NTMSD3P303R2G

NTMSD3P303R2 FETKY™ P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS(on), • • • • http://onsemi.com MOSFET −3.05 AMPERES −30 VOLTS 0.085 W @ VGS = −10 V Schottky Diode with Low VF Independent Pin−Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use Less Component Placement for Board Space Savings SO−8 Surface Mount Package, Mounting Information for SO−8 Package Provided Pb−Free Package is Available SCHOTTKY DIODE 3.0 AMPERES 30 VOLTS 420 mV @ IF = 3.0 A Applications • DC−DC Converters • Low Voltage Motor Control • Power Management in Portable and Battery−Powered Products, i.e.: A Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones A MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit S Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 ) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds VDSS VGS −30 "20 V V G RJA PD ID ID IDM 171 0.73 −2.34 −1.87 −8.0 °C/W W A A A RJA PD ID ID IDM 100 1.25 −3.05 −2.44 −12 °C/W W A A A RJA PD ID ID IDM TJ, Tstg 62.5 2.0 −3.86 −3.10 −15 −55 to +150 140 °C/W W A A A °C EAS mJ March, 2006 − Rev. 2 8 2 7 C C 6 D 3 4 D 5 (TOP VIEW) MARKING DIAGRAM & PIN ASSIGNMENT C C D D 8 8 E3P303 AYWW G G 1 SO−8 CASE 751 STYLE 18 1 A A S G E3P303 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, Steady State. 2. Mounted onto a 2″ square FR−4 Board (1in sq, 2 oz Cu 0.06″ thick single sided), Steady State. 3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. © Semiconductor Components Industries, LLC, 2006 1 1 Device Package Shipping† NTMSD3P303R2 SO−8 2500/Tape & Reel NTMSD3P303R2G SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMSD3P303R2/D NTMSD3P303R2 SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 30 V Thermal Resistance − Junction−to−Ambient (Note 5) RJA 197 °C/W Thermal Resistance − Junction−to−Ambient (Note 6) RJA 97 °C/W Thermal Resistance − Junction−to−Ambient (Note 7) RJA 62.5 °C/W IO 3.0 A Peak Repetitive Forward Current (Note 7) (Rated VR, Square Wave, 20 kHz, TA = 105°C) IFRM 6.0 A Non−Repetitive Peak Surge Current (Note 7) (Surge Applied at Rated Load Conditions, Half−Wave, Single Phase, 60 Hz) IFSM 30 A Rating Average Forward Current (Note 7) (Rated VR, TA = 100°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 5. Minimum FR−4 or G−10 PCB, Steady State. 6. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State. 7. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 8) Symbol Characteristic Min Typ Max −30 − − −30 − − − − − − −1.0 −25 − − −100 − − 100 −1.0 − −1.7 3.6 −2.5 − − − 0.063 0.090 0.085 0.125 − 5.0 − Ciss − 520 750 Coss − 170 325 Crss − 70 135 Unit OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = −20 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C Adc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 Adc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −10 Vdc, ID = −3.05 Adc) (VGS = −4.5 Vdc, ID = −1.5 Adc) RDS(on) Forward Transconductance (VDS = −15 Vdc, ID = −3.05 Adc) gFS Vdc  Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = −24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) 8. Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 pF NTMSD3P303R2 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 9) Characteristic Symbol Min Typ Max Unit td(on) − 12 22 ns tr − 16 30 td(off) − 45 80 SWITCHING CHARACTERISTICS (Notes 10 & 11) Turn−On Delay Time (VDD = −24 Vdc, ID = −3.05 Adc, VGS = −10 Vdc, RG = 6.0 ) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = −24 Vdc, ID = −1.5 Adc, VGS = −4.5 Vdc, RG = 6.0 ) Rise Time Turn−Off Delay Time Fall Time Total Gate Charge (VDS = −24 Vdc, VGS = −10 Vdc, ID = −3.05 Adc) Gate−Source Charge Gate−Drain Charge tf − 45 80 td(on) − 16 − tr − 42 − td(off) − 32 − tf − 35 − Qtot − 16 25 ns nC Qgs − 2.0 − Qgd − 4.5 − VSD − − −0.96 −0.78 −1.25 − Vdc trr − 34 − ns ta − 18 − tb − 16 − QRR − 0.03 − BODY−DRAIN DIODE RATINGS (Note 10) Diode Forward On−Voltage (IS = −3.05 Adc, VGS = 0 Vdc) (IS = −3.05 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = −3.05 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ s) Reverse Recovery Stored Charge C 9. Handling precautions to protect against electrostatic discharge is mandatory. 10. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 11. Switching characteristics are independent of operating junction temperature. SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 12) VF Maximum Instantaneous Forward Voltage IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current Maximum Voltage Rate of Change VR = 30 Vdc VR = 30 Vdc 12. