NTMSD6N303R2G

NTMSD6N303, NVMSD6N303 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8 FETKYt http://onsemi.com The FETKY product family incorporates low RDS(on) MOSFETs packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. MOSFET 6.0 AMPERES 30 VOLTS 24 mW @ VGS = 10 V (Typ) SCHOTTKY DIODE 6.0 AMPERES 30 VOLTS 420 mV @ IF = 3.0 A Features • These Devices are Pb−Free and are RoHS Compliant • NVMSD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable A A Applications • • • • • • • S Buck Converter Buck−Boost Synchronous Rectification Low Voltage Motor Control Battery Packs Chargers Cell Phones G C C 6 D 3 D 4 5 (TOP VIEW) SO−8 CASE 751 STYLE 18 Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate−to−Source Voltage − Continuous VGS "20 Vdc Drain Current − (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp ≤ 10 ms) ID IDM 6.0 30 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2) PD 2.0 Watts Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) EAS 325 mJ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 1 C C D D E6N3x AYWW G G 1 Symbol December, 2012 − Rev. 3 7 8 8 (TJ = 25°C unless otherwise noted) (Note 1) © Semiconductor Components Industries, LLC, 2012 8 2 MARKING DIAGRAM & PIN ASSIGNMENT MOSFET MAXIMUM RATINGS Rating 1 1 A A S G E6N3 = Device Code x = Blank or S A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMSD6N303R2G SO−8 2500/Tape & Reel (Pb−Free) NTMSD6N303R2SG SO−8 2500/Tape & Reel (Pb−Free) NVMSD6N303R2G SO−8 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMSD6N303R2/D NTMSD6N303, NVMSD6N303 SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 30 Volts Average Forward Current (Note 3) (Rated VR) TA = 104°C IO 2.0 Amps Peak Repetitive Forward Current (Note 3) (Rated VR, Square Wave, 20 kHz) TA = 108°C Ifrm 4.0 Amps Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, half−wave, single phase, 60 Hz) Ifsm 30 Amps Thermal Resistance − Junction−to−Ambient (Note 4) − MOSFET RqJA 167 °C/W Thermal Resistance − Junction−to−Ambient (Note 5) − MOSFET RqJA 97 Thermal Resistance − Junction−to−Ambient (Note 3) − MOSFET RqJA 62.5 Thermal Resistance − Junction−to−Ambient (Note 4) − Schottky RqJA 197 Thermal Resistance − Junction−to−Ambient (Note 5) − Schottky RqJA 97 Thermal Resistance − Junction−to−Ambient (Note 3) − Schottky RqJA 62.5 TJ, Tstg −55 to +150 Rating THERMAL CHARACTERISTICS − SCHOTTKY AND MOSFET Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State. SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristics Symbol VF Maximum Instantaneous Forward Voltage (Note 6) IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (Note 6) VR = 30 V Maximum Voltage Rate of Change VR = 30 V 6. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 IR dV/dt Value Unit TJ = 25°C TJ = 125°C 0.28 0.42 0.50 0.13 0.33 0.45 TJ = 25°C TJ = 125°C 250 − − 25 10,000 Volts mA mA V/ms NTMSD6N303, NVMSD6N303 MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 30 − − 30 − − − − − − 1.0 20 − − 100 1.0 − 1.8 4.6 2.5 − − − 0.024 0.030 0.032 0.040 − 10 − Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 7) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 6 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS Vdc mV/°C W Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Ciss − 680 950 Coss − 210 300 Crss − 70 135 td(on) − 9 18 tr − 22 40 td(off) − 45 80 tf − 45 80 td(on) − 13 30 tr − 27 50 td(off) − 22 40 pF SWITCHING CHARACTERISTICS (Notes 7 & 8) Turn−On Delay Time (VDD = 15 Vdc, ID = 1 A, VGS = 10 V, RG = 6 W) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = 15 Vdc, ID = 1 A, VGS = 4.5 V, RG = 6 W) Rise Time Turn−Off Delay Time Fall Time Gate Charge (VDS = 15 Vdc, VGS = 10 Vdc, ID = 5 A) ns ns tf − 34 70 QT − 19 30 Q1 − 2.4 − Q2 − 5.0 − Q3 − 4.3 − VSD − − 0.75 0.62 1.0 − Vdc trr − 26 − ns ta − 11 − tb − 15 − QRR − 0.015 − nC BODY−DRAIN DIODE RATINGS (Note 7) Diode Forward On−Voltage (IS = 1.7 Adc, VGS = 0 V) (IS = 1.7 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 5 A, VGS = 0 V, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge (IS = 5 A, dIS/dt = 100 A/ms, VGS = 0 V) 7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 mC NTMSD6N303, NVMSD6N303 TYPICAL MOSFET ELECTRICAL CHARACTERISTICS 12 TJ = 25°C 3.6 V 4V 3.8 V ID, DRAIN CURRENT (AMPS) 10 3.2 V 8 6 3V 4 2.8 V 2 VGS = 2.6 V 0 0.2 0.05 0.4 0.6 0.8 1 1.2 1.4 2 1.8 1.6 2 TJ = 125°C TJ = −55°C 0 1 2 4 3 5 Figure 2. Transfer Characteristics T = 125°C 0.03 0.025 T = 25°C 0.02 T = −55°C 0.015 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 4 Figure 