NTLUS030N03CTAG

NTLUS030N03C MOSFET – Power, Single, N-Channel, mCool, UDFN6, 1.6x1.6x0.55 mm 30 V, 18 mW, 6.9 A www.onsemi.com Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MOSFET V(BR)DSS ID MAX 18 mW @ 10 V 30 V 6.9 A 26 mW @ 4.5 V D Applications • • • • RDS(on) MAX Power Load Switch Wireless Charging DC−DC Converters Motor Drive G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V ID 6.9 A Continuous Drain Current RθJA (Note 1, 3) Power Dissipation RθJA (Note 1, 3) Continuous Drain Current RθJA (Note 2, 3) Power Dissipation RθJA (Note 2, 3) TA = 25°C Steady State Steady State Pulsed Drain Current TA = 85°C 5.0 S N−CHANNEL MOSFET S D MARKING DIAGRAM 1 UDFN6 (mCOOL) CASE 517AU AKMG G TA = 25°C PD 1.49 W TA = 25°C ID 4.5 A AK = Specific Device Code M = Date Code G = Pb−Free Package W (Note: Microdot may be in either location) TA = 85°C TA = 25°C tp = 10 ms Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 3.2 PD 0.64 IDM 20 A TJ, TSTG -55 to 150 °C TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Symbol Max Junction-to-Ambient – Steady State (Note 1, 3) RqJA 83.7 Junction-to-Ambient – Steady State min Pad (Note 2, 3) RqJA 196.6 Parameter Unit PIN CONNECTIONS D 1 D 2 G 3 6 D 5 D 4 S D S (Top View) °C/W ORDERING INFORMATION 1. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz Cu pad. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 1 Publication Order Number: NTLUS030N03C/D © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 2 NTLUS030N03C 2. Surface−mounted on FR4 board using the min pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 4. This device does not have ESD protection diode. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, ref to 25°C Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = 24 V V 14.2 mV/°C TJ = 25°C 1.0 TJ = 125°C 10 mA IGSS VDS = 0 V, VGS = 20 V 100 nA VGS(TH) VGS = VDS, ID = 250 mA 2.2 V VGS(TH)/TJ ID = 250 mA, ref to 25°C −4.1 RDS(on) VGS = 10 V, ID = 6.0 A 14 18 VGS = 4.5 V, ID = 5.0 A 20 26 VDS = 1.5 V, ID = 5.0 A 16 S 400 pF ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temp. Coefficient Drain-to-Source On Resistance Forward Transconductance gFS 1.2 mV/°C mW CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge VGS = 0 V, f = 1 MHz, VDS = 15 V 215 21 nC 3.7 VGS = 4.5 V, VDS = 15 V; ID = 5.0 A 0.6 1.3 1.2 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 5.0 A 8 nC 9 ns SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time VGS = 4.5 V, VDD = 15 V, ID = 5.0 A, RG = 6 W tf 15 11 2.5 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 6 VGS = 10 V, VDD = 15 V, ID = 5.0 A, RG = 6 W tf 13 14 2 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 5.0 A 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 TJ = 25°C 0.8 TJ = 125°C 0.7 1.0 V NTLUS030N03C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb 20 VGS = 0 V, dIs/dt = 100 A/ms, IS = 5.0 A QRR 11 10 8 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTLUS030N03C TYPICAL CHARACTERISTICS 6 6 VGS = 10 V to 2.8 V 5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 5 4 3 2.4 V 2 2.2 V 1 2.0 V 0 1 3 2 4 3 TJ = 25°C 2 1 TJ = 125°C 0 3 4 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 1. On−Region Characteristics 20 15 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 25 TJ = 25°C VGS = 4.5 V 20 VGS = 10 V 15 10 5 1 2 3 4 5 6 7 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 1.5 2 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 5 A 1.6 1 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 25 10 4 0 10,000 VGS = 10 V ID = 5 A TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 VDS = 10 V 2.6 V 1.4 1.3 1.2 1.1 1.0 0.9 1,000 TJ = 125°C 100 TJ = 85°C 10 0.8 0.7 −50 −25 0 25 50 75 100 125 1 150 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTLUS030N03C TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) Ciss Coss 100 Crss 10 VGS = 0 V TJ = 25°C 1 0 5 10 15 20 25 30 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 8 6 4 VDS = 4.5 V ID = 5 A 2 0 1 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 6 7 8 10 IS, SOURCE CURRENT (A) VGS = 0 V tr td(off) td(on) tf 1 10 100 1 TJ = 125°C TJ = 25°C TJ = −55°C 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (A) t, TIME (ns) 4 Figure 8. Gate−to−Source vs. Total Charge VGS = 4.5 V VDS = 15 V ID = 5 A 2 3 2 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 20 QGD QGS 10 ms 10 100 ms 1 0.1 0.01 0.1 1 ms VGS ≤ 10 V Single Pulse TC = 25°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 dc 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 5 100 1.0 NTLUS030N03C TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 0.2 10 0.1 0.05 1 0.1 0.01 0.02 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response DEVICE ORDERING INFORMATION Device NTLUS030N03CTAG Package Shipping† UDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN6 1.6x1.6, 0.5P CASE 517AU−01 ISSUE O 6 DATE 16 OCT 2008 1 SCALE 4:1 A B D 2X PIN ONE REFERENCE 2X 0.10 C ÉÉ ÉÉ E DETAIL A OPTIONAL CONSTRUCTION A DETAIL B 0.05 C (A3) A1 0.05 C A1 C SIDE VIEW F 3 1 DETAIL B SEATING PLANE D2 DETAIL A G 6X XX MG G XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) b D1 0.10 C A B 0.05 C BOTTOM VIEW NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERMASK DEFINED MOUNTING FOOTPRINT* 0.82 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.20 0.30 1.60 BSC 1.60 BSC 0.50 BSC 0.62 0.72 0.15 0.25 0.57 0.67 0.55 BSC 0.25 BSC 0.20 0.30 −−− 0.15 1 E2 0.10 C A B 4 A3 DIM A A1 A3 b D E e D1 D2 E2 F G L L1 GENERIC MARKING DIAGRAM* L 6 MOLD CMPD OPTIONAL CONSTRUCTION e 0.10 C A B 6X ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW NOTE 4 L1 L 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 0.16 0.43 0.68 2X 0.35 1.90 0.28 1 0.50 PITCH 6X 0.32 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON35147E UDFN6, 1.6X1.6, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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