NTMFS4933NT1G

NTMFS4933N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 210 A Features • Low RDS(on) to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS Applications • OR−ing FET, Power Load Switch, Motor Control • Refer to Application Note AND8195/D for Mounting Information RDS(ON) MAX ID MAX 1.2 mW @ 10 V 30 V 210 A 2.0 mW @ 4.5 V End Products • Server, UPS, Fault−Tolerant Power Systems, Hot Swap D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 34 A Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 100°C N−CHANNEL MOSFET TA = 25°C PD 2.74 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 43 A Continuous Drain Current RqJA (Note 2) TA = 100°C Steady State MARKING DIAGRAM D 27 TA = 25°C PD 7.3 W TA = 25°C ID 20 A TA = 100°C 12.5 Power Dissipation RqJA (Note 2) TA = 25°C PD 1.06 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 210 A TC =100°C Power Dissipation RqJC (Note 1) S (1,2,3) 21.5 Power Dissipation RqJA (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) G (4) 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4933N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability 132 TC = 25°C PD 104 W TA = 25°C, tp = 10 ms IDM 400 A Device Package Shipping† TJ, TSTG −55 to +150 °C NTMFS4933NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel IS 95 A NTMFS4933NT3G Drain to Source DV/DT dV/dt 4.4 V/ns SO−8 FL (Pb−Free) 5000 / Tape & Reel Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 58 Apk, L = 0.3 mH, RG = 25 W) EAS 504 mJ TL 260 °C Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. © Semiconductor Components Industries, LLC, 2012 May, 2019 − Rev. 9 1 Publication Order Number: NTMFS4933N/D NTMFS4933N 2. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz]) www.onsemi.com 2 NTMFS4933N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.1 Junction−to−Ambient – Steady State (Note 3) RqJA 45.6 Junction−to−Ambient – Steady State (Note 4) RqJA 117.5 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 17.13 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz]) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 15 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.6 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 0.9 ID = 15 A 0.9 ID = 30 A 1.5 ID = 15 A 1.5 VDS = 1.5 V, ID = 15 A 82 mV/°C 1.2 2.0 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 92 Total Gate Charge QG(TOT) 62.1 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge 10930 VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 3230 15.7 27 pF nC 10.1 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 148 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 31 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 33 47 23 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns NTMFS4933N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 20 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 88.6 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.68 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 73.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 35.9 ns 37.6 QRR 117 nC Source Inductance LS 0.50 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 1.1 2.2 W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NTMFS4933N TYPICAL CHARACTERISTICS 3.8 V to 10 V 200 180 220 TJ = 25°C 3.4 V VGS = 3.2 V 140 3.0 V 120 100 2.8 V 80 60 2.6 V 40 2.4 V 2.2 V 20 0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 0 1 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS = 10 V 200 180 160 140 120 100 TJ = 125°C 80 60 TJ = 25°C 40 TJ = −55°C 20 0 4 1 0.0027 0.0023 3.5 4 0.0016 VGS = 4.5 V 0.0015 0.0019 0.0014 0.0017 0.0013 0.0015 0.0012 0.0013 0.0011 0.0011 VGS = 10 V 0.0010 0.0009 0.0009 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 0.0008 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 TJ = 25°C 0.0017 0.0021 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.5 0.0018 ID = 30 A TJ = 25°C 0.0025 0.0007 2 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 1.5 −50 −25 0 25 50 75 100 125 150 10000 TJ = 150°C TJ = 125°C 1000 TJ = 85°C 100 10 5 TJ, JUNCTION TEMPERATURE (°C) 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 5 30 NTMFS4933N Ciss C, CAPACITANCE (pF) 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V Coss Crss 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 10 9 7 5 4 VDD = 15 V VGS = 10 V ID = 30 A 1 0 0 20 40 60 80 100 120 QG, TOTAL GATE CHARGE (nC) 140 ID, DRAIN CURRENT (A) VGS = 0 V td(off) tf 100 tr td(on) 10 1 10 15 TJ = 25°C 10 5 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) Figure 10. Diode Forward Voltage vs. Current 100 ms 10 1 ms 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C TJ = 150°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 TJ = 125°C Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 0.1 20 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1000 1 25 0 0.4 100 10 ms DC 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) QGD 2 30 VDD = 15 V ID = 15 A VGS = 10 V 1000 ID, DRAIN CURRENT (A) QGS 3 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 10000 0.01 QT 6 Figure 7. Capacitance Variation 1 TJ = 25°C 8 520 480 440 400 360 320 280 240 200 160 120 80 40 0 ID = 58 A 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 6 1.0 NTMFS4933N TYPICAL CHARACTERISTICS 100 D = 0.5 0.2 0.1 10 0.02 0.01 1 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response GFS (S) r(t) (°C/W) 0.05 260 240 220 200 180 160 140 12 100 80 60 40 20 0 0 10 20 30 40 50 ID (A) 60 70 Figure 14. GFS vs. ID www.onsemi.com 7 80 90 100 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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