NTMSD6N303R2SG

NTMSD6N303R2 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKYt The FETKY product family incorporates low RDS(on) MOSFETs packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. Features http://onsemi.com MOSFET 6.0 AMPERES 30 VOLTS 24 mW @ VGS = 10 V (Typ) SCHOTTKY DIODE 6.0 AMPERES 30 VOLTS 420 mV @ IF = 3.0 A A A S G 1 2 3 4 5 (TOP VIEW) 8 7 6 C C D D • Pb−Free Packages are Available Applications • • • • • • • Buck Converter Buck−Boost Synchronous Rectification Low Voltage Motor Control Battery Packs Chargers Cell Phones MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous Drain Current − (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 2) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) Symbol VDSS VDGR VGS IDM PD EAS ID Value 30 30 "20 6.0 30 2.0 325 Unit Vdc Vdc Vdc Adc Apk Watts mJ 8 1 SO−8 CASE 751 STYLE 18 E6N3 x A Y WW G MARKING DIAGRAM & PIN ASSIGNMENT 8 C C DD E6N3x AYWW G G 1 A A SG = Device Code = Blank or S = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max. ORDERING INFORMATION Device NTMSD6N303R2 NTMSD6N303R2G NTMSD6N303R2SG Package SO−8 Shipping† 2500/Tape & Reel SO−8 2500/Tape & Reel (Pb−Free) SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTMSD6N303R2/D NTMSD6N303R2 SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (Note 3) (Rated VR) TA = 104°C Peak Repetitive Forward Current (Note 3) (Rated VR, Square Wave, 20 kHz) TA = 108°C Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, half−wave, single phase, 60 Hz) THERMAL CHARACTERISTICS − SCHOTTKY AND MOSFET Thermal Resistance − Junction−to−Ambient (Note 4) − MOSFET Thermal Resistance − Junction−to−Ambient (Note 5) − MOSFET Thermal Resistance − Junction−to−Ambient (Note 3) − MOSFET Thermal Resistance − Junction−to−Ambient (Note 4) − Schottky Thermal Resistance − Junction−to−Ambient (Note 5) − Schottky Thermal Resistance − Junction−to−Ambient (Note 3) − Schottky Operating and Storage Temperature Range RqJA RqJA RqJA RqJA RqJA RqJA TJ, Tstg 167 97 62.5 197 97 62.5 −55 to +150 °C/W Symbol VRRM VR IO Ifrm Ifsm Value 30 2.0 4.0 30 Unit Volts Amps Amps Amps Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State. SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics Maximum Instantaneous Forward Voltage (Note 6) IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (Note 6) VR = 30 V VR = 30 V IR Symbol VF TJ = 25°C 0.28 0.42 0.50 TJ = 25°C 250 − dV/dt 10,000 Value TJ = 125°C 0.13 0.33 0.45 TJ = 125°C − 25 mA mA V/ms Unit Volts Maximum Voltage Rate of Change 6. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 NTMSD6N303R2 MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 7) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 6 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss td(on) (VDD = 15 Vdc, ID = 1 A, VGS = 10 V, RG = 6 W) tr td(off) tf td(on) (VDD = 15 Vdc, ID = 1 A, VGS = 4.5 V, RG = 6 W) tr td(off) tf QT (VDS = 15 Vdc, VGS = 10 Vdc, ID = 5 A) BODY−DRAIN DIODE RATINGS (Note 7) Diode Forward On−Voltage Reverse Recovery Time (IS = 5 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = 5 A, dIS/dt = 100 A/ms, VGS = 0 V) 7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. (IS = 1.7 Adc, VGS = 0 V) (IS = 1.7 Adc, VGS = 0 V, TJ = 150°C) VSD trr ta tb QRR − − − − − − 0.75 0.62 26 11 15 0.015 1.0 − − − − − mC Vdc ns Q1 Q2 Q3 − − − − − − − − − − − − − − − 680 210 70 9 22 45 45 13 27 22 34 19 2.4 5.0 4.3 950 300 135 18 40 80 80 30 50 40 70 30 − − − nC ns ns pF VGS(th) Vdc 1.0 − − − − 1.8 4.6 0.024 0.030 10 2.5 − 0.032 0.040 − mV/°C W V(BR)DSS Vdc 30 − − − − − 30 − − − − − 1.0 20 100 mV/°C mAdc Symbol Min Typ Max Unit IDSS IGSS nAdc RDS(on) gFS Mhos SWITCHING CHARACTERISTICS (Notes 7 & 8) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge http://onsemi.com 3 NTMSD6N303R2 TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 12 ID, DRAIN CURRENT (AMPS) 10 8 6 4 2 0 2.8 V VGS = 2.6 V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 3V 12 ID, DRAIN CURRENT (AMPS) VDS ≥ 10 V 10 8 6 TJ = 25°C 4 2 0 TJ = 125°C TJ = −55°C 0 1 2 3 4 5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 V 6V 4V 3.4 V 3.6 V 3.8 