NTNS3A91PZT5G

NTNS3A91PZ MOSFET – Single, P-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 mm -20 V, -223 mA http://onsemi.com MOSFET Features • • • • • V(BR)DSS Single P−Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.5 V Gate Voltage Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant RDS(on) MAX 1.6 W @ −4.5 V 2.4 W @ −2.5 V −20 V −223 mA 3.3 W @ −1.8 V 4.5 W @ −1.5 V P−Channel MOSFET D (3) Applications • • • • ID MAX Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products G (1) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V ID −223 mA Parameter Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C −161 t≤5s TA = 25°C −240 Steady State TA = 25°C t≤5s TA = 25°C S (2) MARKING DIAGRAM 3 XLLGA3 CASE 713AB 2 1 1 DM mW D = Specific Device Code M = Date Code −669 mA ORDERING INFORMATION TJ, TSTG -55 to 150 °C Source Current (Body Diode) IS −121 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Power Dissipation (Note 1) Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature PD 121 IDM 140 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Device Package Shipping† NTNS3A91PZT5G XLLGA3 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 1035 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 895 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. © Semiconductor Components Industries, LLC, 2012 June, 2019 − Rev. 1 1 Publication Order Number: NTNS3A91PZ/D NTNS3A91PZ 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min −20 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −20 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA V 11 TJ = 25°C mV/°C −1.0 mA ±2.0 mA −1.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ −0.4 2.1 RDS(on) mV/°C VGS = −4.5 V, ID = −100 mA 1.1 1.6 VGS = −2.5 V, ID = −50 mA 1.5 2.4 VGS = −1.8 V, ID = −20 mA 2.0 3.3 4.5 VGS = −1.5 V, ID = −10 mA 2.5 Forward Transconductance gFS VDS = −5 V, ID = −100 mA 0.41 Source−Drain Diode Voltage VSD VGS = 0 V, IS = −10 mA −0.6 W S −1.0 V CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 41 VGS = 0 V, f = 10 kHz, VDS = −15 V 4.6 4.1 Total Gate Charge QG(TOT) 1.1 Threshold Gate Charge QG(TH) 0.1 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = −4.5 V, VDS = −15 V, ID = −200 mA pF nC 0.2 0.23 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 41 VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2 W tf 97 571 286 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTNS3A91PZ TYPICAL CHARACTERISTICS VGS = −4.5 V 0.9 −2.5 V −4.0 V 0.8 −3.5 V 0.7 0.6 −2.0 V 0.5 −1.8 V 0.4 0.3 −1.5 V 0.2 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.0 −3.0 V −1.2 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.7 0.5 0.4 0.3 0.2 0 0.5 1.0 1.5 2.0 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = −0.1 A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 −VGS, GATE VOLTAGE (V) 5.0 VGS = −1.5 V 4.5 4.0 VGS = −1.8 V 3.0 2.5 VGS = −2.5 V 2.0 1.5 VGS = −4.5 V 1.0 0.5 0 0 0.1 0.2 0.3 −IDSS, LEAKAGE (nA) VGS = −4.5 V ID = −100 mA 1.3 1.2 VGS = −1.8 V ID = −20 mA 1.1 0.5 0.6 0.7 0.8 0.9 1.0 −ID, DRAIN CURRENT (A) 1000 1.4 0.4 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.5 3.0 TJ = 25°C 3.5 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE TJ = 125°C 0.6 −VGS, GATE−TO−SOURCE VOLTAGE (V) 4.5 1.0 TJ = 25°C −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5.0 0.5 TJ = −55°C VDS = −5 V 0.8 0.1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 0.9 −ID, DRAIN CURRENT (A) 1.0 1.0 0.9 TJ = 125°C 100 TJ = 85°C 10 0.8 0.7 −50 1 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNS3A91PZ VGS = 0 V TJ = 25°C f = 10 kHz C, CAPACITANCE (pF) 70 60 Ciss 50 40 30 20 10 0 2 Coss 4 6 8 10 12 14 16 18 20 12 3 9 QGS 2 QGD 0 6 VDS = −15 V TJ = 25°C ID = −0.2 A 1 0 3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 td(off) tr 100 td(on) VGS = −4.5 V VDD = −15 V ID = −0.2 A 1 10 TJ = 125°C TJ = 25°C 1 TJ = −55°C 0.1 0.01 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.85 1 10 ms 0.75 −ID, DRAIN CURRENT (A) t, TIME (ns) VGS VDS QG, TOTAL GATE CHARGE (nC) tf −VGS(th), GATE−TO−SOURCE THRESHOLD VOLTAGE (V) 15 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 18 QT 4 −IS, SOURCE CURRENT (A) 0 Crss 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 80 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS ID = −250 mA 0.65 0.55 0.45 0.35 −50 −25 0 25 50 75 100 125 150 100 ms 0.1 1 ms VGS ≤ −8 V Single Pulse TC = 25°C 10 ms 0.01 0.001 RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 TJ, TEMPERATURE JUNCTION (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTNS3A91PZ R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) TYPICAL CHARACTERISTICS 1200 1100 1000 RqJA Steady State = 1035°C/W 900 800 700 600 Duty Cycle = 0.5 500 400 300 200 100 0 0.05 0.02 0.01 0.20 0.10 Single Pulse 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 t, TIME (s) Figure 13. FET Thermal Response MINIMUM RECOMMENDED SOLDER FOOTPRINT* 2X 0.20 0.60 1 3 2X 0.20 2 0.28 0.62 0.35 PITCH DIMENSIONS: MILLIMETERS *Dependent upon end user capabilities, this footprint could be used as a minimum. http://onsemi.com 5 1E+02 1E+03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XLLGA3, 0.62x0.62, 0.35P CASE 713AB ISSUE O DATE 25 SEP 2012 SCALE 8:1 ÉÉ ÉÉ A B D PIN ONE REFERENCE E 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A A1 b D D2 D3 E E2 e K L L2 TOP VIEW 0.10 C A 3X 0.10 C A1 C SIDE VIEW SEATING PLANE GENERIC MARKING DIAGRAM* D3 e/2 e D2 XM E2 2 3 0.10 M b C A B 0.05 M C 1 L2 2X K 2X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.100 0.200 0.620 BSC 0.175 BSC 0.205 BSC 0.620 BSC 0.400 0.600 0.350 BSC 0.200 REF 0.090 0.210 0.110 0.310 0.10 M C A B 0.05 M C X M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 2X PACKAGE OUTLINE 0.280 0.600 1 3 2X 0.200 2 0.350 0.760 0.350 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON84074E XLLGA3, 0.62X0.62, 0.35P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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