1. On−Region Characteristics 0.035 1 6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.04 0.01 8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS = 10 0.045 VDS ≥ 10 V 10 0 2 3 4 5 6 7 8 9 10 11 12 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.4 V 10 V 6V 0.05 TJ = 25°C 0.045 0.04 0.035 VGS = 4.5 V 0.03 0.025 0.02 VGS = 10 V 0.015 0.01 1 2 4 3 5 7 6 8 9 10 11 12 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 10,000 1.8 1.6 VGS = 0 V ID = 3 A VGS = 10 V IDSS, LEAKAGE (nA) ID, DRAIN CURRENT (AMPS) 12 1.4 1.2 1 TJ = 150°C 1000 TJ = 125°C 100 0.8 0.6 −50 −25 0 25 50 75 100 125 10 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 30 1400 C, CAPACITANCE (pF) 10 Ciss TJ = 25°C 1200 1000 Crss 800 Ciss 600 400 Coss 200 Crss 0 VDS = 0 V 10 5 VGS = 0 V 0 5 10 15 20 VGS VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 25 8 VGS 6 Q1 4 10 Q3 0 4 td(off) tf 10 td(on) 1 10 14 16 18 20 0 2 1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1.0 0.7 0.8 0.9 Figure 10. Diode Forward Voltage versus Current Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 1.0 ms 10 10 s max. 10 ms VGS = 12 V SINGLE PULSE TC = 25°C 0.6 0.5 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) 12 3 0 100 100 0.1 10 4 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.01 8 VGS = 0 V TJ = 25°C 5 RG, GATE RESISTANCE (W) 0.1 6 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge IS, SOURCE CURRENT (AMPS) t, TIME (ns) 2 Qg, TOTAL GATE CHARGE (nC) tr 1 ID = 6 A TJ = 25°C 6 VDD = 15 V ID = 6 A VGS = 10 V 100 1 Q2 2 0 20 VDS Figure 7. Capacitance Variation 1000 30 QT VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1600 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTMSD6N303, NVMSD6N303 325 300 275 250 225 200 175 150 125 100 75 50 25 0 ID = 6 A 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 NTMSD6N303, NVMSD6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.1 0.2 0.1 0.05 0.02 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 0.01 CHIP JUNCTION 0.01 0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F SINGLE PULSE AMBIENT 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 100 10 1000 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 10 85°C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 25°C -40°C TJ = 125°C 1.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 85°C TJ = 125°C 25°C 1.0 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 0.8 NTMSD6N303, NVMSD6N303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 0.1 TJ = 125°C 0.01 85°C 0.001 0.0001 25°C 0.00001 0.000001 0.1 TJ = 125°C 0.01 0.001 25°C 0.0001 0.00001 0.000001 0 5.0 10 15 20 25 30 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) 10 15 25 20 dc 4.5 FREQ = 20 kHz 4.0 3.5 SQUARE WAVE 3.0 Ipk/Io = p 2.5 Ipk/Io = 5.0 2.0 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 0 30 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 19. Typical Capacitance Figure 20. Current Derating 1.75 dc 1.50 SQUARE WAVE Ipk/Io = p 1.25 Ipk/Io = 5.0 1.00 Ipk/Io = 10 0.75 Ipk/Io = 20 0.50 0.25 0 0 30 5.0 VR, REVERSE VOLTAGE (VOLTS) PFO , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 100 10 25 Figure 18. Maximum Reverse Current 1000 5.0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current 0 15 10 1.0 2.0 3.0 4.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation http://onsemi.com 7 5.0 140 160 NTMSD6N303, NVMSD6N303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.1010 W CHIP JUNCTION 39.422 mF 0.01 0.01 1.2674 W 27.987 W 30.936 W 36.930 W 493.26 mF 0.0131 F 0.2292 F 2.267 F SINGLE PULSE AMBIENT 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin CO - Vout LOAD - Buck Regulator LO + + Vin CO - Vout - Synchronous Buck Regulator http://onsemi.com 8 LOAD 1.0E+03 NTMSD6N303, NVMSD6N303 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 + + Vin CO Vout LOAD Q1 - - Boost Regulator + + Vin CO - Vout LOAD - Buck−Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 Q2 LO D2 BATT #1 + Vin D1 CO - Q3 D3 BATT #2 http://onsemi.com 9 NTMSD6N303, NVMSD6N303 TYPICAL APPLICATIONS Li−Ion BATTERY PACK APPLICATIONS Battery Pack PACK + Li-Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK - SCHOTTKY SCHOTTKY • Applicable in battery packs which require a high current level. • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. • Under normal operation, both transistors are on. FETKY is a trademark of International Rectifier Corporation. http://onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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