V TJ = 25°C 3.2 V Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.05 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 1 2 3 4 5 T = 25°C T = −55°C T = 125°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.05 0.045 0.04 0.035 0.03 0.025 0.02 0.015 0.01 1 2 Figure 2. Transfer Characteristics VGS = 10 TJ = 25°C VGS = 4.5 V VGS = 10 V 6 7 8 9 10 11 12 3 4 5 6 7 8 9 10 11 12 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 10 ID = 3 A VGS = 10 V 10,000 Figure 4. On−Resistance versus Drain Current and Gate Voltage VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150°C 1000 100 TJ = 125°C −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 NTMSD6N303R2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 Ciss 10 8 TJ = 25°C QT 30 VGS 6 4 2 Q3 0 0 2 4 6 8 10 12 14 VDS Q1 Q2 20 Crss Ciss 10 ID = 6 A TJ = 25°C 16 18 20 0 Coss VDS = 0 V VGS = 0 V Crss 25 10 5 10 15 20 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5 0 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 VDD = 15 V ID = 6 A VGS = 10 V Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 6 td(off) tf tr IS, SOURCE CURRENT (AMPS) 5 4 3 2 1 0 VGS = 0 V TJ = 25°C t, TIME (ns) 100 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 100 ID, DRAIN CURRENT (AMPS) Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 1.0 ms 10 10 s max. 10 ms 1 325 300 275 250 225 200 175 150 125 100 75 50 25 0 Figure 10. Diode Forward Voltage versus Current ID = 6 A VGS = 12 V SINGLE PULSE TC = 25°C dc 0.1 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 NTMSD6N303R2 TYPICAL FET ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 CHIP JUNCTION 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F AMBIENT 1000 0.1 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 10 85°C 25°C 10 85°C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 125°C 1.0 −40 °C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TJ = 125°C 1.0 25°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 NTMSD6N303R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 0.1 IR, REVERSE CURRENT (AMPS) TJ = 125°C 0.01 85°C 0.001 0.1 TJ = 125°C 0.01 0.001 25°C IR, MAXIMUM REVERSE CURRENT (AMPS) 20 25 30 0.0001 25°C 0.0001 0.00001 0.000001 0 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) 0.00001 0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current IO , AVERAGE FORWARD CURRENT (AMPS) 1000 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p dc FREQ = 20 kHz C, CAPACITANCE (pF) 100 10 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 19. Typical Capacitance Figure 20. Current Derating PFO , AVERAGE POWER DISSIPATION (WATTS) 1.75 1.50 1.25 1.00 0.75 Ipk/Io = 20 0.50 0.25 0 0 1.0 2.0 3.0 4.0 5.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = p dc SQUARE WAVE Figure 21. Forward Power Dissipation http://onsemi.com 7 NTMSD6N303R2 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.1010 W CHIP JUNCTION 39.422 mF SINGLE PULSE 1.2674 W 27.987 W 30.936 W 36.930 W 0.2292 F 2.267 F AMBIENT 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.01 493.26 mF 0.0131 F 0.001 1.0E−05 1.0E−04 1.0E−03 Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin − CO Vout − LOAD Buck Regulator LO + + Vin − CO Vout − LOAD Synchronous Buck Regulator http://onsemi.com 8 NTMSD6N303R2 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 + + Vin Q1 − CO Vout − LOAD Boost Regulator + + Vin − CO Vout − LOAD Buck−Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 + Vin − D1 CO LO Q2 D2 BATT #1 Q3 D3 BATT #2 http://onsemi.com 9 NTMSD6N303R2 TYPICAL APPLICATIONS Li−Ion BATTERY PACK APPLICATIONS Battery Pack PACK + Li−Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK − SCHOTTKY SCHOTTKY • • • • Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on. http://onsemi.com 10 NTMSD6N303R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− A 8 5 B 1 S 4 0.25 (0.010) M Y M − Y− G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8_ N 0.25 0.50 S 5.80 6.20 STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C −Z− H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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