu based on both FETs on. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLUD3A50PZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS tRR 12.1 Charge Time ta 6.4 Discharge Time tb Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, dis/dt = 100 A/ms, IS = −1.0 A QRR ns 5.7 4.0 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) based on both FETs on. 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 1 oz. Cu based on both FETs on. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTLUD3A50PZ TYPICAL CHARACTERISTICS 20 −ID, DRAIN CURRENT (A) VGS = −2.5 V 14 −2 V 12 −1.8 V 10 8 6 −1.5 V 4 2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 14 12 10 TJ = 25°C 8 6 TJ = 125°C 4 0 4.5 TJ = −55°C 1 1.5 2 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C 0.18 ID = −4.0 A 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 1.0 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.5 0.20 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.20 −1.5 V 0.18 TJ = 25°C 0.16 0.14 −1.8 V 0.12 0.10 0.08 −2.5 V 0.06 0.04 0.02 VGS = −4.5 V 0 2 4 6 8 10 12 14 16 18 20 −VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.5 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 16 2 0 0.0 1.4 VDS = −5 V 18 −3.0 V 16 −ID, DRAIN CURRENT (A) 20 −4.5 to −3.5 V 18 100000 VGS = −4.5 V ID = −4.0 A −IDSS, LEAKAGE (nA) 1.3 1.2 1.1 1.0 0.9 TJ = 125°C 10000 TJ = 85°C 1000 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 20 NTLUD3A50PZ VGS = 0 V TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) 1600 1400 1200 Ciss 1000 800 600 400 Coss 200 0 Crss 0 2 4 6 8 10 12 14 16 18 20 5 15 4 VDS 9 2 QGD QGS 0 VDS = −15 V ID = −3.0 A TJ = 25°C 0 2 8 10 0 12 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge −IS, SOURCE CURRENT (A) t, TIME (ns) 6 QG, TOTAL GATE CHARGE (nC) td(off) 100 tf tr td(on) 10 1 10 TJ = 125°C 1.0 TJ = 25°C 0.1 0.3 100 TJ = −55°C 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1.1 100 0.85 ID = −250 mA −ID, DRAIN CURRENT (A) 0.75 0.65 −VGS(th) (V) 4 3 10.0 VGS = −4.5 V VDD = −15 V ID = −3.0 A 0.55 0.45 0.35 0.25 0.15 50 6 1 Figure 7. Capacitance Variation 1.0 12 VGS 3 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 18 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1800 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 25 0 25 50 75 100 125 10 1 0.1 0.01 0.1 150 100 ms 1 ms 10 ms 0 ≤ VGS ≤ −8 V Single Pulse TC = 25°C dc RDS(on) Limit Thermal Limit Package Limit 1 10 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 100 NTLUD3A50PZ R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL CHARACTERISTICS 100 90 RqJA = 91°C/W Steady State 80 70 60 50 Duty Cycle = 0.5 40 30 20 10 0.2 0.05 0.02 0.01 0.1 0 1E−06 Single Pulse 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (s) 1E+00 1E+01 1E+02 1E+03 Figure 13. FET Thermal Response DEVICE ORDERING INFORMATION Package Shipping† NTLUD3A50PZTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUD3A50PZTBG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517BF ISSUE B DATE 20 AUG 2012 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C ÉÉ ÇÇ ÇÇ A B PLATING ÍÍ ÍÍ ÍÍ MOLD CMPD DETAIL B OPTIONAL CONSTRUCTIONS E L TOP VIEW A A3 0.10 C 0.08 C DIM A A1 A3 b D D2 E E2 e F K L L1 L L1 DETAIL B DETAIL A OPTIONAL CONSTRUCTIONS A1 NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÇÇ ÉÉ ÉÉ EXPOSED Cu C SIDE VIEW GENERIC MARKING DIAGRAM* SEATING PLANE 1 0.10 C A 1 B D2 F D2 DETAIL A 3 L E2 6 K 4 6X 0.10 C A BOTTOM VIEW B 0.05 C XXMG G XX = Specific Device Code M = Date Code (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT b 0.10 C A e MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.15 BSC 0.25 REF 0.20 0.30 --0.10 B 1.74 NOTE 3 2X 0.77 1.10 6X 0.47 2.30 PACKAGE OUTLINE 1 6X 0.35 0.65 PITCH DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON48159E UDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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