NTLUD4C26NTAG

MOSFET – Power, Dual, N-Channel, mCool, UDFN6, 2.0x2.0x0.55 mm 30 V, 7.3 A NTLUD4C26N www.onsemi.com Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MOSFET RDS(on) MAX V(BR)DSS ID MAX 24 mW @ 4.5 V 30 V 7.3 A 65 mW @ 1.8 V D2 D1 Applications • Power Load Switch • Wireless Charging • DC−DC Converters G1 S1 Dual N−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±12 V ID 7.3 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C 5.3 t≤5s TA = 25°C 9.1 Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 25°C PD W 1.70 S2 MARKING DIAGRAM 6 1 UDFN6 CASE 517BF mCOOLt 1 AC MG G AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 2.63 ID TA = 85°C A 4.8 3.4 Power Dissipation (Note 2) TA = 25°C PD 0.72 W Pulsed Drain Current tp = 10 ms IDM 22 A TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 1) IS 3.0 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C MOSFET Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. © Semiconductor Components Industries, LLC, 2016 May, 2020 − Rev. 3 G2 1 (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Publication Order Number: NTLUD4C26N/D NTLUD4C26N THERMAL RESISTANCE RATINGS Symbol Max Junction-to-Ambient – Steady State (Note 3) RθJA 73.6 Junction-to-Ambient – t ≤ 5 s (Note 3) RθJA 47.6 Junction-to-Ambient – Steady State min Pad (Note 4) RθJA 174.4 Parameter Unit °C/W 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = 250 mA V 7 TJ = 25°C mV/°C 1 TJ = 125°C mA 10 ±100 nA 1.1 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 0.6 2.8 mV/°C mW VGS = 4.5 V, ID = 5.0 A 20 24 VGS = 1.8 V, ID = 1.0 A 40 65 VDS = 1.5 V, ID = 5.0 A 23 S 460 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Total Gate Charge Threshold Gate Charge Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = 15 V 225 27 VGS = 4.5 V, VDS = 10 V; ID = 5.0 A 5.0 8.0 nC QG(TOT) 5.5 9.0 nC QG(TH) VGS = 4.5 V, VDS = 15 V; ID = 5.0 A 0.55 2.5 1.1 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 5 VGS = 4.5 V, VDD = 15 V, ID = 5.0 A, RG = 1 W tf 15 13 1.7 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25°C 0.7 TJ = 125°C 0.6 1.0 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTLUD4C26N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge 18.5 VGS = 0 V, dIs/dt = 100 A/ms, IS = 2.0 A QRR ns 9.3 9.1 7.8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. DEVICE ORDERING INFORMATION Package Shipping† NTLUD4C26NTAG UDFN6 (Pb−Free) 3000 / Tape & Reel NTLUD4C26NTBG UDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 NTLUD4C26N TYPICAL CHARACTERISTICS 25 TJ = 25°C VDS = 5 V VGS = 1.8 V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 10 V to 2.0 V 15 1.6 V 10 5 20 TJ = 125°C 15 TJ = 25°C 10 5 1.2 V 0 0 1 2 3 4 TJ = −55°C 0 5 0.8 1.2 1.6 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) TJ = 25°C ID = 6 A 28 26 24 22 20 18 2 1.5 3 4 5 6 7 8 9 VGS = 1.8 V 40 35 30 VGS = 2.5 V VGS = 3.7 V 25 VGS = 3.3 V 20 1 3 5 7 9 11 13 VGS = 4.5 V VGS = 10 V 17 19 15 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 VGS = 10 V ID = 6 A 10000 1.3 1.1 0.9 TJ = 150°C 1000 TJ = 125°C 100 10 1 0.7 −50 −25 2 TJ = 25°C 45 15 10 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized) 0.4 VGS, GATE−TO−SOURCE VOLTAGE (V) 30 16 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0 25 50 75 100 125 150 0 TJ = 85°C VGS = 0 V 0 10 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTLUD4C26N TYPICAL CHARACTERISTICS Coss 100 Crss 10 TJ = 25°C VGS = 0 V f = 1 MHz 0 5 10 15 20 25 20 6 15 4 Qgd Qgs 2 TJ = 25°C VDS = 15 V ID = 5 A 0 30 0 2 4 0 10 8 Figure 8. Gate−to−Source vs. Total Charge 2.0 td(off) VGS = 0 V tf 10.0 td(on) 1 10 100 TJ = −55°C TJ = 25°C 1.0 TJ = 125°C 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1.80 1.60 10 10 ms 100 ms 1 VGS < 10 V TA = 25°C Single Pulse Response 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 ms 10 ms 1.20 1.00 0.80 0.60 0.40 dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 250 mA 1.40 VGS(th), (V) ID, DRAIN CURRENT (A) 6 5 Figure 7. Capacitance Variation tr 0.01 10 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 4.5 V t, TIME (ns) 25 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100.0 1.0 30 QT IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) Ciss 10 VDS, DRAIN−TO−SOURCE VOLTAGE VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 0.20 100 0.00 −50 Figure 11. Maximum Rated Forward Biased Safe Operating Area −25 0 25 50 75 100 TJ, TEMPERATURE (°C) 125 Figure 12. Threshold Voltage www.onsemi.com 5 150 175 NTLUD4C26N TYPICAL CHARACTERISTICS 400 350 POWER (W) 300 250 200 150 100 50 0 1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03 SINGLE PULSE TIME (°C) RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) Figure 13. Single Pulse Maximum Power Dissipation 1000 50% Duty Cycle 100 20% 10 10% 5% 1 0.1 2% 1% 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 14. Thermal Response mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). www.onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517BF ISSUE B DATE 20 AUG 2012 SCALE 4:1 D PIN ONE REFERENCE 0.10 C 0.10 C ÉÉ ÇÇ ÇÇ A B PLATING ÍÍ ÍÍ ÍÍ MOLD CMPD DETAIL B OPTIONAL CONSTRUCTIONS E L TOP VIEW A A3 0.10 C 0.08 C DIM A A1 A3 b D D2 E E2 e F K L L1 L L1 DETAIL B DETAIL A OPTIONAL CONSTRUCTIONS A1 NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. ÇÇ ÉÉ ÉÉ EXPOSED Cu C SIDE VIEW GENERIC MARKING DIAGRAM* SEATING PLANE 1 0.10 C A 1 B D2 F D2 DETAIL A 3 L E2 6 K 4 6X 0.10 C A BOTTOM VIEW B 0.05 C XXMG G XX = Specific Device Code M = Date Code (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT b 0.10 C A e MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.15 BSC 0.25 REF 0.20 0.30 --0.10 B 1.74 NOTE 3 2X 0.77 1.10 6X 0.47 2.30 PACKAGE OUTLINE 1 6X 0.35 0.65 PITCH DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON48159E UDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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