NTNS2K1P021ZTCG

MOSFET - Power, Single P-Channel, Small Signal -20 V, -127 mA NTNS2K1P021Z Features www.onsemi.com • Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm) for Extremely Space−Constrained Applications • −1.5 V Gate Drive • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX 5.0 W @ −4.5 V −20 V Applications 20 W @ −1.2 V P−CHANNEL MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V ID −127 mA Parameter Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −91 t≤5s TA = 25°C −146 Steady State TA = 25°C PD t≤5s Pulsed Drain Current −127 mA 7.0 W @ −1.8 V • Small Signal Load Switch • High Speed Interfacing • Level Shift Continuous Drain Current (Note 1) ID Max mW 125 −488 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 200 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range S (2) 166 IDM tp = 10 ms G (1) MARKING DIAGRAM FM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% XDFN3 CASE 711BH F M 1 = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTNS2K1P021ZTCG XDFN3 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2019 January, 2021 − Rev. 1 1 Publication Order Number: NTNS2K1P021Z/D NTNS2K1P021Z THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 998 Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 751 Unit °C/W 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −5 V TJ = 25°C −50 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −16 V TJ = 25°C −100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±100 nA VGS(TH) VGS = VDS, ID = −250 mA −1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Drain−to−Source On Resistance RDS(on) −0.4 VGS = −4.5 V, ID = −100 mA 2.1 5.0 VGS = −1.8 V, ID = −20 mA 3.6 7.0 VGS= −1.2 V, ID = −10 mA 7.3 20 Forward Transconductance gFS VDS = −5 V, ID = −125 mA 0.35 Source−Drain Diode Voltage VSD VGS = 0 V, IS = −10 mA −0.6 W S −1.0 V CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 12.8 VGS = 0 V, freq = 1 MHz, VDS = −15 V 2.8 pF 2.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 37 VGS = −4.5 V, VDD = −15 V, ID = 200 mA, RG = 2 W tf 71 280 171 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns NTNS2K1P021Z TYPICAL CHARACTERISTICS 0.25 VGS = −2 V to −5 V VDS = −5 V −1.8 V 0.20 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 0.25 −1.6 V 0.15 −1.4 V 0.10 −1.2 V 0.05 0.20 0.15 0.10 TJ = 25°C 0.05 TJ = −55°C 0 1 2 3 4 0 5 1.5 2.0 Figure 2. Transfer Characteristics 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.0 TJ = 25°C VGS = −1.5 V 4.5 4.0 VGS = −1.8 V 3.5 3.0 VGS = −3.3 V VGS = −2.5 V 2.5 VGS = −4.5 V 2.0 1.5 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.6 1.5 1.4 VGS = −4.5 V ID = −0.1 A −IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics TJ = 25°C ID = −0.12 A 1.0 0.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) 5.0 1.0 0 TJ = 125°C −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 TJ = 150°C TJ = 125°C 100 TJ = 85°C 10 1 0.1 0.01 TJ = 25°C 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 20 NTNS2K1P021Z TYPICAL CHARACTERISTICS 1000 VGS = 0 V TJ = 25°C f = 1 MHz t, TIME (ns) CISS 10 COSS tf 100 tr td(on) CRSS 1 0 5 10 15 10 20 Figure 8. Resistive Switching Time Variation vs. Gate Resistance 1 0.008 TJ = 125°C 0.005 TJ = 25°C 0.004 0.003 RqWJA(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 0.002 TJ = −55°C 0.3 1000 100 Figure 7. Capacitance Variation 0.009 0.006 10 RG, GATE RESISTANCE (W) VGS = 0 V 0.007 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.010 −IS, SOURCE CURRENT (A) VGS = −4.5 V VDS = −15 V ID = −0.2 A td(off) −ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS ≤ −4.5 V Single Pulse TC = 25°C 10 ms 0.1 100 ms 1 ms 10 ms 0.01 0.001 dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area Duty Cycle = 0.5 0.2 100 0.1 0.05 0.02 10 0.01 Single Pulse 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 11. Thermal Response www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN3 0.42x0.62, 0.3P CASE 711BH ISSUE A DATE 29 APR 2018 SCALE 8:1 GENERIC MARKING DIAGRAM* XM X M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON64946G XDFN3 0.42x0.62, 0.3P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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