NTMFSC010N08M7

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel 80 V, 10 mW, 61 A V(BR)DSS RDS(ON) MAX ID MAX 80 V 10 mW @ 10 V 61 A N−Channel MOSFET NTMFSC010N08M7 D (5−8) Features • • • • • DUAL COOL Top Side Cooling PQFN Package Max rDS(on) = 10 mW at VGS = 10 V, ID = 10 A High Performance Technology for Extremely Low rDS(on) 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G (1) S (2−4) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 61 A Parameter Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 100°C TC = 25°C Steady State TA = 25°C PD W 78.1 ID PD W 3.3 1.3 IDM 180 A TJ, Tstg −55 to +150 °C IS 61 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.9 A) EAS 640 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2021 October, 2021 − Rev. 2 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ AYWWZZ 10N8M7 A 12.5 7.9 TA = 100°C TA = 25°C, tp = 10 ms MARKING DIAGRAM 31.2 TA = 100°C TA = 25°C DFN8 5x6 (Dual Cool 56) CASE 506EG 38.6 TC = 100°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C 1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability 10N8M7 = Specific Device Code ORDERING INFORMATION Device Package Shipping NTMFSC010N08M7 DFN8 (Pb−Free) 3000 / Tape & Reel Publication Order Number: NTMFSC010N08M7/D NTMFSC010N08M7 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain to Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V 49 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 80 V TJ = 25°C Zero Gate Voltage Drain Current IGSS VDS = 0 V, VGS = ± 20 V VGS(TH) VGS = VDS, ID = 120 mA mV/°C 1 mA ±100 nA 4.5 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 2.5 3.3 −9 mV/°C RDS(on) VGS = 10 V ID = 10 A 7.6 10 mW gFS VDS = 5 V ID = 10 A 21.5 40 S VDS = 0 V 2373 VDS = 40 V 2080 2700 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss VGS = 0 V, f = 1 MHz Ciss pF Output Capacitance Coss 286 430 Reverse Transfer Capacitance Crss 11 17 1 2.6 Gate Resistance Threshold Gate Charge Total Gate Charge Rg VGS = 0.5 V, f = 1MHz Qg(th) VGS = 0 to 2 V QG(TOT) VGS = 0 to 10 V VGS = 10 V, VDS = 40 V; ID = 10 A VGS = 0 to 10 V nC 4.3 29.3 W 38 Gate to Source Gate Charge Qgs 11.8 Gate to Drain “Miller” Charge Qgd 4.3 Plateau Voltage VGP 5.5 V Output Charge Qoss VDS = 40 V, VGS = 0 V 26 nC Turn−On Delay Time td(ON) 14 ns Turn−On Rise Time tr VDD = 40 V, ID = 10 A, VGS = 10 V, RGEN = 6 W 6 ns Turn−Off Delay Time td(OFF) 27 ns tf 6 ns SWITCHING CHARACTERISTICS (Note 5) Turn−Off Fall Time DRAIN – SOURCE DIODE CHARACTERISTICS Source to Drain Diode Voltage VSD ISD = 10 A, VGS = 0 V 0.82 1.2 V Reverse Recovery Time TRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 10 A 41 50 ns 58 nC Charge Time ta Discharge Time tb 16.1 QRR 45 Reverse Recovery Charge 24.6 4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTMFSC010N08M7 THERMAL CHARACTERISTICS Symbol Parameter Value RθJC Thermal Resistance, Junction to Case (Top Source) 1.6 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 3.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 Unit °C/W 6. RθJA is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. RθJA is guaranteed by design while R_CA is determined by the user’s board design. b) 81°C/W when mounted on a minimum pad of 2 oz copper. a) 38°C/W when mounted on a 1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G c) Still air, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d) Still air, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper e) Still air, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in2 pad of 2 oz copper f) Still air, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper g) .200FPM Airflow, No Heat Sink, 1 in2 pad of 2 oz copper h) .200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i) .200FPM Airflow, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j) .200FPM Airflow, 20.9⋅10.4⋅12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper k) .200FPM Airflow, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10*L41B*11 Heat Sink, 1 in2 pad of 2 oz copper l) .200FPM Airflow, 45.2⋅41.4⋅11.7 mm Aavid Thermalloy Part # 10*L41B*11 Heat Sink, minimum pad of 2 oz copper 7. Pulse Test: Pulse Width < 300 _s, Duty cycle < 2.0%. www.onsemi.com 3 NTMFSC010N08M7 TYPICAL CHARACTERISTICS VDS = 5 V 9V 8V 90 7V 60 6V 30 120 ID, DRAIN CURRENT (A) 120 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 150 VGS = 10 V 90 60 5V 0 0.5 1.0 1.5 2.0 0 3.0 2.5 2 TJ = −55°C 4 8 6 10 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 9.0 TJ = 25°C ID = 10 A 16 14 12 10 8 6 9 8 7 TJ = 25°C 8.5 VGS = 10 V 8.0 7.5 7.0 10 0 10 20 30 40 50 60 70 90 100 80 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10 2.0 1.8 TJ = 150°C VGS = 10 V ID = 10 A IDSS, REVERSE LEAKAGE CURRENT (mA) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE TJ = 150°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 18 6 TJ = 25°C 30 RDS(on), DRAIN−TO−SOURCE ON− RESISTANCE (mW) ID, DRAIN CURRENT (A) 150 1.6 1.4 1.2 1.0 TJ = 125°C TJ = 100°C 0.1 TJ = 85°C 0.01 0.8 0.6 −100 1 −50 0 50 100 150 200 0.001 VGS = 0 V 0 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 80 NTMFSC010N08M7 TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS C, CAPACITANCE (pF) 1K COSS 100 10 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 40 20 80 60 IS, REVERSE DRAIN CURRENT (A) t, SWITCHING TIME (ns) 4 3 VDS = 40 V ID = 10 A TJ = 25°C 2 1 0 0 10 5 15 20 25 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(on) tr VGS = 10 V VDS = 40 V ID = 10 A tf 1 10 30 VGS = 0 V 100 10 1 0.1 TJ = 150°C 0.01 0.001 100 TJ = 25°C 0 0.4 0.2 TJ = −55°C 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25°C Single Pulse VGS ≤ 10 V IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 5 1000 10 10 ms 10 100 ms 1 0.1 QGD QGS 6 Figure 7. Capacitance Variation td(off) 100 8 7 QG, TOTAL GATE CHARGE (nC) 100 1000 QG(TOT) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 0.5 ms 1 ms 10 ms 10 TJ(initial) = 25°C 10 1 100 TJ(initial) = 125°C 0.001 0.01 0.1 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 5 10 NTMFSC010N08M7 TYPICAL CHARACTERISTICS RqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 2 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Thermal Response DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 100 NTMFSC010N08M7 PACKAGE DIMENSIONS DFN8 5.1x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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