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. http://onsemi.com 3 IR TJ = 25°C TJ = 125°C Volts 0.28 0.42 0.50 0.13 0.33 0.45 Volts TJ = 25°C TJ = 125°C 250 dV/dt 25 10,000 A mA V/s NTMSD3P303R2 TYPICAL MOSFET ELECTRICAL CHARACTERISTICS −ID, DRAIN CURRENT (AMPS) VGS = −4 V VGS = −4.6 V VGS = −6 V 4 VGS = −4.8 V TJ = 25°C VGS = −3.6 V VGS = −2.8 V VGS = −3.2 V VGS = −5 V 3 2 VGS = −2.6 V 1 0 0.25 0.5 0.75 1 1.25 VGS = −3 V 1.5 1.75 TJ = −55°C 1 1 2 3 4 5 Figure 2. Transfer Characteristics ID = −3.05 A TJ = 25°C 0.4 0.3 0.2 0.1 5 4 6 7 8 0.7 ID = −1.5 A TJ = 25°C 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 3 5 6 7 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Gate−to−Source Voltage 0.25 TJ = 25°C 0.2 VGS = −4.5 V 0.15 VGS = −10 V 0.1 1 TJ = 25°C 2 Figure 1. On−Region Characteristics 0.5 0.05 TJ = 100°C 3 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.6 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.7 0 VDS > = −10 V 5 0 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () VGS = −4.4 V VGS = −8 V 5 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 6 VGS = −10 V 2 3 4 5 6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) −ID, DRAIN CURRENT (AMPS) 6 1.6 1.4 ID = −3.05 A VGS = −10 V 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 −ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance vs. Drain Current and Gate Voltage Figure 6. On Resistance Variation with Temperature http://onsemi.com 4 150 NTMSD3P303R2 VGS = 0 V VDS = 0 V 1200 C, CAPACITANCE (pF) IDSS, LEAKAGE (nA) 10000 TJ = 150°C 1000 TJ = 125°C 100 VGS = 0 V Ciss 1000 800 Ciss Crss 600 400 Coss 200 10 6 10 14 18 22 26 0 10 30 5 QT 15 6 10 Q2 2 4 6 8 10 12 0 16 14 30 100 td(off) tf tr 10 1 1 100 10 RG, GATE RESISTANCE () Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 10. Resistive Switching Time Variation vs. Gate Resistance 3 VDS = −24 V ID = −1.5 A VGS = −4.5 V tr tf 1 25 Qg, TOTAL GATE CHARGE (nC) 100 10 20 5 ID = −3.05 A TJ = 25°C 0 15 td(on) 2 1000 t, TIME (ns) 20 t, TIME (ns) VDS VGS 0 10 VDS = −24 V ID = −3.05 A VGS = −10 V 25 10 IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 30 1000 4 −VDS Figure 8. Capacitance Variation 12 Q1 5 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Drain−to−Source Leakage Current vs. Voltage 8 0 −VGS −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 Crss TJ = 25°C td(off) td(on) 100 VGS = 0 V TJ = 25°C 2.5 2 1.5 1 0.5 0 0.2 0.4 0.6 0.8 1 RG, GATE RESISTANCE () −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current http://onsemi.com 5 1.2 NTMSD3P303R2 VGS = 12 V SINGLE PULSE TA = 25°C 10 1.0 ms di/dt 10 ms IS dc 1.0 trr ta 0.1 0.01 1 0.25 IS tp 10 1.0 tb TIME RDS(on) THERMAL LIMIT PACKAGE LIMIT IS 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. Maximum Rated Forward Biased Safe Operating Area Figure 14. Diode Reverse Recovery Waveform 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE −ID, DRAIN CURRENT (AMPS) 100 D = 0.5 0.2 0.1 0.1 Normalized to RJA at Steady State (1″ pad) Chip Junction 2.32  18.5  50.9  37.1  56.8  0.05 0.02 0.01 1E−03 0.0014 F 0.01 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F Ambient Single Pulse 1E−02 24.4  1E−01 1E+00 t, TIME (s) Figure 15. FET Thermal Response http://onsemi.com 6 1E+01 1E+02 1E+03 NTMSD3P303R2 10 85°C 25°C −40 °C TJ = 125°C 1.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 85°C TJ = 125°C 0.1 0 0.1 0.2 0.3 0.4 0.6 0.5 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 16. Typical Forward Voltage Figure 17. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) TJ = 125°C 0.01 85°C 0.001 0.0001 25°C 0.8 0.1 TJ = 125°C 0.01 0.001 25°C 0.0001 0.00001 0.00001 0.000001 0.000001 0 5.0 10 15 20 25 30 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) 100 10 5.0 10 15 20 20 25 30 Figure 19. Maximum Reverse Current 1000 0 15 10 VR, REVERSE VOLTAGE (VOLTS) Figure 18. Typical Reverse Current C, CAPACITANCE (pF) 25°C 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 25 30 5.0 dc 4.5 FREQ = 20 kHz 4.0 3.5 SQUARE WAVE 3.0 Ipk/Io =  2.5 Ipk/Io = 5.0 2.0 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 0 VR, REVERSE VOLTAGE (VOLTS) 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 20. Typical Capacitance Figure 21. Current Derating http://onsemi.com 7 140 160 NTMSD3P303R2 PFO , AVERAGE POWER DISSIPATION (WATTS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.75 dc 1.50 SQUARE WAVE Ipk/Io =  1.25 Ipk/Io = 5.0 1.00 Ipk/Io = 10 0.75 Ipk/Io = 20 0.50 0.25 0 1.0 0 2.0 3.0 5.0 4.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 22. Forward Power Dissipation Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.1010  CHIP JUNCTION 39.422 F 0.01 0.01 1.2674  27.987  30.936  36.930  493.26 F 0.0131 F 0.2292 F 2.267 F SINGLE PULSE 0.001 1.0E−05 1.0E−04 AMBIENT 1.0E−03 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 Figure 23. Schottky Thermal Response FETKY is a trademark of International Rectifier Corporation. http://onsemi.com 8 1.0E+01 1.0E+02 1.0E+03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative